Showing 1057–1068 of 3680 results

Transistors - IGBTs - Single

Infineon Technologies IRGB30B60K

In stock

SKU: IRGB30B60K-9
Manufacturer

Infineon Technologies

Published

2005

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

78A

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Qualification Status

Not Qualified

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Input Type

Standard

Power - Max

370W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Configuration

SINGLE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRGB30B60KPBF

In stock

SKU: IRGB30B60KPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Case Connection

COLLECTOR

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

370W

Current Rating

78A

Element Configuration

Single

Power Dissipation

370W

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

120A

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

78A

JEDEC-95 Code

TO-220AB

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Gate Charge

102nC

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Height

16.51mm

Length

10.6426mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

28ns

Lead Free

Lead Free

Infineon Technologies IRGB30B60KPBF-INF

In stock

SKU: IRGB30B60KPBF-INF-9
Manufacturer

Infineon Technologies

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Series

*

Infineon Technologies IRGB4056DPBF

In stock

SKU: IRGB4056DPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 12A, 22 Ω, 15V

Input Type

Standard

Factory Lead Time

16 Weeks

Packaging

Tube

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

140W

Element Configuration

Single

Power Dissipation

140W

Case Connection

COLLECTOR

Turn Off Delay Time

94 ns

Turn On Delay Time

40 ns

Gate Charge

25nC

Current - Collector Pulsed (Icm)

48A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

24A

Reverse Recovery Time

68 ns

JEDEC-95 Code

TO-220AB

Turn On Time

48 ns

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Turn Off Time-Nom (toff)

143 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

17ns

Td (on/off) @ 25°C

31ns/83ns

Switching Energy

75μJ (on), 225μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.02mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGB4059DPBF

In stock

SKU: IRGB4059DPBF-9
Manufacturer

Infineon Technologies

Turn On Delay Time

25 ns

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

2.2V

Number of Elements

1

Test Conditions

400V, 4A, 100 Ω, 15V

Turn Off Delay Time

65 ns

Operating Temperature

-55°C~175°C TJ

Published

2001

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST SOFT RECOVERY

Max Power Dissipation

56W

Element Configuration

Single

Power Dissipation

56W

Case Connection

COLLECTOR

Input Type

Standard

Mounting Type

Through Hole

Mount

Through Hole

Current - Collector Pulsed (Icm)

16A

Td (on/off) @ 25°C

25ns/65ns

Collector Emitter Voltage (VCEO)

2.05V

Max Collector Current

8A

Reverse Recovery Time

55 ns

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

35 ns

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Turn Off Time-Nom (toff)

120 ns

IGBT Type

Trench

Gate Charge

9nC

Rise Time

10ns

Transistor Application

POWER CONTROL

Switching Energy

35μJ (on), 75μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

20ns

Height

9.02mm

Length

10.66mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

Infineon Technologies IRGB4060DPBF

In stock

SKU: IRGB4060DPBF-9
Manufacturer

Infineon Technologies

Turn On Delay Time

39 ns

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.95V

Number of Elements

1

Test Conditions

400V, 8A, 47 Ω, 15V

Turn Off Delay Time

106 ns

Packaging

Tube

Published

2006

Operating Temperature

-55°C~175°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Max Power Dissipation

99W

Element Configuration

Single

Power Dissipation

99W

Case Connection

COLLECTOR

Input Type

Standard

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

32A

Td (on/off) @ 25°C

30ns/95ns

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

16A

Reverse Recovery Time

60 ns

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 8A

Turn Off Time-Nom (toff)

152 ns

IGBT Type

Trench

Gate Charge

19nC

Rise Time

15ns

Transistor Application

POWER CONTROL

Switching Energy

70μJ (on), 145μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

26ns

Height

9.02mm

Length

10.66mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

Infineon Technologies IRGB4061DPBF

In stock

SKU: IRGB4061DPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 18A, 22 Ω, 15V

Input Type

Standard

Factory Lead Time

16 Weeks

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

206W

Element Configuration

Single

Power Dissipation

206W

Case Connection

COLLECTOR

Turn Off Delay Time

105 ns

Turn On Delay Time

40 ns

Gate Charge

35nC

Current - Collector Pulsed (Icm)

72A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

36A

Reverse Recovery Time

100 ns

JEDEC-95 Code

TO-220AB

Turn On Time

65 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 18A

Turn Off Time-Nom (toff)

160 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

25ns

Td (on/off) @ 25°C

40ns/105ns

Switching Energy

95μJ (on), 350μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.02mm

Length

10.66mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGB4062DPBF

In stock

SKU: IRGB4062DPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Turn Off Delay Time

115 ns

Turn On Delay Time

53 ns

Operating Temperature

-55°C~175°C TJ

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

250W

Element Configuration

Single

Power Dissipation

250W

Case Connection

COLLECTOR

Input Type

Standard

Mount

Through Hole

Factory Lead Time

26 Weeks

Current - Collector Pulsed (Icm)

72A

Rise Time

22ns

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Reverse Recovery Time

89 ns

JEDEC-95 Code

TO-220AB

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

Turn Off Time-Nom (toff)

164 ns

IGBT Type

Trench

Gate Charge

50nC

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Transistor Application

POWER CONTROL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

41ns

Height

9.02mm

Length

10.6426mm

Width

4.82mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

Infineon Technologies IRGB4086PBF

In stock

SKU: IRGB4086PBF-9
Manufacturer

Infineon Technologies

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Collector-Emitter Breakdown Voltage

300V

Current-Collector (Ic) (Max)

70A

Test Conditions

196V, 25A, 10Ohm

Operating Temperature

-40°C~150°C TJ

Packaging

Tube

Published

2009

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-40°C

Max Power Dissipation

160W

Element Configuration

Single

Power Dissipation

160W

Input Type

Standard

Power - Max

160W

Collector Emitter Voltage (VCEO)

2.96V

Max Collector Current

70A

Voltage - Collector Emitter Breakdown (Max)

300V

Vce(on) (Max) @ Vge, Ic

2.96V @ 15V, 120A

IGBT Type

Trench

Gate Charge

65nC

Td (on/off) @ 25°C

36ns/112ns

RoHS Status

RoHS Compliant

Infineon Technologies IRGB4607DPBF

In stock

SKU: IRGB4607DPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Factory Lead Time

6 Weeks

Packaging

Tube

Published

2013

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

58W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Test Conditions

400V, 4A, 100 Ω, 15V

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.05V @ 15V, 4A

Turn Off Time-Nom (toff)

95 ns

Power - Max

58W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.05V

Max Collector Current

11A

Reverse Recovery Time

48 ns

JEDEC-95 Code

TO-220AB

Turn On Time

51 ns

Case Connection

COLLECTOR

Input Type

Standard

Gate Charge

9nC

Current - Collector Pulsed (Icm)

12A

Td (on/off) @ 25°C

27ns/120ns

Switching Energy

140μJ (on), 62μJ (off)

Height

16.51mm

Length

10.67mm

Width

4.83mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRGB4620DPBF

In stock

SKU: IRGB4620DPBF-9
Manufacturer

Infineon Technologies

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 12A, 22 Ω, 15V

Packaging

Tube

Published

2013

Operating Temperature

-40°C~175°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

140W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Through Hole

Factory Lead Time

16 Weeks

Td (on/off) @ 25°C

31ns/83ns

Switching Energy

75μJ (on), 225μJ (off)

Collector Emitter Voltage (VCEO)

1.85V

Max Collector Current

32A

Reverse Recovery Time

68 ns

Vce(on) (Max) @ Vge, Ic

1.85V @ 15V, 12A

Gate Charge

25nC

Current - Collector Pulsed (Icm)

36A

Power - Max

140W

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

16.51mm

Length

10.67mm

Width

4.83mm

REACH SVHC

No SVHC

Polarity/Channel Type

N-CHANNEL

RoHS Status

ROHS3 Compliant

Infineon Technologies IRGB4640DPBF

In stock

SKU: IRGB4640DPBF-9
Manufacturer

Infineon Technologies

Factory Lead Time

18 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

250W

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

65A

Reverse Recovery Time

89 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 24A

Gate Charge

75nC

Current - Collector Pulsed (Icm)

72A

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

RoHS Status

RoHS Compliant