Transistors - IGBTs - Single

Infineon Technologies IRG4IBC30SPBF

In stock

SKU: IRG4IBC30SPBF-9
Manufacturer

Infineon Technologies

Power Dissipation

45W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 18A, 23 Ω, 15V

Turn Off Delay Time

540 ns

Packaging

Tube

Published

2004

Operating Temperature

-55°C~150°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

45W

Terminal Position

SINGLE

Current Rating

23.5A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

47A

Td (on/off) @ 25°C

22ns/540ns

Transistor Application

POWER CONTROL

Rise Time

19ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

23.5A

JEDEC-95 Code

TO-220AB

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 18A

Turn Off Time-Nom (toff)

1550 ns

Gate Charge

50nC

Input Type

Standard

Case Connection

ISOLATED

Switching Energy

260μJ (on), 3.45mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

590ns

Height

16.12mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Turn On Delay Time

22 ns

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4IBC30UDPBF

In stock

SKU: IRG4IBC30UDPBF-9
Manufacturer

Infineon Technologies

Power Dissipation

45W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Turn Off Delay Time

91 ns

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC

600V

Max Power Dissipation

45W

Current Rating

17A

Element Configuration

Single

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

50nC

Current - Collector Pulsed (Icm)

68A

Transistor Application

POWER CONTROL

Rise Time

21ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

17A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-220AB

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Input Type

Standard

Case Connection

ISOLATED

Td (on/off) @ 25°C

40ns/91ns

Switching Energy

380μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

9.02mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

40 ns

Lead Free

Lead Free

Infineon Technologies IRG4IBC30W

In stock

SKU: IRG4IBC30W-9
Manufacturer

Infineon Technologies

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

17A

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Packaging

Tube

Published

2000

Operating Temperature

-55°C~150°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

41 ns

Case Connection

ISOLATED

Input Type

Standard

Power - Max

45W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

Qualification Status

Not Qualified

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Gate Charge

51nC

Current - Collector Pulsed (Icm)

92A

Td (on/off) @ 25°C

25ns/99ns

Switching Energy

130μJ (on), 130μJ (off)

Configuration

SINGLE

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4IBC30WPBF

In stock

SKU: IRG4IBC30WPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Turn Off Delay Time

99 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

45W

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

45W

Terminal Position

SINGLE

Current Rating

17A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

51nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

17A

JEDEC-95 Code

TO-220AB

Turn On Time

41 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Current - Collector Pulsed (Icm)

92A

Td (on/off) @ 25°C

25ns/99ns

Case Connection

ISOLATED

Switching Energy

130μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

100ns

Height

14.224mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

25 ns

Lead Free

Lead Free

Infineon Technologies IRG4P254S

In stock

SKU: IRG4P254S-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

98A

Test Conditions

200V, 55A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

200W

Voltage - Collector Emitter Breakdown (Max)

250V

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 55A

Gate Charge

200nC

Current - Collector Pulsed (Icm)

196A

Td (on/off) @ 25°C

40ns/270ns

Switching Energy

380μJ (on), 3.5mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4P254SPBF

In stock

SKU: IRG4P254SPBF-9
Manufacturer

Infineon Technologies

Voltage - Rated DC

250V

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

250V

Current-Collector (Ic) (Max)

98A

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Test Conditions

200V, 55A, 5Ohm, 15V

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

Through Hole

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

250V

Vce(on) (Max) @ Vge, Ic

1.5V @ 15V, 55A

Power Dissipation

200W

Input Type

Standard

Power - Max

200W

Rise Time

44ns

Collector Emitter Voltage (VCEO)

1.5V

Max Collector Current

98A

Current Rating

98A

Max Power Dissipation

200W

Gate Charge

200nC

Current - Collector Pulsed (Icm)

196A

Td (on/off) @ 25°C

40ns/270ns

Switching Energy

380μJ (on), 3.5mJ (off)

