Showing 1117–1128 of 3680 results

Transistors - IGBTs - Single

Infineon Technologies IRGIB6B60KDPBF

In stock

SKU: IRGIB6B60KDPBF-9
Manufacturer

Infineon Technologies

Published

2004

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

13A

Element Configuration

Single

Power Dissipation

38W

Case Connection

ISOLATED

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

22A

Rise Time

17ns

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

11A

Reverse Recovery Time

70 ns

JEDEC-95 Code

TO-220AB

Turn On Time

45 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Turn Off Time-Nom (toff)

258 ns

IGBT Type

NPT

Gate Charge

18.2nC

Td (on/off) @ 25°C

25ns/215ns

Switching Energy

110μJ (on), 135μJ (off)

Transistor Application

MOTOR CONTROL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

27ns

Height

16.002mm

Length

10.5918mm

Width

4.8006mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free

Infineon Technologies IRGIB6B60KDPBF-INF

In stock

SKU: IRGIB6B60KDPBF-INF-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO220 Full Pack

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Operating Temperature

-55°C ~ 175°C (TJ)

Input Type

Standard

Power - Max

38 W

Voltage - Collector Emitter Breakdown (Max)

600 V

Current - Collector (Ic) (Max)

11 A

Test Condition

480V, 16A, 23Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 5A

Gate Charge

18.2 nC

Current - Collector Pulsed (Icm)

22 A

Td (on/off) @ 25°C

60ns/160ns

Switching Energy

600μJ (on), 580μJ (off)

Reverse Recovery Time (trr)

91 ns

Infineon Technologies IRGIB7B60KDPBF

In stock

SKU: IRGIB7B60KDPBF-9
Manufacturer

Infineon Technologies

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 8A, 50 Ω, 15V

Turn Off Delay Time

140 ns

Operating Temperature

-55°C~175°C TJ

Published

2004

Part Status

Obsolete

Packaging

Tube

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

39W

Current Rating

12A

Element Configuration

Single

Power Dissipation

39W

Case Connection

ISOLATED

Mount

Through Hole

Factory Lead Time

16 Weeks

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

23ns/140ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.2V

Max Collector Current

12A

Reverse Recovery Time

95 ns

JEDEC-95 Code

TO-220AB

Turn On Time

43 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 8A

Turn Off Time-Nom (toff)

220 ns

IGBT Type

NPT

Gate Charge

29nC

Transistor Application

MOTOR CONTROL

Turn On Delay Time

23 ns

Switching Energy

160μJ (on), 160μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

56ns

Height

16.12mm

Length

10.6172mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Rise Time

22ns

Lead Free

Lead Free

Infineon Technologies IRGP20B120U-EP

In stock

SKU: IRGP20B120U-EP-9
Manufacturer

Infineon Technologies

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Test Conditions

600V, 20A, 5 Ω, 15V

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

300W

Current Rating

40A

Mount

Through Hole

Factory Lead Time

14 Weeks

Turn Off Time-Nom (toff)

228 ns

IGBT Type

NPT

Rise Time

30ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

4.85V

Max Collector Current

40A

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

70 ns

Vce(on) (Max) @ Vge, Ic

4.85V @ 15V, 40A

Input Type

Standard

Power Dissipation

300W

Gate Charge

169nC

Current - Collector Pulsed (Icm)

120A

Switching Energy

850μJ (on), 425μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRGP20B60PDPBF

In stock

SKU: IRGP20B60PDPBF-9
Manufacturer

Infineon Technologies

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 13A, 10 Ω, 15V

Turn Off Delay Time

115 ns

Operating Temperature

-55°C~150°C TJ

Published

2003

Part Status

Last Time Buy

Packaging

Bulk

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

220W

Current Rating

40A

Element Configuration

Single

Power Dissipation

220W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

20ns/115ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

40A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

25 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 20A

Turn Off Time-Nom (toff)

138 ns

IGBT Type

NPT

Gate Charge

68nC

Transistor Application

POWER CONTROL

Turn On Delay Time

20 ns

Switching Energy

95μJ (on), 100μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

17ns

Height

20.3mm

Length

15.9mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

5ns

Lead Free

Lead Free

Infineon Technologies IRGP30B120KD-EP

In stock

SKU: IRGP30B120KD-EP-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AD

Collector-Emitter Breakdown Voltage

1.2kV

Current-Collector (Ic) (Max)

