Transistors - IGBTs - Single

Infineon Technologies IRG4RC10SDTRRP

In stock

SKU: IRG4RC10SDTRRP-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Base Part Number

IRG4RC10SDPBF

Factory Lead Time

17 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

38W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

30

Published

1999

JESD-30 Code

R-PSSO-G2

Turn On Time

106 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

JEDEC-95 Code

TO-252AA

Element Configuration

Single

Power Dissipation

38W

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

1080ns

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC10SPBF

In stock

SKU: IRG4RC10SPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D-Pak

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

14A

Test Conditions

480V, 8A, 100Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Current Rating

14A

Mount

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Max Power Dissipation

38W

Packaging

Tube

Base Part Number

IRG4RC10SPBF

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Input Type

Standard

Power - Max

38W

Rise Time

28ns

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Element Configuration

Single

Power Dissipation

38W

Td (on/off) @ 25°C

25ns/630ns

Switching Energy

140μJ (on), 2.58mJ (off)

Height

2.39mm

Length

6.73mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC10STRRPBF

In stock

SKU: IRG4RC10STRRPBF-9
Manufacturer

Infineon Technologies

Max Power Dissipation

38W

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D-Pak

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

14A

Test Conditions

480V, 8A, 100Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2007

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Surface Mount

Element Configuration

Single

Base Part Number

IRG4RC10SPBF

Power Dissipation

38W

Input Type

Standard

Power - Max

38W

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Voltage - Collector Emitter Breakdown (Max)

600V

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

25ns/630ns

Switching Energy

140μJ (on), 2.58mJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC10UDPBF

In stock

SKU: IRG4RC10UDPBF-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mounting Type

Surface Mount

Number of Pins

3

Weight

350.003213mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Turn Off Delay Time

87 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

1999

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

38W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

8.5A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRG4RC10UDPBF

Mount

Surface Mount

Factory Lead Time

17 Weeks

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Power Dissipation

38W

Input Type

Standard

Turn On Delay Time

40 ns

Transistor Application

POWER CONTROL

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

Reverse Recovery Time

28 ns

JEDEC-95 Code

TO-252AA

Max Breakdown Voltage

600V

Turn On Time

56 ns

Turn Off Time-Nom (toff)

345 ns

Gate Charge

15nC

Element Configuration

Single

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

40ns/87ns

Switching Energy

140μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Fall Time-Max (tf)

210ns

Height

1.2446mm

Length

6.7056mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Contains Lead

Infineon Technologies IRG4RC10UPBF

In stock

SKU: IRG4RC10UPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D-Pak

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

8.5A

Test Conditions

480V, 5A, 100Ohm, 15V

Voltage - Rated DC

600V

Mount

Surface Mount

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Termination

SMD/SMT

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Operating Temperature

-55°C~150°C TJ

Max Power Dissipation

38W

Max Collector Current

8.5A

Voltage - Collector Emitter Breakdown (Max)

600V

Element Configuration

Single

Power Dissipation

38W

Input Type

Standard

Power - Max

38W

Rise Time

11ns

Collector Emitter Voltage (VCEO)

2.6V

Current Rating

8.5A

Base Part Number

IRG4RC10UPBF

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Gate Charge

15nC

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

19ns/116ns

Switching Energy

80μJ (on), 160μJ (off)

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC10UTRLPBF

In stock

SKU: IRG4RC10UTRLPBF-9
Manufacturer

Infineon Technologies

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D-Pak

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

8.5A

Test Conditions

480V, 5A, 100Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Max Power Dissipation

38W

Current Rating

8.5A

Base Part Number

IRG4RC10UPBF

Element Configuration

Single

Power Dissipation

38W

Input Type

Standard

Power - Max

38W

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Gate Charge

15nC

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

19ns/116ns

Switching Energy

80μJ (on), 160μJ (off)

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC10UTRPBF

In stock

SKU: IRG4RC10UTRPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

350.003213mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSSO-G2

Factory Lead Time

13 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Additional Feature

ULTRA FAST

Voltage - Rated DC

600V

Max Power Dissipation

38W

Terminal Form

GULL WING

Current Rating

8.5A

Base Part Number

IRG4RC10UPBF

Packaging

Tape & Reel (TR)

