Showing 1033–1044 of 3680 results
Infineon Technologies IRG7PSH54K10DPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Test Conditions |
600V, 50A, 5 Ω, 15V |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
247 |
| Weight |
38.000013g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Max Power Dissipation |
520W |
| Factory Lead Time |
19 Weeks |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Current-Collector (Ic) (Max) |
120A |
| Rise Time-Max |
105ns |
| Gate Charge |
435nC |
| Current - Collector Pulsed (Icm) |
200A |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
65A |
| Reverse Recovery Time |
170 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 50A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Td (on/off) @ 25°C |
110ns/490ns |
| Switching Energy |
4.8mJ (on), 2.8mJ (off) |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
90ns |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG7PSH73K10PBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-274AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 75A, 4.7 Ω, 15V |
| Turn Off Delay Time |
267 ns |
| Input Type |
Standard |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2010 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
1.15kW |
| Element Configuration |
Single |
| Power Dissipation |
1.15kW |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
13 Weeks |
| Gate Charge |
360nC |
| Power - Max |
1150W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Max Collector Current |
220A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
172 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
567 ns |
| IGBT Type |
Trench |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
63ns/267ns |
| Turn On Delay Time |
63 ns |
| Switching Energy |
7.7mJ (on), 4.6mJ (off) |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
20.8mm |
| Length |
16.0782mm |
| Width |
5.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
Infineon Technologies IRG7S313UTRLPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Cut Tape (CT) |
| Base Part Number |
IRG7S313UPBF |
| Max Power Dissipation |
78W |
| Min Operating Temperature |
-40°C |
| Max Operating Temperature |
150°C |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Element Configuration |
Dual |
| Published |
2009 |
| Test Conditions |
196V, 12A, 10Ohm |
| Current-Collector (Ic) (Max) |
40A |
| Collector-Emitter Breakdown Voltage |
330V |
| Supplier Device Package |
D2PAK |
| Number of Pins |
3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Input Type |
Standard |
| Vce(on) (Max) @ Vge, Ic |
2.14V @ 15V, 60A |
| Width |
24.3078mm |
| Length |
16.0782mm |
| Height |
4.7244mm |
| Td (on/off) @ 25°C |
1ns/65ns |
| Gate Charge |
33nC |
| IGBT Type |
Trench |
| Max Breakdown Voltage |
330V |
| Power Dissipation |
78W |
| Voltage - Collector Emitter Breakdown (Max) |
330V |
| Max Collector Current |
40A |
| Collector Emitter Voltage (VCEO) |
2.14V |
| Fall Time (Typ) |
68 ns |
| Rise Time |
13ns |
| Power - Max |
78W |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG8B08N120KDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 5A, 47 Ω, 15V |
| Operating Temperature |
-40°C~150°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
89W |
| Reach Compliance Code |
unknown |
| Input Type |
Standard |
| Power - Max |
89W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
15A |
| Reverse Recovery Time |
50 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 5A |
| Gate Charge |
45nC |
| Td (on/off) @ 25°C |
20ns/160ns |
| Switching Energy |
300μJ (on), 300μJ (off) |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG8CH106K10F
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Bulk |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 110A, 1Ohm, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Part Status |
Obsolete |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
2V |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 110A |
| Gate Charge |
700nC |
| Td (on/off) @ 25°C |
80ns/380ns |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG8CH184K10F
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Form |
NO LEAD |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
200A |
| Test Conditions |
600V, 200A, 2 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Bulk |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Position |
UNSPECIFIED |
| Factory Lead Time |
15 Weeks |
| Configuration |
SINGLE |
| JESD-30 Code |
R-XXUC-N |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
175 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 200A |
| Turn Off Time-Nom (toff) |
1015 ns |
| Gate Charge |
1110nC |
| Td (on/off) @ 25°C |
135ns/640ns |
| Gate-Emitter Voltage-Max |
30V |
| VCEsat-Max |
2 V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG8CH20K10F
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 15A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Bulk |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Reach Compliance Code |
unknown |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 15A |
| Gate Charge |
90nC |
| Td (on/off) @ 25°C |
20ns/170ns |
| Gate-Emitter Voltage-Max |
30V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |