Showing 877–888 of 3680 results
Infineon Technologies IRG4BH20K-L
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
11A |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 50 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| JESD-30 Code |
R-PSIP-T3 |
| Mounting Type |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Published |
2017 |
| Qualification Status |
Not Qualified |
| Vce(on) (Max) @ Vge, Ic |
4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
720 ns |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Power Dissipation-Max (Abs) |
24W |
| Turn On Time |
51 ns |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
22A |
| Td (on/off) @ 25°C |
23ns/93ns |
| Switching Energy |
450μJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
400ns |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BH20K-LPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1997 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Weight |
2.084002g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 50 Ω, 15V |
| Turn Off Delay Time |
93 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Dual |
| Factory Lead Time |
13 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
60W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
11A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tube |
| Power Dissipation |
60W |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
22A |
| Turn On Delay Time |
23 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
26ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
4.3V |
| Max Collector Current |
11A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
51 ns |
| Vce(on) (Max) @ Vge, Ic |
4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
720 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
23ns/93ns |
| Switching Energy |
450μJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
400ns |
| Height |
9.65mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4BH20K-S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
11A |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 50 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| JESD-609 Code |
e0 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
225 |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
MOTOR CONTROL |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
51 ns |
| Vce(on) (Max) @ Vge, Ic |
4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
720 ns |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
22A |
| Td (on/off) @ 25°C |
23ns/93ns |
| Switching Energy |
450μJ (on), 440μJ (off) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BH20K-STRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 50 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
60W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
13 Weeks |
| Vce(on) (Max) @ Vge, Ic |
4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
720 ns |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
4.3V |
| Max Collector Current |
11A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
51 ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
22A |
| Td (on/off) @ 25°C |
23ns/93ns |
| Switching Energy |
450μJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
400ns |
| Radiation Hardening |
No |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG4CC30UB
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
UPPER |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| JESD-609 Code |
e0 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
ULTRA FAST SPEED |
| Mounting Type |
Surface Mount |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
NO LEAD |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
O-XUUC-N |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 6A |
| Gate-Emitter Thr Voltage-Max |
6V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG4CC50WB
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| JESD-609 Code |
e0 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Terminal Position |
UPPER |
| Terminal Form |
NO LEAD |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
O-XUUC-N |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 10A |
| Gate-Emitter Thr Voltage-Max |
6V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG4CC80SB
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Operating Temperature |
-55°C~150°C |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG4IBC10UD
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
6.8A |
| Number of Elements |
1 |
| Test Conditions |
480V, 5A, 100 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Published |
1999 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
ULTRA FAST |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| JEDEC-95 Code |
TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
25W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
28ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
56 ns |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
345 ns |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
27A |
| Td (on/off) @ 25°C |
40ns/87ns |
| Switching Energy |
140μJ (on), 120μJ (off) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4IBC10UDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Last Time Buy |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 5A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Case Connection |
ISOLATED |
| Published |
1999 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA FAST |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
25W |
| Current Rating |
6.8A |
| Element Configuration |
Single |
| Power Dissipation |
25W |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Current - Collector Pulsed (Icm) |
27A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.6V |
| Max Collector Current |
6.8A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
56 ns |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
345 ns |
| Gate Charge |
15nC |
| Td (on/off) @ 25°C |
40ns/87ns |
| Switching Energy |
140μJ (on), 120μJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
210ns |
| Height |
16.129mm |
| Length |
10.7442mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rise Time |
16ns |
| Lead Free |
Lead Free |
Infineon Technologies IRG4IBC20FD
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 Full Pack |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
14.3A |
| Number of Elements |
1 |
| Test Conditions |
480V, 9A, 50 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
ULTRA FAST SOFT RECOVERY |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| JEDEC-95 Code |
TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
34W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
37ns |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
63 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
| Turn Off Time-Nom (toff) |
610 ns |
| Gate Charge |
27nC |
| Current - Collector Pulsed (Icm) |
64A |
| Td (on/off) @ 25°C |
43ns/240ns |
| Switching Energy |
250μJ (on), 640μJ (off) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4IBC20W
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
11.8A |
| Number of Elements |
1 |
| Test Conditions |
480V, 6.5A, 50 Ω, 15V |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 Full Pack |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
36 ns |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
34W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-220AB |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 6.5A |
| Turn Off Time-Nom (toff) |
300 ns |
| Gate Charge |
26nC |
| Current - Collector Pulsed (Icm) |
52A |
| Td (on/off) @ 25°C |
22ns/110ns |
| Switching Energy |
60μJ (on), 80μJ (off) |
| Configuration |
SINGLE |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4IBC30FDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220AB Full-Pak |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
20.3A |
| Test Conditions |
480V, 17A, 23Ohm, 15V |
| Max Power Dissipation |
45W |
| Turn Off Delay Time |
310 ns |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Reverse Recovery Time |
42 ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Turn On Delay Time |
42 ns |
| Power - Max |
45W |
| Rise Time |
26ns |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
20.3A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 17A |
| Current Rating |
20.3A |
| Gate Charge |
51nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
42ns/230ns |
| Switching Energy |
630μJ (on), 1.39mJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Power Dissipation |
45W |
| Lead Free |
Lead Free |