60A

Test Conditions

600V, 25A, 5Ohm, 15V

Current Rating

60A

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

1.2kV

Max Power Dissipation

300W

Turn Off Delay Time

210 ns

Element Configuration

Single

IGBT Type

NPT

Gate Charge

169nC

Turn On Delay Time

50 ns

Power - Max

300W

Rise Time

25ns

Collector Emitter Voltage (VCEO)

4V

Max Collector Current

60A

Reverse Recovery Time

300 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 60A

Power Dissipation

300W

Input Type

Standard

Current - Collector Pulsed (Icm)

120A

Switching Energy

1.07mJ (on), 1.49mJ (off)

Height

18.7mm

Length

15.6972mm

Width

5.1mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRGP30B120KD-EP-INF

In stock

SKU: IRGP30B120KD-EP-INF-9
Manufacturer

Infineon Technologies

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Series

*

Infineon Technologies IRGP30B120KDPBF

In stock

SKU: IRGP30B120KDPBF-9
Manufacturer

Infineon Technologies

Max Power Dissipation

300W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 5Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Current-Collector (Ic) (Max)

60A

Packaging

Bulk

Published

1999

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Through Hole

Factory Lead Time

22 Weeks

IGBT Type

NPT

Gate Charge

169nC

Power - Max

300W

Collector Emitter Voltage (VCEO)

4V

Max Collector Current

60A

Reverse Recovery Time

300ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

4V @ 15V, 60A

Power Dissipation

300W

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Switching Energy

1.07mJ (on), 1.49mJ (off)

Height

20.701mm

Length

15.875mm

Width

5.3086mm

Radiation Hardening

No

Input Type

Standard

RoHS Status

RoHS Compliant

Infineon Technologies IRGP30B60KD-EP

In stock

SKU: IRGP30B60KD-EP-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10 Ω, 15V

Turn Off Delay Time

185 ns

Power Dissipation

304W

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

304W

Current Rating

60A

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

237 ns

IGBT Type

NPT

Transistor Application

MOTOR CONTROL

Rise Time

28ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.35V

Max Collector Current

60A

Reverse Recovery Time

125 ns

JEDEC-95 Code

TO-247AD

Turn On Time

74 ns

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 30A

Input Type

Standard

Turn On Delay Time

46 ns

Gate Charge

102nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

46ns/185ns

Switching Energy

350μJ (on), 825μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.5V

Fall Time-Max (tf)

42ns

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP35B60PDPBF

In stock

SKU: IRGP35B60PDPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 22A, 3.3 Ω, 15V

Turn Off Delay Time

110 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Factory Lead Time

14 Weeks

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

308W

Current Rating

60A

Element Configuration

Single

Power Dissipation

308W

Packaging

Bulk

Input Type

Standard

Gate Charge

160nC

Current - Collector Pulsed (Icm)

120A

Rise Time

6ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.55V

Max Collector Current

60A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

34 ns

Vce(on) (Max) @ Vge, Ic

2.55V @ 15V, 35A

Turn Off Time-Nom (toff)

142 ns

IGBT Type

NPT

Turn On Delay Time

26 ns

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

26ns/110ns

Switching Energy

220μJ (on), 215μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4050PBF

In stock

SKU: IRGP4050PBF-9
Manufacturer

Infineon Technologies

Test Conditions

180V, 30A, 5Ohm, 15V

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247AC

Collector-Emitter Breakdown Voltage

250V

Min Operating Temperature

-55°C

Factory Lead Time

13 Weeks

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Current-Collector (Ic) (Max)

104A

Voltage - Rated DC

250V

Max Collector Current

104A

Voltage - Collector Emitter Breakdown (Max)

250V

Element Configuration

Single

Power Dissipation

330W

Input Type

Standard

Power - Max

330W

Rise Time

35ns

Collector Emitter Voltage (VCEO)

1.9V

Max Power Dissipation

330W

Current Rating

104A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

Gate Charge

230nC

Current - Collector Pulsed (Icm)

208A

Td (on/off) @ 25°C

37ns/120ns

Switching Energy

45μJ (on), 125μJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4062-EPBF

In stock

SKU: IRGP4062-EPBF-9
Manufacturer

Infineon Technologies

Factory Lead Time

14 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2012

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

250W

Element Configuration

Single

Input Type

Standard

Power - Max

250W

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

IGBT Type

Trench

Gate Charge

75nC

Current - Collector Pulsed (Icm)

72A

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free