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Turn Off Time-Nom (toff)

330 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

11ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

JEDEC-95 Code

TO-252AA

Max Breakdown Voltage

600V

Turn On Time

32 ns

Power Dissipation

38W

Case Connection

COLLECTOR

Gate Charge

15nC

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

19ns/116ns

Switching Energy

80μJ (on), 160μJ (off)

Height

1.2446mm

Length

6.7056mm

Width

6.223mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Contains Lead

Infineon Technologies IRG4RC20F

In stock

SKU: IRG4RC20F-9
Manufacturer

Infineon Technologies

JESD-609 Code

e0

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

22A

Number of Elements

1

Test Conditions

480V, 12A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Terminal Form

GULL WING

Mounting Type

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Additional Feature

FAST

HTS Code

8541.29.00.95

Terminal Position

SINGLE

Published

2001

Peak Reflow Temperature (Cel)

245

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-252AA

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

66W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRG4RC20F

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

706 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

26ns/194ns

Switching Energy

190μJ (on), 920μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4RC20FTR

In stock

SKU: IRG4RC20FTR-9
Manufacturer

Infineon Technologies

Published

2001

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

22A

Number of Elements

1

Test Conditions

480V, 12A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Time@Peak Reflow Temperature-Max (s)

30

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

600V

Qualification Status

Not Qualified

Configuration

SINGLE

Input Type

Standard

Power - Max

66W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Base Part Number

IRG4RC20F

JESD-30 Code

R-PSSO-G2

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

706 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

26ns/194ns

Switching Energy

190μJ (on), 920μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4RC20FTRLPBF

In stock

SKU: IRG4RC20FTRLPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

22A

Number of Elements

1

Test Conditions

480V, 12A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Peak Reflow Temperature (Cel)

260

Factory Lead Time

13 Weeks

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

GULL WING

Packaging

Tape & Reel (TR)

Reach Compliance Code

compliant

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

600V

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Configuration

SINGLE

Input Type

Standard

Power - Max

66W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

IRG4RC20FPBF

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Turn Off Time-Nom (toff)

706 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

26ns/194ns

Switching Energy

190μJ (on), 920μJ (off)

RoHS Status

RoHS Compliant

Infineon Technologies IRG4RC20FTRPBF

In stock

SKU: IRG4RC20FTRPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

350.003213mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 50 Ω, 15V

Turn Off Delay Time

194 ns

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

13 Weeks

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

66W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

22A

Packaging

Tape & Reel (TR)

Base Part Number

IRG4RC20FPBF

Turn On Time

51 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 12A

Power Dissipation

66W

Input Type

Standard

Turn On Delay Time

26 ns

Transistor Application

POWER CONTROL

Rise Time

24ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

22A

JEDEC-95 Code

TO-252AA

Max Breakdown Voltage

600V

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Turn Off Time-Nom (toff)

706 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

44A

Td (on/off) @ 25°C

26ns/194ns

Switching Energy

190μJ (on), 920μJ (off)

Height

1.8034mm

Length

6.7056mm

Width

6.22mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG6B330UDPBF

In stock

SKU: IRG6B330UDPBF-9
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

330V

Operating Temperature

-40°C~150°C TJ

Packaging

Tube

Test Conditions

196V, 25A, 10 Ω

Published

2010

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

160W

Mount

Through Hole

Factory Lead Time

16 Weeks

JEDEC-95 Code

TO-220AB

Turn On Time

83 ns

Input Type

Standard

Power - Max

160W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.76V

Max Collector Current

70A

Reverse Recovery Time

60 ns

Qualification Status

Not Qualified

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.76V @ 15V, 120A

Turn Off Time-Nom (toff)

411 ns

IGBT Type

Trench

Gate Charge

85nC

Td (on/off) @ 25°C

47ns/176ns

Gate-Emitter Thr Voltage-Max

5V

Element Configuration

Single

RoHS Status

ROHS3 Compliant