Transistors - IGBTs - Single

Infineon Technologies IRG4PC50FDPBF

In stock

SKU: IRG4PC50FDPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 39A, 5 Ω, 15V

Turn Off Delay Time

240 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

200W

Packaging

Tray

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

70A

Element Configuration

Single

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn Off Time-Nom (toff)

660 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

25ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

70A

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AC

Turn On Time

86 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 39A

Gate Charge

190nC

Current - Collector Pulsed (Icm)

280A

Case Connection

COLLECTOR

Td (on/off) @ 25°C

55ns/240ns

Switching Energy

1.5mJ (on), 2.4mJ (off)

Fall Time-Max (tf)

210ns

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

55 ns

Lead Free

Lead Free

Infineon Technologies IRG4PC50FPBF

In stock

SKU: IRG4PC50FPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 39A, 5 Ω, 15V

Turn Off Delay Time

240 ns

Power Dissipation

200W

Factory Lead Time

14 Weeks

Published

2000

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

70A

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

280A

Td (on/off) @ 25°C

31ns/240ns

Rise Time

25ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

70A

JEDEC-95 Code

TO-247AC

Turn On Time

52 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 39A

Turn Off Time-Nom (toff)

620 ns

Gate Charge

190nC

Input Type

Standard

Turn On Delay Time

31 ns

Switching Energy

370μJ (on), 2.1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

190ns

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC50SDPBF

In stock

SKU: IRG4PC50SDPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 41A, 5 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

52 Weeks

Packaging

Tube

Published

2004

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

200W

Peak Reflow Temperature (Cel)

250

Turn Off Delay Time

980 ns

JESD-30 Code

R-PSFM-T3

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AC

Power Dissipation

200W

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

33 ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.36V

Max Collector Current

70A

Qualification Status

Not Qualified

Element Configuration

Single

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.36V @ 15V, 41A

Turn Off Time-Nom (toff)

1700 ns

Gate Charge

180nC

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

33ns/650ns

Switching Energy

720μJ (on), 8.27mJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC50SPBF

In stock

SKU: IRG4PC50SPBF-9
Manufacturer

Infineon Technologies

Element Configuration

Dual

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 41A, 5 Ω, 15V

Turn Off Delay Time

650 ns

Operating Temperature

-55°C~150°C TJ

Published

2000

JESD-609 Code

e3

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

200W

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

250

Current Rating

70A

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Factory Lead Time

14 Weeks

Current - Collector Pulsed (Icm)

140A

Td (on/off) @ 25°C

33ns/650ns

Turn On Delay Time

33 ns

Rise Time

30ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.36V

Max Collector Current

70A

JEDEC-95 Code

TO-247AC

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.36V @ 15V, 41A

Turn Off Time-Nom (toff)

1700 ns

Gate Charge

180nC

Case Connection

COLLECTOR

Power Dissipation

200W

Switching Energy

720μJ (on), 8.27mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

600ns

Height

20.2946mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

Infineon Technologies IRG4PC50UD-EPBF

In stock

SKU: IRG4PC50UD-EPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Collector-Emitter Breakdown Voltage

600V

Current Rating

55A

Factory Lead Time

14 Weeks

Packaging

Bulk

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

Through Hole

Voltage - Rated DC

600V

Max Power Dissipation

200W

Test Conditions

480V, 27A, 5 Ω, 15V

Element Configuration

Single

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

46ns/140ns

Rise Time

25ns

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

55A

Reverse Recovery Time

50 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 27A

Gate Charge

180nC

Power Dissipation

200W

Input Type

Standard

Switching Energy

990μJ (on), 590μJ (off)

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC50UD-MP

In stock

SKU: IRG4PC50UD-MP-9
Manufacturer

Infineon Technologies

Factory Lead Time

20 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

55A

Packaging

Bulk

Published

2000

Series

HEXFRED®

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

200W

Element Configuration

Single

Input Type

Standard

Power - Max

200W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

55A

Reverse Recovery Time

75 ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 27A

Gate Charge

270nC

Current - Collector Pulsed (Icm)

220A

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRG4PC50UDPBF

In stock

SKU: IRG4PC50UDPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 27A, 5 Ω, 15V

Turn Off Delay Time

140 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Factory Lead Time

14 Weeks

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

55A

Element Configuration

Single

Power Dissipation

200W

Packaging

Tube

Input Type

Standard

Turn Off Time-Nom (toff)

370 ns

Gate Charge

180nC

Rise Time

25ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

55A

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AC

Input Capacitance

4nF

Turn On Time

71 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 27A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

55A

Turn On Delay Time

46 ns

Transistor Application

POWER CONTROL

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

46ns/140ns

Switching Energy

990μJ (on), 590μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

24.99mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4PC50UPBF

In stock

SKU: IRG4PC50UPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 27A, 5 Ω, 15V

Turn Off Delay Time

170 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

200W

Current Rating

55A

Element Configuration

Single

Power Dissipation

200W

Mount

Through Hole

Factory Lead Time

14 Weeks

Gate Charge

180nC

Turn On Delay Time

32 ns

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

55A

JEDEC-95 Code

TO-247AC

Input Capacitance

4nF

Turn On Time

54 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 27A

Turn Off Time-Nom (toff)

350 ns

Current - Collector Pulsed (Icm)

220A

Td (on/off) @ 25°C

32ns/170ns

Input Type

Standard

Switching Energy

120μJ (on), 540μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

POWER CONTROL

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4PC50WPBF

In stock

SKU: IRG4PC50WPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 27A, 5 Ω, 15V

Turn Off Delay Time

120 ns

Element Configuration

Dual

Factory Lead Time

14 Weeks

Published

2000

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

200W

Terminal Position

SINGLE

Current Rating

55A

Operating Temperature

-55°C~150°C TJ

Power Dissipation

200W

Gate Charge

180nC

Current - Collector Pulsed (Icm)

220A

Turn On Delay Time

46 ns

Transistor Application

POWER CONTROL

Rise Time

33ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

55A

JEDEC-95 Code

TO-247AC

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 27A

Turn Off Time-Nom (toff)

272 ns

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

46ns/120ns

Switching Energy

80μJ (on), 320μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

86ns

Height

20.2946mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PC60U-PPBF

In stock

SKU: IRG4PC60U-PPBF-9
Manufacturer

Infineon Technologies

Voltage - Rated DC

600V

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 40A, 5Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Current-Collector (Ic) (Max)

75A

Packaging

Bulk

Published

2000

Part Status

Discontinued

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Through Hole

Factory Lead Time

26 Weeks

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Power Dissipation

520W

Input Type

Standard

Power - Max

520W

Rise Time

42ns

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

75A

Current Rating

75A

Max Power Dissipation

520W

Gate Charge

310nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

39ns/200ns

Switching Energy

280μJ (on), 1.1mJ (off)

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IRG4PC60UPBF

In stock

SKU: IRG4PC60UPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 40A, 5 Ω, 15V

Turn Off Delay Time

200 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

520W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

75A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Qualification Status

Not Qualified

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn Off Time-Nom (toff)

460 ns

Case Connection

COLLECTOR

Turn On Delay Time

39 ns

Transistor Application

POWER CONTROL

Rise Time

42ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

75A

JEDEC-95 Code

TO-247AC

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Gate Charge

310nC

Current - Collector Pulsed (Icm)

300A

Power Dissipation

520W

Td (on/off) @ 25°C

39ns/200ns

Switching Energy

280μJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.701mm

Length

15.875mm

Width

5.3086mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

Infineon Technologies IRG4PF50WD-201P

In stock

SKU: IRG4PF50WD-201P-9
Manufacturer

Infineon Technologies

Max Operating Temperature

150°C

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

900V

Current-Collector (Ic) (Max)

51A

Test Conditions

720V, 28A, 5Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Max Power Dissipation

200W

Min Operating Temperature

-55°C

Element Configuration

Single

Input Type

Standard

Power - Max

200W

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

51A

Reverse Recovery Time

90 ns

Voltage - Collector Emitter Breakdown (Max)

900V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 28A

Gate Charge

160nC

Current - Collector Pulsed (Icm)

204A

Td (on/off) @ 25°C

50ns/110ns

Switching Energy

2.63mJ (on), 1.34mJ (off)

RoHS Status

RoHS Compliant