Showing 985–996 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRG7CH28UEF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 15A, 22 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Packaging |
Bulk |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.55V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.55V @ 15V, 2.5A |
Gate Charge |
60nC |
Td (on/off) @ 25°C |
35ns/225ns |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7CH30K10EF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Test Conditions |
600V, 10A, 22 Ω, 15V |
ECCN Code |
EAR99 |
Number of Terminations |
2 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Published |
2013 |
Packaging |
Bulk |
Terminal Position |
UPPER |
Operating Temperature |
-40°C~175°C TJ |
Number of Elements |
1 |
Current-Collector (Ic) (Max) |
10A |
Transistor Element Material |
SILICON |
Surface Mount |
YES |
Package / Case |
Die |
Mounting Type |
Surface Mount |
Factory Lead Time |
16 Weeks |
JESD-30 Code |
R-XUUC-N2 |
Turn Off Time-Nom (toff) |
311 ns |
Gate-Emitter Thr Voltage-Max |
7.5V |
VCEsat-Max |
2.2 V |
Gate-Emitter Voltage-Max |
30V |
Td (on/off) @ 25°C |
10ns/90ns |
Gate Charge |
4.8nC |
IGBT Type |
Trench |
Vce(on) (Max) @ Vge, Ic |
2.56V @ 15V, 10A |
Terminal Form |
NO LEAD |
Turn On Time |
38.5 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Input Type |
Standard |
Configuration |
SINGLE |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG7CH37K10EF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
16 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Current-Collector (Ic) (Max) |
15A |
Test Conditions |
600V, 15A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Packaging |
Bulk |
Published |
2013 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Input Type |
Standard |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 15A |
Gate Charge |
80nC |
Td (on/off) @ 25°C |
28ns/122ns |
Gate-Emitter Voltage-Max |
30V |
Gate-Emitter Thr Voltage-Max |
7.5V |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG7CH42UEF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 30A, 10Ohm, 15V |
Operating Temperature |
-40°C~175°C TJ |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Obsolete |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.4V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 5A |
Gate Charge |
157nC |
Td (on/off) @ 25°C |
25ns/229ns |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7CH44K10EF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
16 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
25A |
Number of Elements |
1 |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Packaging |
Bulk |
Published |
2012 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Position |
UPPER |
Terminal Form |
NO LEAD |
JESD-30 Code |
S-XUUC-N2 |
Configuration |
SINGLE |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
100 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 25A |
Turn Off Time-Nom (toff) |
475 ns |
Gate Charge |
160nC |
Td (on/off) @ 25°C |
60ns/230ns |
Gate-Emitter Voltage-Max |
30V |
VCEsat-Max |
1.63 V |
Gate-Emitter Thr Voltage-Max |
7.5V |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG7CH50K10EF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Test Conditions |
600V, 35A, 10 Ω, 15V |
ECCN Code |
EAR99 |
Number of Terminations |
2 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Published |
2013 |
Packaging |
Bulk |
Terminal Position |
UPPER |
Operating Temperature |
-40°C~175°C TJ |
Number of Elements |
1 |
Current-Collector (Ic) (Max) |
35A |
Transistor Element Material |
SILICON |
Surface Mount |
YES |
Package / Case |
Die |
Mounting Type |
Surface Mount |
Factory Lead Time |
16 Weeks |
JESD-30 Code |
S-XUUC-N2 |
Turn Off Time-Nom (toff) |
635 ns |
Gate-Emitter Thr Voltage-Max |
7.5V |
VCEsat-Max |
2.2 V |
Gate-Emitter Voltage-Max |
30V |
Td (on/off) @ 25°C |
50ns/280ns |
Gate Charge |
170nC |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
Terminal Form |
NO LEAD |
Turn On Time |
120 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Polarity/Channel Type |
N-CHANNEL |
Transistor Application |
POWER CONTROL |
Input Type |
Standard |
Configuration |
SINGLE |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG7CH73K10EF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 75A, 4.7Ohm, 15V |
Operating Temperature |
-40°C~175°C TJ |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Obsolete |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.6V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 20A |
Gate Charge |
360nC |
Td (on/off) @ 25°C |
63ns/267ns |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7CH73K10EF-R
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 75A, 5Ohm, 15V |
Operating Temperature |
-40°C~175°C TJ |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Obsolete |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.6V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 20A |
Gate Charge |
420nC |
Td (on/off) @ 25°C |
105ns/45ns |
RoHS Status |
RoHS Compliant |