Showing 937–948 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRG4PH50KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
COLLECTOR |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
140 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Last Time Buy |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Gate Charge |
180nC |
Current - Collector Pulsed (Icm) |
90A |
Rise Time |
100ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.5V |
Max Collector Current |
45A |
Reverse Recovery Time |
90 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
139 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 24A |
Turn Off Time-Nom (toff) |
700 ns |
Turn On Delay Time |
87 ns |
Input Type |
Standard |
Td (on/off) @ 25°C |
87ns/140ns |
Switching Energy |
3.83mJ (on), 1.9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
MOTOR CONTROL |
Lead Free |
Lead Free |
Infineon Technologies IRG4PH50KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Last Time Buy |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 24A, 5 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Bulk |
Case Connection |
COLLECTOR |
Published |
2000 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
90A |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.5V |
Max Collector Current |
45A |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
64 ns |
Vce(on) (Max) @ Vge, Ic |
3.5V @ 15V, 24A |
Turn Off Time-Nom (toff) |
660 ns |
Gate Charge |
180nC |
Td (on/off) @ 25°C |
36ns/200ns |
Switching Energy |
1.21mJ (on), 2.25mJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
190ns |
Height |
20.701mm |
Length |
15.875mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rise Time |
29ns |
Lead Free |
Lead Free |
Infineon Technologies IRG4PH50S-EPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 33A, 5 Ω, 15V |
Power Dissipation |
200W |
Factory Lead Time |
14 Weeks |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Element Configuration |
Dual |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Gate Charge |
167nC |
Current - Collector Pulsed (Icm) |
114A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.7V |
Max Collector Current |
57A |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
Turn Off Time-Nom (toff) |
2170 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
32ns/845ns |
Switching Energy |
1.8mJ (on), 19.6mJ (off) |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4PH50SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 33A, 5 Ω, 15V |
Turn Off Delay Time |
845 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
57A |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
COLLECTOR |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Max Junction Temperature (Tj) |
150°C |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
57A |
Continuous Drain Current (ID) |
57A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.6nF |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
Continuous Collector Current |
57A |
Turn Off Time-Nom (toff) |
2170 ns |
Turn On Delay Time |
32 ns |
Gate Charge |
167nC |
Current - Collector Pulsed (Icm) |
114A |
Td (on/off) @ 25°C |
32ns/845ns |
Switching Energy |
1.8mJ (on), 19.6mJ (off) |
Height |
24.99mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rise Time |
29ns |
Lead Free |
Lead Free |
Infineon Technologies IRG4PH50UDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
800V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
14 Weeks |
JESD-609 Code |
e3 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Packaging |
Bulk |
Power Dissipation |
200W |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
Turn Off Time-Nom (toff) |
570 ns |
Turn On Delay Time |
47 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
24ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.7V |
Max Collector Current |
45A |
Reverse Recovery Time |
90 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
73 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
47ns/110ns |
Switching Energy |
2.1mJ (on), 1.5mJ (off) |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4PH50UPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
COLLECTOR |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 24A, 5 Ω, 15V |
Turn Off Delay Time |
200 ns |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Last Time Buy |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
35ns/200ns |
Rise Time |
15ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
3.7V |
Max Collector Current |
45A |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
49 ns |
Vce(on) (Max) @ Vge, Ic |
3.7V @ 15V, 24A |
Turn Off Time-Nom (toff) |
600 ns |
Gate Charge |
160nC |
Turn On Delay Time |
35 ns |
Input Type |
Standard |
Switching Energy |
530μJ (on), 1.41mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
500ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
Infineon Technologies IRG4PSC71K
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
85A |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Packaging |
Bulk |
Published |
2005 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Package / Case |
TO-274AA |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
93 ns |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
350W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JESD-30 Code |
R-PSIP-T3 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
Turn Off Time-Nom (toff) |
533 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
34ns/54ns |
Switching Energy |
790μJ (on), 1.98mJ (off) |
Qualification Status |
Not Qualified |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4PSC71KD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Package / Case |
TO-274AA |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
85A |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
1999 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reverse Recovery Time |
82ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
350W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Turn On Time |
191 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
Turn Off Time-Nom (toff) |
517 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
82ns/282ns |
Switching Energy |
3.95mJ (on), 2.33mJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4PSC71KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
282 ns |
Current Rating |
85A |
Factory Lead Time |
13 Weeks |
Published |
1998 |
JESD-609 Code |
e3 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
Turn Off Time-Nom (toff) |
517 ns |
Input Type |
Standard |
Turn On Delay Time |
82 ns |
Transistor Application |
MOTOR CONTROL |
Rise Time |
107ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
191 ns |
Power Dissipation |
350W |
Case Connection |
COLLECTOR |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
82ns/282ns |
Switching Energy |
3.95mJ (on), 2.33mJ (off) |
Height |
20.8mm |
Length |
16.0782mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4PSC71UDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4PSC71UPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
56 ns |
Element Configuration |
Single |
Factory Lead Time |
22 Weeks |
Published |
1999 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
350W |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Turn On Delay Time |
34 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
50ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
85A |
Turn On Time |
79 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Turn Off Time-Nom (toff) |
304 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
34ns/56ns |
Switching Energy |
420μJ (on), 1.99mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
20.8mm |
Length |
16.0782mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4PSH71U
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Package / Case |
TO-274AA |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
99A |
Number of Elements |
1 |
Test Conditions |
960V, 70A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST SWITCHING |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
121 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
350W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JESD-30 Code |
R-PSIP-T3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 70A |
Turn Off Time-Nom (toff) |
810 ns |
Gate Charge |
370nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
51ns/280ns |
Switching Energy |
4.77mJ (on), 9.54mJ (off) |
RoHS Status |
Non-RoHS Compliant |