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IRG4PC20U

In stock

SKU: IRG4PC20U-9
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

13A

Test Conditions

480V, 6.5A, 50 Ω, 15V

Packaging

Bulk

Published

2007

Part Status

Obsolete

Mounting Type

Through Hole

Power - Max

60W

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Gate Charge

27nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

21ns/86ns

Switching Energy

100μJ (on), 120μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4PC30FPBF

In stock

SKU: IRG4PC30FPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 17A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Factory Lead Time

14 Weeks

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Terminal Position

SINGLE

Current Rating

31A

Element Configuration

Dual

Power Dissipation

100W

Packaging

Bulk

Input Type

Standard

Turn Off Time-Nom (toff)

640 ns

Gate Charge

51nC

Drain to Source Voltage (Vdss)

250V

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

31A

JEDEC-95 Code

TO-247AC

Max Dual Supply Voltage

250V

Turn On Time

36 ns

Max Forward Surge Current (Ifsm)

31A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Transistor Application

POWER CONTROL

Rise Time

15ns

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/200ns

Switching Energy

230μJ (on), 1.18mJ (off)

Fall Time-Max (tf)

270ns

Height

20.2946mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC30KPBF

In stock

SKU: IRG4PC30KPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 16A, 23 Ω, 15V

Element Configuration

Single

Factory Lead Time

11 Weeks

Published

2003

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

28A

Operating Temperature

-55°C~150°C TJ

Power Dissipation

100W

Gate Charge

67nC

Current - Collector Pulsed (Icm)

58A

Transistor Application

MOTOR CONTROL

Rise Time

28ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

28A

JEDEC-95 Code

TO-247AC

Turn On Time

54 ns

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Turn Off Time-Nom (toff)

380 ns

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

26ns/130ns

Switching Energy

360μJ (on), 510μJ (off)

Gate-Emitter Voltage-Max

20V

Height

20.2946mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC30SPBF

In stock

SKU: IRG4PC30SPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 18A, 23 Ω, 15V

Power Dissipation

100W

Factory Lead Time

14 Weeks

Published

2003

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Terminal Position

SINGLE

Current Rating

34A

Element Configuration

Dual

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

68A

Td (on/off) @ 25°C

22ns/540ns

Rise Time

19ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

34A

JEDEC-95 Code

TO-247AC

Turn On Time

40 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 18A

Turn Off Time-Nom (toff)

1550 ns

Gate Charge

50nC

Input Type

Standard

Transistor Application

POWER CONTROL

Switching Energy

260μJ (on), 3.45mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

590ns

Height

20.2946mm

Length

15.875mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC30UDPBF

In stock

SKU: IRG4PC30UDPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Turn Off Delay Time

91 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

100W

Factory Lead Time

14 Weeks

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

23A

Element Configuration

Single

Packaging

Tube

Case Connection

COLLECTOR

Gate Charge

50nC

Current - Collector Pulsed (Icm)

92A

Transistor Application

POWER CONTROL

Rise Time

21ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

23A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

300 ns

Input Type

Standard

Turn On Delay Time

40 ns

Td (on/off) @ 25°C

40ns/91ns

Switching Energy

380μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC30UPBF

In stock

SKU: IRG4PC30UPBF-9
Manufacturer

Infineon Technologies

Case Connection

COLLECTOR

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2000

Part Status

Last Time Buy

Packaging

Bulk

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

23A

Element Configuration

Single

Power Dissipation

100W

Mount

Through Hole

Factory Lead Time

14 Weeks

Td (on/off) @ 25°C

17ns/78ns

Switching Energy

160μJ (on), 200μJ (off)

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

23A

JEDEC-95 Code

TO-247AC

Turn On Time

33 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

320 ns

Gate Charge

50nC

Current - Collector Pulsed (Icm)

92A

Transistor Application

POWER CONTROL

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

150ns

Height

20.2946mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

9.6ns

Lead Free

Contains Lead, Lead Free