Showing 1129–1140 of 3680 results

Transistors - IGBTs - Single

Infineon Technologies IRGP4062D-EPBF

In stock

SKU: IRGP4062D-EPBF-9
Manufacturer

Infineon Technologies

Max Power Dissipation

250W

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Factory Lead Time

8 Weeks

Input Type

Standard

Element Configuration

Single

Power - Max

250W

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Reverse Recovery Time

89 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

IGBT Type

Trench

Gate Charge

75nC

Current - Collector Pulsed (Icm)

72A

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4062DPBF

In stock

SKU: IRGP4062DPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 24A, 10 Ω, 15V

Input Type

Standard

Factory Lead Time

26 Weeks

Packaging

Bulk

Published

2006

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

250W

Element Configuration

Single

Power Dissipation

250W

Case Connection

COLLECTOR

Turn Off Delay Time

104 ns

Turn On Delay Time

41 ns

Gate Charge

50nC

Current - Collector Pulsed (Icm)

72A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

48A

Reverse Recovery Time

89 ns

JEDEC-95 Code

TO-247AC

Turn On Time

64 ns

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 24A

Turn Off Time-Nom (toff)

164 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

22ns

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4063D1-EPBF

In stock

SKU: IRGP4063D1-EPBF-9
Manufacturer

Infineon Technologies

Published

2013

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 48A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Input Type

Standard

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

330W

Base Part Number

IRGP4063D

Element Configuration

Single

Packaging

Tube

Power - Max

330W

Switching Energy

1.4mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

20V

Max Collector Current

100A

Reverse Recovery Time

80 ns

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Gate Charge

150nC

Current - Collector Pulsed (Icm)

192A

Td (on/off) @ 25°C

60ns/160ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.14V

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4063D1PBF

In stock

SKU: IRGP4063D1PBF-9
Manufacturer

Infineon Technologies

Input Type

Standard

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 48A, 10 Ω, 15V

Packaging

Tube

Published

2013

Operating Temperature

-40°C~175°C TJ

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

330W

Base Part Number

IRGP4063D

Element Configuration

Single

Mounting Type

Through Hole

Mount

Through Hole

Switching Energy

1.4mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

20V

Max Collector Current

100A

Reverse Recovery Time

80 ns

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Gate Charge

150nC

Current - Collector Pulsed (Icm)

192A

Td (on/off) @ 25°C

60ns/160ns

Polarity/Channel Type

N-CHANNEL

Power - Max

330W

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Collector Emitter Voltage (VCEO)

2.14V

Lead Free

Lead Free

Infineon Technologies IRGP4063DPBF

In stock

SKU: IRGP4063DPBF-9
Manufacturer

Infineon Technologies

Published

2006

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 48A, 10 Ω, 15V

Turn Off Delay Time

145 ns

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Factory Lead Time

26 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

300V

Max Power Dissipation

330W

Current Rating

96A

Base Part Number

IRGP4063D

Element Configuration

Single

Power Dissipation

330W

Case Connection

COLLECTOR

Packaging

Tube

Turn On Delay Time

60 ns

Gate Charge

95nC

Current - Collector Pulsed (Icm)

144A

Drain to Source Voltage (Vdss)

300V

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.14V

Max Collector Current

96A

Reverse Recovery Time

115 ns

Continuous Drain Current (ID)

96A

JEDEC-95 Code

TO-247AC

Turn On Time

100 ns

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

Trench

Transistor Application

POWER CONTROL

Rise Time

56ns

Td (on/off) @ 25°C

60ns/145ns

Switching Energy

625μJ (on), 1.28mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

46ns

Height

20.3mm

Length

15.875mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4063PBF

In stock

SKU: IRGP4063PBF-9
Manufacturer

Infineon Technologies

Case Connection

COLLECTOR

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 48A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Turn Off Delay Time

165 ns

Published

2009

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

330W

Rise Time-Max

56ns

Element Configuration

Single

Power Dissipation

330W

Mount

Through Hole

Factory Lead Time

26 Weeks

Gate Charge

95nC

Current - Collector Pulsed (Icm)

144A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.14V

Max Collector Current

96A

JEDEC-95 Code

TO-247AC

Gate to Source Voltage (Vgs)

30V

Turn On Time

100 ns

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

Trench

Turn On Delay Time

55 ns

Input Type

Standard

Td (on/off) @ 25°C

60ns/145ns

Switching Energy

625μJ (on), 1.28mJ (off)

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

46ns

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

Transistor Application

POWER CONTROL

RoHS Status

ROHS3 Compliant

Infineon Technologies IRGP4066-EPBF

In stock

SKU: IRGP4066-EPBF-9
Manufacturer

Infineon Technologies

Published

2006

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

454W

Rise Time-Max

90ns

Element Configuration

Single

Power Dissipation

454W

Case Connection

COLLECTOR

Packaging

Tube

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

2.47mJ (on), 2.16mJ (off)

Max Collector Current

140A

JEDEC-95 Code

TO-247AD

Turn On Time

120 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench

Gate Charge

150nC

Current - Collector Pulsed (Icm)

225A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

80ns

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4066D-EPBF

In stock

SKU: IRGP4066D-EPBF-9
Manufacturer

Infineon Technologies

Operating Temperature

-55°C~175°C TJ

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 75A, 10 Ω, 15V

Input Type

Standard

Factory Lead Time

26 Weeks

Packaging

Tube

Published

2004

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

454W

Rise Time-Max

90ns

Element Configuration

Single

Case Connection

COLLECTOR

Turn Off Delay Time

200 ns

Turn On Delay Time

50 ns

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

50ns/200ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

140A

Reverse Recovery Time

155 ns

JEDEC-95 Code

TO-247AD

Turn On Time

120 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench

Gate Charge

150nC

Power - Max

454W

Transistor Application

POWER CONTROL

Switching Energy

2.47mJ (on), 2.16mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

80ns

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4066PBF

In stock

SKU: IRGP4066PBF-9
Manufacturer

Infineon Technologies

Published

2011

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

454W

Rise Time-Max

90ns

Element Configuration

Single

Power Dissipation

454W

Case Connection

COLLECTOR

Mount

Through Hole

Factory Lead Time

14 Weeks

Td (on/off) @ 25°C

50ns/200ns

Polarity/Channel Type

N-CHANNEL

Max Collector Current

140A

JEDEC-95 Code

TO-247AC

Turn On Time

120 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

310 ns

IGBT Type

Trench

Gate Charge

150nC

Current - Collector Pulsed (Icm)

225A

Switching Energy

2.47mJ (on), 2.16mJ (off)

Gate-Emitter Voltage-Max

20V

Transistor Application

POWER CONTROL

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

80ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Collector Emitter Voltage (VCEO)

2.1V

Lead Free

Lead Free

Infineon Technologies IRGP4068D-EPBF

In stock

SKU: IRGP4068D-EPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 48A, 10 Ω, 15V

Turn Off Delay Time

145 ns

Power Dissipation

330W

Factory Lead Time

16 Weeks

Published

2003

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

330W

Current Rating

48A

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

144A

Td (on/off) @ 25°C

-/145ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.14V

Max Collector Current

96A

JEDEC-95 Code

TO-247AD

Turn On Time

180 ns

Vce(on) (Max) @ Vge, Ic

2.14V @ 15V, 48A

Turn Off Time-Nom (toff)

210 ns

IGBT Type

Trench

Gate Charge

95nC

Input Type

Standard

Transistor Application

POWER CONTROL

Switching Energy

1.28mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.7mm

Length

15.87mm

Width

5.13mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4072DPBF

In stock

SKU: IRGP4072DPBF-9
Manufacturer

Infineon Technologies

Published

2007

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

300V

Number of Elements

1

Test Conditions

240V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

180W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Qualification Status

Not Qualified

Rise Time-Max

50ns

Mount

Through Hole

Factory Lead Time

14 Weeks

IGBT Type

Trench

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.7V

Max Collector Current

70A

Reverse Recovery Time

122 ns

JEDEC-95 Code

TO-247AC

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 40A

Turn Off Time-Nom (toff)

309 ns

Gate Charge

73nC

Current - Collector Pulsed (Icm)

120A

Power Dissipation

180W

Td (on/off) @ 25°C

18ns/144ns

Switching Energy

409μJ (on), 838μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

124ns

Height

20.701mm

Length

15.875mm

Width

5.3086mm

Transistor Application

POWER CONTROL

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4086PBF

In stock

SKU: IRGP4086PBF-9
Manufacturer

Infineon Technologies

Factory Lead Time

14 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Collector-Emitter Breakdown Voltage

300V

Test Conditions

196V, 25A, 10 Ω

Operating Temperature

-40°C~150°C TJ

Packaging

Tube

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

160W

Element Configuration

Single

Power Dissipation

160W

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.96V

Max Collector Current

70A

Vce(on) (Max) @ Vge, Ic

2.96V @ 15V, 120A

IGBT Type

Trench

Gate Charge

65nC

Td (on/off) @ 25°C

36ns/112ns

Gate-Emitter Thr Voltage-Max

5V

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant