Showing 1009–1020 of 3680 results
Infineon Technologies IRG7PH30K10PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 9A, 22 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Power Dissipation |
210W |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
210W |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Rise Time-Max |
41ns |
| Element Configuration |
Single |
| Published |
2009 |
| Case Connection |
COLLECTOR |
| Gate Charge |
45nC |
| Current - Collector Pulsed (Icm) |
27A |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.35V |
| Max Collector Current |
33A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 9A |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
14ns/110ns |
| Switching Energy |
530μJ (on), 380μJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
56ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH35U-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2010 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Base Part Number |
IRG7PH35 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
210W |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tube |
| Qualification Status |
Not Qualified |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Input Type |
Standard |
| Power - Max |
210W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.2V |
| Max Collector Current |
55A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench |
| Gate Charge |
130nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
30ns/160ns |
| Switching Energy |
1.06mJ (on), 620μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
105ns |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH35UD-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Qualification Status |
Not Qualified |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
180W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
IRG7PH35 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Power - Max |
180W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.2V |
| Max Collector Current |
50A |
| Reverse Recovery Time |
105 ns |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench |
| Gate Charge |
85nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
30ns/160ns |
| Switching Energy |
1.06mJ (on), 620μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH35UD1-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Base Part Number |
IRG7PH35 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
179W |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
400 ns |
| Input Type |
Standard |
| Power - Max |
179W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.2V |
| Max Collector Current |
50A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Element Configuration |
Single |
| Qualification Status |
Not Qualified |
| IGBT Type |
Trench |
| Gate Charge |
130nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
-/160ns |
| Switching Energy |
620μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
105ns |
| REACH SVHC |
No SVHC |
| Case Connection |
COLLECTOR |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH35UD1MPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Current-Collector (Ic) (Max) |
50A |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
compliant |
| Base Part Number |
IRG7PH35 |
| Input Type |
Standard |
| Power - Max |
179W |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Power Dissipation-Max (Abs) |
179W |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| IGBT Type |
Trench |
| Gate Charge |
130nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
-/160ns |
| Switching Energy |
620μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
105ns |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH35UD1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Qualification Status |
Not Qualified |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
50A |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Part Status |
Obsolete |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Reach Compliance Code |
compliant |
| Base Part Number |
IRG7PH35 |
| JESD-30 Code |
R-PSFM-T3 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench |
| Power - Max |
179W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Power Dissipation-Max (Abs) |
179W |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Case Connection |
COLLECTOR |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Gate Charge |
85nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
-/160ns |
| Switching Energy |
620μJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
105ns |
| Input Type |
Standard |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH35UDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Turn Off Delay Time |
160 ns |
| Input Type |
Standard |
| Factory Lead Time |
16 Weeks |
| Published |
2010 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
180W |
| Element Configuration |
Single |
| Power Dissipation |
180W |
| Case Connection |
COLLECTOR |
| Operating Temperature |
-55°C~150°C TJ |
| Turn On Delay Time |
30 ns |
| Gate Charge |
85nC |
| Current - Collector Pulsed (Icm) |
60A |
| Collector Emitter Voltage (VCEO) |
2.2V |
| Max Collector Current |
50A |
| Reverse Recovery Time |
105 ns |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
400 ns |
| IGBT Type |
Trench |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Td (on/off) @ 25°C |
30ns/160ns |
| Switching Energy |
1.06mJ (on), 620μJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH37K10D-EPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 15A, 10 Ω, 15V |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
216W |
| Rise Time-Max |
45ns |
| Mount |
Through Hole |
| Power - Max |
216W |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
45A |
| Reverse Recovery Time |
120 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 15A |
| Gate Charge |
135nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
50ns/240ns |
| Switching Energy |
1mJ (on), 600μJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
100ns |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH42U-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power Dissipation |
385W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 30A, 10 Ω, 15V |
| Turn Off Delay Time |
229 ns |
| Packaging |
Tube |
| Published |
2004 |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
385W |
| Base Part Number |
IRG7PH42 |
| Rise Time-Max |
41ns |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Td (on/off) @ 25°C |
25ns/229ns |
| Switching Energy |
2.11mJ (on), 1.18mJ (off) |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
90A |
| Reverse Recovery Time |
153 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
| IGBT Type |
Trench |
| Gate Charge |
157nC |
| Turn On Delay Time |
25 ns |
| Input Type |
Standard |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
86ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Polarity/Channel Type |
N-CHANNEL |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH42UD1-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 30A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
313W |
| Peak Reflow Temperature (Cel) |
250 |
| Packaging |
Tube |
| Base Part Number |
IRG7PH42 |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
460 ns |
| Input Type |
Standard |
| Power - Max |
313W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
85A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| IGBT Type |
Trench |
| Gate Charge |
180nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
-/270ns |
| Switching Energy |
1.21mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH42UD1MPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 30A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
313W |
| Mount |
Through Hole |
| Power - Max |
313W |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
85A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
| IGBT Type |
Trench |
| Gate Charge |
270nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
-/270ns |
| Switching Energy |
1.21mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |