Showing 949–960 of 3680 results
Infineon Technologies IRG4PSH71UDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-274AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 70A, 5 Ω, 15V |
| Turn Off Delay Time |
350 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA FAST SWITCHING |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
350W |
| Current Rating |
99A |
| Element Configuration |
Single |
| Power Dissipation |
350W |
| Mount |
Through Hole |
| Factory Lead Time |
11 Weeks |
| Gate Charge |
380nC |
| Turn On Delay Time |
46 ns |
| Rise Time |
77ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
99A |
| Reverse Recovery Time |
110 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
121 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 70A |
| Turn Off Time-Nom (toff) |
810 ns |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
46ns/250ns |
| Input Type |
Standard |
| Switching Energy |
8.8mJ (on), 9.4mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
4.699mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
Infineon Technologies IRG4PSH71UPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Test Conditions |
960V, 70A, 5Ohm, 15V |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Published |
2004 |
| Packaging |
Bulk |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current-Collector (Ic) (Max) |
99A |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Supplier Device Package |
SUPER-247™ (TO-274AA) |
| Number of Pins |
3 |
| Package / Case |
TO-274AA |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Current Rating |
99A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| RoHS Status |
RoHS Compliant |
| Switching Energy |
4.77mJ (on), 9.54mJ (off) |
| Td (on/off) @ 25°C |
51ns/280ns |
| Current - Collector Pulsed (Icm) |
200A |
| Gate Charge |
370nC |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 70A |
| Max Collector Current |
99A |
| Max Power Dissipation |
350W |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Rise Time |
70ns |
| Power - Max |
350W |
| Input Type |
Standard |
| Power Dissipation |
350W |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
Infineon Technologies IRG4RC10KD
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
9A |
| Number of Elements |
1 |
| Test Conditions |
480V, 5A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA FAST SOFT RECOVERY |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-609 Code |
e3 |
| Qualification Status |
Not Qualified |
| Turn On Time |
78 ns |
| Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
| Input Type |
Standard |
| Power - Max |
38W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
28ns |
| JEDEC-95 Code |
TO-252AA |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
38W |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Turn Off Time-Nom (toff) |
410 ns |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
49ns/97ns |
| Switching Energy |
250μJ (on), 140μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
210ns |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4RC10KDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D-Pak |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
9A |
| Test Conditions |
480V, 5A, 100Ohm, 15V |
| Current Rating |
9A |
| Mount |
Surface Mount |
| Published |
2004 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
IRG4RC10KDPBF |
| Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
| Gate Charge |
19nC |
| Input Type |
Standard |
| Power - Max |
38W |
| Collector Emitter Voltage (VCEO) |
2.62V |
| Max Collector Current |
9A |
| Reverse Recovery Time |
28 ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Element Configuration |
Single |
| Power Dissipation |
38W |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
49ns/97ns |
| Switching Energy |
250μJ (on), 140μJ (off) |
| Height |
2.39mm |
| Length |
6.73mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG4RC10KPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Voltage - Rated DC |
600V |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Published |
2004 |
| Max Power Dissipation |
38W |
| Packaging |
Tube |
| Test Conditions |
480V, 5A, 100Ohm, 15V |
| Current-Collector (Ic) (Max) |
9A |
| Collector-Emitter Breakdown Voltage |
600V |
| Supplier Device Package |
D-Pak |
| Number of Pins |
3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Element Configuration |
Single |
| Gate Charge |
19nC |
| RoHS Status |
RoHS Compliant |
| REACH SVHC |
No SVHC |
| Radiation Hardening |
No |
| Switching Energy |
160μJ (on), 100μJ (off) |
| Td (on/off) @ 25°C |
11ns/51ns |
| Current - Collector Pulsed (Icm) |
18A |
| Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
| Current Rating |
9A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Max Collector Current |
9A |
| Collector Emitter Voltage (VCEO) |
2.62V |
| Power - Max |
38W |
| Input Type |
Standard |
| Power Dissipation |
38W |
| Lead Free |
Lead Free |
Infineon Technologies IRG4RC10KTRL
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
9A |
| Number of Elements |
1 |
| Test Conditions |
480V, 5A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
38 ns |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Power - Max |
38W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-252AA |
| JESD-30 Code |
R-PSSO-G2 |
| Base Part Number |
IRG4RC10K |
| Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
417 ns |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
11ns/51ns |
| Switching Energy |
160μJ (on), 100μJ (off) |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4RC10KTRR
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
9A |
| Number of Elements |
1 |
| Test Conditions |
480V, 5A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
38 ns |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Power - Max |
38W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-252AA |
| JESD-30 Code |
R-PSSO-G2 |
| Base Part Number |
IRG4RC10K |
| Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
417 ns |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
11ns/51ns |
| Switching Energy |
160μJ (on), 100μJ (off) |
| Qualification Status |
Not Qualified |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4RC10SD
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e0 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
14A |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
245 |
| Mounting Type |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin/Lead (Sn/Pb) |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Published |
2007 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JEDEC-95 Code |
TO-252AA |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
38W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
28ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4RC10SDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Obsolete |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
31ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
Infineon Technologies IRG4RC10SDTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
14A |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
IRG4RC10SDPBF |
| Input Type |
Standard |
| Power - Max |
38W |
| Reverse Recovery Time |
28ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
Infineon Technologies IRG4RC10SDTRPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
350.003213mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2004 |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
13 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| JESD-609 Code |
e3 |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
1780 ns |
| Gate Charge |
15nC |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
32ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Max Breakdown Voltage |
600V |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Power Dissipation |
38W |
| Case Connection |
COLLECTOR |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.223mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG4RC10SDTRPBFBTMA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Current-Collector (Ic) (Max) |
14A |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
HEXFRED® |
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Power - Max |
38W |
| Input Type |
Standard |
| Reverse Recovery Time |
28ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |