Showing 1021–1032 of 3680 results
Infineon Technologies IRG7PH42UD1PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2013 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 30A, 10 Ω, 15V |
| Turn Off Delay Time |
300 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
313W |
| Peak Reflow Temperature (Cel) |
250 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| IGBT Type |
Trench |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
85A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
460 ns |
| Gate Charge |
180nC |
| Current - Collector Pulsed (Icm) |
200A |
| Power Dissipation |
313W |
| Td (on/off) @ 25°C |
-/270ns |
| Switching Energy |
1.21mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Type |
Standard |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH42UD2PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 30A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
321W |
| Peak Reflow Temperature (Cel) |
250 |
| Packaging |
Tube |
| Base Part Number |
IRG7PH42 |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.02V @ 15V, 30A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
321W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.02V |
| Max Collector Current |
60A |
| JEDEC-95 Code |
TO-247AC |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
470 ns |
| IGBT Type |
Trench |
| Gate Charge |
234nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
-/233ns |
| Switching Energy |
1.32mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
85ns |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH44K10DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Power - Max |
320W |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 10 Ω, 15V |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2013 |
| Part Status |
Obsolete |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
320W |
| Rise Time-Max |
70ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Switching Energy |
2.1mJ (on), 1.3mJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Reverse Recovery Time |
130 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
| Gate Charge |
200nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
75ns/315ns |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Polarity/Channel Type |
N-CHANNEL |
| Fall Time-Max (tf) |
115ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Max Collector Current |
70A |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH46U-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2011 |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Case Connection |
COLLECTOR |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
469W |
| Qualification Status |
Not Qualified |
| Rise Time-Max |
55ns |
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Turn Off Time-Nom (toff) |
700 ns |
| Power - Max |
469W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
130A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
| IGBT Type |
Trench |
| Gate Charge |
220nC |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
45ns/410ns |
| Switching Energy |
2.56mJ (on), 1.78mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
65ns |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH46UD-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Rise Time-Max |
60ns |
| Factory Lead Time |
14 Weeks |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
390W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Turn On Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
| Power - Max |
390W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
140 ns |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
680 ns |
| IGBT Type |
Trench |
| Gate Charge |
220nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
45ns/410ns |
| Switching Energy |
2.61mJ (on), 1.85mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
60ns |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG7PH46UDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Turn Off Delay Time |
410 ns |
| Input Type |
Standard |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
390W |
| Rise Time-Max |
60ns |
| Element Configuration |
Single |
| Power Dissipation |
390W |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Gate Charge |
220nC |
| Transistor Application |
POWER CONTROL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
140 ns |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
680 ns |
| IGBT Type |
Trench |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
45ns/410ns |
| Turn On Delay Time |
45 ns |
| Switching Energy |
2.61mJ (on), 1.85mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
60ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.3086mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Polarity/Channel Type |
N-CHANNEL |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH50K10D-EPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 35A, 5 Ω, 15V |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
400W |
| Rise Time-Max |
80ns |
| Mount |
Through Hole |
| Power - Max |
400W |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
90A |
| Reverse Recovery Time |
130 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 35A |
| Gate Charge |
300nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
90ns/340ns |
| Switching Energy |
2.3mJ (on), 1.6mJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
110ns |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH50K10DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 35A, 5 Ω, 15V |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
400W |
| Rise Time-Max |
80ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
400W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
90A |
| Reverse Recovery Time |
130 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 35A |
| Gate Charge |
300nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
90ns/340ns |
| Switching Energy |
2.3mJ (on), 1.6mJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
110ns |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG7PH50U-EP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 50A, 5 Ω, 15V |
| Rise Time-Max |
60ns |
| Mount |
Through Hole |
| Published |
2010 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
3 |
| Max Power Dissipation |
556W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Qualification Status |
Not Qualified |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Turn On Time |
75 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Power - Max |
556W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
140A |
| JEDEC-95 Code |
TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
710 ns |
| IGBT Type |
Trench |
| Gate Charge |
440nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
35ns/430ns |
| Switching Energy |
4.6mJ (on), 3.2mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
65ns |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PH50UPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 50A, 5 Ω, 15V |
| Input Type |
Standard |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
556W |
| Rise Time-Max |
60ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Delay Time |
430 ns |
| Turn On Delay Time |
35 ns |
| Gate Charge |
290nC |
| Current - Collector Pulsed (Icm) |
150A |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
140A |
| JEDEC-95 Code |
TO-247AC |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
75 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
710 ns |
| IGBT Type |
Trench |
| Power - Max |
556W |
| Transistor Application |
POWER CONTROL |
| Td (on/off) @ 25°C |
35ns/430ns |
| Switching Energy |
3.6mJ (on), 2.2mJ (off) |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
65ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |