Showing 1057–1068 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRGB30B60K
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2005 |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
78A |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Mounting Type |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
Qualification Status |
Not Qualified |
Turn On Time |
74 ns |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 30A |
Input Type |
Standard |
Power - Max |
370W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Configuration |
SINGLE |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
237 ns |
IGBT Type |
NPT |
Gate Charge |
102nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
46ns/185ns |
Switching Energy |
350μJ (on), 825μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRGB30B60KPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Case Connection |
COLLECTOR |
Packaging |
Tube |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
370W |
Current Rating |
78A |
Element Configuration |
Single |
Power Dissipation |
370W |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Current - Collector Pulsed (Icm) |
120A |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.35V |
Max Collector Current |
78A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
74 ns |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
237 ns |
IGBT Type |
NPT |
Gate Charge |
102nC |
Td (on/off) @ 25°C |
46ns/185ns |
Switching Energy |
350μJ (on), 825μJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.5V |
Fall Time-Max (tf) |
42ns |
Height |
16.51mm |
Length |
10.6426mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rise Time |
28ns |
Lead Free |
Lead Free |
Infineon Technologies IRGB4056DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 12A, 22 Ω, 15V |
Input Type |
Standard |
Factory Lead Time |
16 Weeks |
Packaging |
Tube |
Published |
2006 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
140W |
Element Configuration |
Single |
Power Dissipation |
140W |
Case Connection |
COLLECTOR |
Turn Off Delay Time |
94 ns |
Turn On Delay Time |
40 ns |
Gate Charge |
25nC |
Current - Collector Pulsed (Icm) |
48A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.85V |
Max Collector Current |
24A |
Reverse Recovery Time |
68 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
48 ns |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 12A |
Turn Off Time-Nom (toff) |
143 ns |
IGBT Type |
Trench |
Transistor Application |
POWER CONTROL |
Rise Time |
17ns |
Td (on/off) @ 25°C |
31ns/83ns |
Switching Energy |
75μJ (on), 225μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
9.02mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRGB4059DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn On Delay Time |
25 ns |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
2.2V |
Number of Elements |
1 |
Test Conditions |
400V, 4A, 100 Ω, 15V |
Turn Off Delay Time |
65 ns |
Operating Temperature |
-55°C~175°C TJ |
Published |
2001 |
Part Status |
Obsolete |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Max Power Dissipation |
56W |
Element Configuration |
Single |
Power Dissipation |
56W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Current - Collector Pulsed (Icm) |
16A |
Td (on/off) @ 25°C |
25ns/65ns |
Collector Emitter Voltage (VCEO) |
2.05V |
Max Collector Current |
8A |
Reverse Recovery Time |
55 ns |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
35 ns |
Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 4A |
Turn Off Time-Nom (toff) |
120 ns |
IGBT Type |
Trench |
Gate Charge |
9nC |
Rise Time |
10ns |
Transistor Application |
POWER CONTROL |
Switching Energy |
35μJ (on), 75μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
20ns |
Height |
9.02mm |
Length |
10.66mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
Infineon Technologies IRGB4060DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn On Delay Time |
39 ns |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.95V |
Number of Elements |
1 |
Test Conditions |
400V, 8A, 47 Ω, 15V |
Turn Off Delay Time |
106 ns |
Packaging |
Tube |
Published |
2006 |
Operating Temperature |
-55°C~175°C TJ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Max Power Dissipation |
99W |
Element Configuration |
Single |
Power Dissipation |
99W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
30ns/95ns |
Collector Emitter Voltage (VCEO) |
1.85V |
Max Collector Current |
16A |
Reverse Recovery Time |
60 ns |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 8A |
Turn Off Time-Nom (toff) |
152 ns |
IGBT Type |
Trench |
Gate Charge |
19nC |
Rise Time |
15ns |
Transistor Application |
POWER CONTROL |
Switching Energy |
70μJ (on), 145μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
26ns |
Height |
9.02mm |
Length |
10.66mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
Infineon Technologies IRGB4061DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 18A, 22 Ω, 15V |
Input Type |
Standard |
Factory Lead Time |
16 Weeks |
Packaging |
Tube |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
206W |
Element Configuration |
Single |
Power Dissipation |
206W |
Case Connection |
COLLECTOR |
Turn Off Delay Time |
105 ns |
Turn On Delay Time |
40 ns |
Gate Charge |
35nC |
Current - Collector Pulsed (Icm) |
72A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.95V |
Max Collector Current |
36A |
Reverse Recovery Time |
100 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
65 ns |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 18A |
Turn Off Time-Nom (toff) |
160 ns |
IGBT Type |
Trench |
Transistor Application |
POWER CONTROL |
Rise Time |
25ns |
Td (on/off) @ 25°C |
40ns/105ns |
Switching Energy |
95μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
9.02mm |
Length |
10.66mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRGB4062DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 24A, 10 Ω, 15V |
Turn Off Delay Time |
115 ns |
Turn On Delay Time |
53 ns |
Operating Temperature |
-55°C~175°C TJ |
Published |
2006 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
250W |
Element Configuration |
Single |
Power Dissipation |
250W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Current - Collector Pulsed (Icm) |
72A |
Rise Time |
22ns |
Collector Emitter Voltage (VCEO) |
1.95V |
Max Collector Current |
48A |
Reverse Recovery Time |
89 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
64 ns |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 24A |
Turn Off Time-Nom (toff) |
164 ns |
IGBT Type |
Trench |
Gate Charge |
50nC |
Td (on/off) @ 25°C |
41ns/104ns |
Switching Energy |
115μJ (on), 600μJ (off) |
Transistor Application |
POWER CONTROL |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
41ns |
Height |
9.02mm |
Length |
10.6426mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
Infineon Technologies IRGB4086PBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Collector-Emitter Breakdown Voltage |
300V |
Current-Collector (Ic) (Max) |
70A |
Test Conditions |
196V, 25A, 10Ohm |
Operating Temperature |
-40°C~150°C TJ |
Packaging |
Tube |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-40°C |
Max Power Dissipation |
160W |
Element Configuration |
Single |
Power Dissipation |
160W |
Input Type |
Standard |
Power - Max |
160W |
Collector Emitter Voltage (VCEO) |
2.96V |
Max Collector Current |
70A |
Voltage - Collector Emitter Breakdown (Max) |
300V |
Vce(on) (Max) @ Vge, Ic |
2.96V @ 15V, 120A |
IGBT Type |
Trench |
Gate Charge |
65nC |
Td (on/off) @ 25°C |
36ns/112ns |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRGB4607DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
2.299997g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Factory Lead Time |
6 Weeks |
Packaging |
Tube |
Published |
2013 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
58W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Test Conditions |
400V, 4A, 100 Ω, 15V |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 4A |
Turn Off Time-Nom (toff) |
95 ns |
Power - Max |
58W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.05V |
Max Collector Current |
11A |
Reverse Recovery Time |
48 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
51 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Gate Charge |
9nC |
Current - Collector Pulsed (Icm) |
12A |
Td (on/off) @ 25°C |
27ns/120ns |
Switching Energy |
140μJ (on), 62μJ (off) |
Height |
16.51mm |
Length |
10.67mm |
Width |
4.83mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRGB4620DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Element Configuration |
Single |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 12A, 22 Ω, 15V |
Packaging |
Tube |
Published |
2013 |
Operating Temperature |
-40°C~175°C TJ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
140W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Td (on/off) @ 25°C |
31ns/83ns |
Switching Energy |
75μJ (on), 225μJ (off) |
Collector Emitter Voltage (VCEO) |
1.85V |
Max Collector Current |
32A |
Reverse Recovery Time |
68 ns |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 12A |
Gate Charge |
25nC |
Current - Collector Pulsed (Icm) |
36A |
Power - Max |
140W |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
16.51mm |
Length |
10.67mm |
Width |
4.83mm |
REACH SVHC |
No SVHC |
Polarity/Channel Type |
N-CHANNEL |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRGB4640DPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
18 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 24A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Type |
Standard |
Power - Max |
250W |
Collector Emitter Voltage (VCEO) |
1.9V |
Max Collector Current |
65A |
Reverse Recovery Time |
89 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 24A |
Gate Charge |
75nC |
Current - Collector Pulsed (Icm) |
72A |
Td (on/off) @ 25°C |
41ns/104ns |
Switching Energy |
115μJ (on), 600μJ (off) |
RoHS Status |
RoHS Compliant |