Transistors - IGBTs - Single

Infineon Technologies IRG4PH50KDPBF

In stock

SKU: IRG4PH50KDPBF-9
Manufacturer

Infineon Technologies

Case Connection

COLLECTOR

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 24A, 5 Ω, 15V

Turn Off Delay Time

140 ns

Operating Temperature

-55°C~150°C TJ

Published

2000

Part Status

Last Time Buy

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

45A

Element Configuration

Single

Power Dissipation

200W

Mount

Through Hole

Factory Lead Time

14 Weeks

Gate Charge

180nC

Current - Collector Pulsed (Icm)

90A

Rise Time

100ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

45A

Reverse Recovery Time

90 ns

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

139 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 24A

Turn Off Time-Nom (toff)

700 ns

Turn On Delay Time

87 ns

Input Type

Standard

Td (on/off) @ 25°C

87ns/140ns

Switching Energy

3.83mJ (on), 1.9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

MOTOR CONTROL

Lead Free

Lead Free

Infineon Technologies IRG4PH50KPBF

In stock

SKU: IRG4PH50KPBF-9
Manufacturer

Infineon Technologies

Part Status

Last Time Buy

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 24A, 5 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Case Connection

COLLECTOR

Published

2000

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

45A

Element Configuration

Single

Power Dissipation

200W

Mount

Through Hole

Factory Lead Time

14 Weeks

Current - Collector Pulsed (Icm)

90A

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.5V

Max Collector Current

45A

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

3.5V @ 15V, 24A

Turn Off Time-Nom (toff)

660 ns

Gate Charge

180nC

Td (on/off) @ 25°C

36ns/200ns

Switching Energy

1.21mJ (on), 2.25mJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

190ns

Height

20.701mm

Length

15.875mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

29ns

Lead Free

Lead Free

Infineon Technologies IRG4PH50S-EPBF

In stock

SKU: IRG4PH50S-EPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 33A, 5 Ω, 15V

Power Dissipation

200W

Factory Lead Time

14 Weeks

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

200W

Terminal Position

SINGLE

Element Configuration

Dual

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Gate Charge

167nC

Current - Collector Pulsed (Icm)

114A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7V

Max Collector Current

57A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 33A

Turn Off Time-Nom (toff)

2170 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

32ns/845ns

Switching Energy

1.8mJ (on), 19.6mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PH50SPBF

In stock

SKU: IRG4PH50SPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 33A, 5 Ω, 15V

Turn Off Delay Time

845 ns

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Packaging

Bulk

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

57A

Element Configuration

Single

Power Dissipation

200W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Max Junction Temperature (Tj)

150°C

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

57A

Continuous Drain Current (ID)

57A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Voltage - Collector Emitter Breakdown (Max)

1200V

Input Capacitance

3.6nF

Turn On Time

62 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 33A

Continuous Collector Current

57A

Turn Off Time-Nom (toff)

2170 ns

Turn On Delay Time

32 ns

Gate Charge

167nC

Current - Collector Pulsed (Icm)

114A

Td (on/off) @ 25°C

32ns/845ns

Switching Energy

1.8mJ (on), 19.6mJ (off)

Height

24.99mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

29ns

Lead Free

Lead Free

Infineon Technologies IRG4PH50UDPBF

In stock

SKU: IRG4PH50UDPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 24A, 5 Ω, 15V

Turn Off Delay Time

110 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Factory Lead Time

14 Weeks

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

45A

Packaging

Bulk

Power Dissipation

200W

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 24A

Turn Off Time-Nom (toff)

570 ns

Turn On Delay Time

47 ns

Transistor Application

POWER CONTROL

Rise Time

24ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.7V

Max Collector Current

45A

Reverse Recovery Time

90 ns

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

73 ns

Case Connection

COLLECTOR

Input Type

Standard

Gate Charge

160nC

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

47ns/110ns

Switching Energy

2.1mJ (on), 1.5mJ (off)

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4PH50UPBF

In stock

SKU: IRG4PH50UPBF-9
Manufacturer

Infineon Technologies

Case Connection

COLLECTOR

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 24A, 5 Ω, 15V

Turn Off Delay Time

200 ns

Operating Temperature

-55°C~150°C TJ

Published

2000

Part Status

Last Time Buy

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

1.2kV

Max Power Dissipation

200W

Current Rating

45A

Element Configuration

Single

Power Dissipation

200W

Mount

Through Hole

Factory Lead Time

14 Weeks

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

35ns/200ns

Rise Time

15ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

3.7V

Max Collector Current

45A

JEDEC-95 Code

TO-247AC

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

49 ns

Vce(on) (Max) @ Vge, Ic

3.7V @ 15V, 24A

Turn Off Time-Nom (toff)

600 ns

Gate Charge

160nC

Turn On Delay Time

35 ns

Input Type

Standard

Switching Energy

530μJ (on), 1.41mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

500ns

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

Infineon Technologies IRG4PSC71K

In stock

SKU: IRG4PSC71K-9
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

85A

Number of Elements

1

Test Conditions

480V, 60A, 5 Ω, 15V

Packaging

Bulk

Published

2005

Operating Temperature

-55°C~150°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Package / Case

TO-274AA

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

93 ns

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

350W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

JESD-30 Code

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Turn Off Time-Nom (toff)

533 ns

Gate Charge

340nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

34ns/54ns

Switching Energy

790μJ (on), 1.98mJ (off)

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4PSC71KD

In stock

SKU: IRG4PSC71KD-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Package / Case

TO-274AA

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

85A

Number of Elements

1

Test Conditions

480V, 60A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Published

1999

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reverse Recovery Time

82ns

Voltage - Collector Emitter Breakdown (Max)

600V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

350W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

JESD-30 Code

R-PSIP-T3

Qualification Status

Not Qualified

Turn On Time

191 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Turn Off Time-Nom (toff)

517 ns

Gate Charge

340nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

82ns/282ns

Switching Energy

3.95mJ (on), 2.33mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4PSC71KDPBF

In stock

SKU: IRG4PSC71KDPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-274AA

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 60A, 5 Ω, 15V

Turn Off Delay Time

282 ns

Current Rating

85A

Factory Lead Time

13 Weeks

Published

1998

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

350W

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 60A

Turn Off Time-Nom (toff)

517 ns

Input Type

Standard

Turn On Delay Time

82 ns

Transistor Application

MOTOR CONTROL

Rise Time

107ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

85A

Reverse Recovery Time

82 ns

Turn On Time

191 ns

Power Dissipation

350W

Case Connection

COLLECTOR

Gate Charge

340nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

82ns/282ns

Switching Energy

3.95mJ (on), 2.33mJ (off)

Height

20.8mm

Length

16.0782mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PSC71UDPBF

In stock

SKU: IRG4PSC71UDPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-274AA

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 60A, 5 Ω, 15V

Turn Off Delay Time

245 ns

Power Dissipation

350W

Factory Lead Time

13 Weeks

Published

1999

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

350W

Current Rating

85A

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Continuous Collector Current

85A

Turn Off Time-Nom (toff)

503 ns

Transistor Application

POWER CONTROL

Rise Time

94ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

85A

Reverse Recovery Time

82 ns

Turn On Time

179 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

Max Junction Temperature (Tj)

150°C

Input Type

Standard

Turn On Delay Time

90 ns

Gate Charge

340nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

90ns/245ns

Switching Energy

3.26mJ (on), 2.27mJ (off)

Height

24.8mm

Length

16.1mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4PSC71UPBF

In stock

SKU: IRG4PSC71UPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-274AA

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 60A, 5 Ω, 15V

Turn Off Delay Time

56 ns

Element Configuration

Single

Factory Lead Time

22 Weeks

Published

1999

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

350W

Current Rating

85A

Operating Temperature

-55°C~150°C TJ

Power Dissipation

350W

Gate Charge

340nC

Current - Collector Pulsed (Icm)

200A

Turn On Delay Time

34 ns

Transistor Application

POWER CONTROL

Rise Time

50ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

85A

Turn On Time

79 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 60A

Turn Off Time-Nom (toff)

304 ns

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

34ns/56ns

Switching Energy

420μJ (on), 1.99mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

20.8mm

Length

16.0782mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4PSH71U

In stock

SKU: IRG4PSH71U-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Package / Case

TO-274AA

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

99A

Number of Elements

1

Test Conditions

960V, 70A, 5 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

ULTRA FAST SWITCHING

Terminal Position

SINGLE

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

121 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

350W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JESD-30 Code

R-PSIP-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 70A

Turn Off Time-Nom (toff)

810 ns

Gate Charge

370nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

51ns/280ns

Switching Energy

4.77mJ (on), 9.54mJ (off)

RoHS Status

Non-RoHS Compliant