Showing 1153–1164 of 3680 results

Transistors - IGBTs - Single

Infineon Technologies IRGP4640DPBF

In stock

SKU: IRGP4640DPBF-9
Manufacturer

Infineon Technologies

Published

2006

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 24A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Factory Lead Time

16 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

250W

Base Part Number

IRGP4640

Element Configuration

Single

Power Dissipation

125W

Packaging

Tube

Power - Max

250W

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Max Collector Current

65A

Reverse Recovery Time

89 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 24A

Gate Charge

75nC

Current - Collector Pulsed (Icm)

72A

Td (on/off) @ 25°C

41ns/104ns

Switching Energy

115μJ (on), 600μJ (off)

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.9V

Fall Time-Max (tf)

41ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4650D-EPBF

In stock

SKU: IRGP4650D-EPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 35A, 10 Ω, 15V

Power Dissipation

134W

Factory Lead Time

26 Weeks

Published

2004

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

268W

Rise Time-Max

42ns

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Td (on/off) @ 25°C

46ns/105ns

Switching Energy

390μJ (on), 632μJ (off)

Collector Emitter Voltage (VCEO)

1.9V

Max Collector Current

76A

Reverse Recovery Time

120 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 35A

Gate Charge

104nC

Current - Collector Pulsed (Icm)

105A

Power - Max

268W

Polarity/Channel Type

N-CHANNEL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

54ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Infineon Technologies IRGP4660DPBF

In stock

SKU: IRGP4660DPBF-9
Manufacturer

Infineon Technologies

Published

2007

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 48A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Factory Lead Time

26 Weeks

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

330W

Rise Time-Max

56ns

Element Configuration

Single

Power Dissipation

134W

Packaging

Tube

Power - Max

330W

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Max Collector Current

100A

Reverse Recovery Time

115 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 48A

Gate Charge

140nC

Current - Collector Pulsed (Icm)

144A

Td (on/off) @ 25°C

60ns/145ns

Switching Energy

625μJ (on), 1.28mJ (off)

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.9V

Fall Time-Max (tf)

46ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP4690D-EPBF

In stock

SKU: IRGP4690D-EPBF-9
Manufacturer

Infineon Technologies

Max Power Dissipation

454W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Mount

Through Hole

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

454W

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

140A

Reverse Recovery Time

155 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Gate Charge

150nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

2.47mJ (on), 2.16mJ (off)

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4690DPBF

In stock

SKU: IRGP4690DPBF-9
Manufacturer

Infineon Technologies

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2007

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

454W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Input Type

Standard

Element Configuration

Single

Power - Max

454W

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

140A

Reverse Recovery Time

155 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Gate Charge

150nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

2.47mJ (on), 2.16mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.31mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4760D-EPBF

In stock

SKU: IRGP4760D-EPBF-9
Manufacturer

Infineon Technologies

Factory Lead Time

20 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 48A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

325W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

325W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

90A

Reverse Recovery Time

170 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 48A

Gate Charge

145nC

Current - Collector Pulsed (Icm)

144A

Td (on/off) @ 25°C

70ns/140ns

Switching Energy

1.7mJ (on), 1mJ (off)

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4760DPBF

In stock

SKU: IRGP4760DPBF-9
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 48A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

325W

Factory Lead Time

20 Weeks

Element Configuration

Single

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

325W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

90A

Reverse Recovery Time

170 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 48A

Gate Charge

145nC

Current - Collector Pulsed (Icm)

144A

Td (on/off) @ 25°C

70ns/140ns

Switching Energy

1.7mJ (on), 1mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.31mm

RoHS Status

RoHS Compliant

Infineon Technologies IRGP4790DPBF

In stock

SKU: IRGP4790DPBF-9
Manufacturer

Infineon Technologies

Factory Lead Time

20 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 75A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

455W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

455W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

140A

Reverse Recovery Time

170 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Gate Charge

210nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

50ns/200ns

Switching Energy

2.5mJ (on), 2.2mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.31mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Infineon Technologies IRGP50B60PD1-EP

In stock

SKU: IRGP50B60PD1-EP-9
Manufacturer

Infineon Technologies

Published

2008

Mounting Type

Through Hole

Package / Case

TO-3P-3 Full Pack

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

75A

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Factory Lead Time

14 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

HIGH RELIABILITY

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Qualification Status

Not Qualified

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 50A

Input Type

Standard

Power - Max

390W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

42ns

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

390W

Rise Time-Max

20ns

Configuration

SINGLE WITH BUILT-IN DIODE

Turn Off Time-Nom (toff)

161 ns

IGBT Type

NPT

Gate Charge

205nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

30ns/130ns

Switching Energy

255μJ (on), 375μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

20ns

RoHS Status

RoHS Compliant

Infineon Technologies IRGP50B60PD1PBF

In stock

SKU: IRGP50B60PD1PBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

130 ns

Case Connection

COLLECTOR

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

390W

Current Rating

75A

Element Configuration

Single

Power Dissipation

390W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Gate Charge

205nC

Current - Collector Pulsed (Icm)

150A

Rise Time

10ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.85V

Max Collector Current

75A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 50A

Turn Off Time-Nom (toff)

161 ns

IGBT Type

NPT

Turn On Delay Time

30 ns

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

30ns/130ns

Switching Energy

255μJ (on), 375μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

20ns

Height

20.7mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRGP50B60PD1PBF-INF

In stock

SKU: IRGP50B60PD1PBF-INF-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

Maximum Operating Temperature

Infineon Technologies

Minimum Operating Temperature

Bulk

Package Type

Active

Configuration

Standard

Input Type

390 W

Operating Temperature Range

600 V

Voltage - Collector Emitter Breakdown (Max)

75 A

Current - Collector (Ic) (Max)

390V, 33A, 3.3Ohm, 15V

Test Condition

2.85V @ 15V, 50A

Continuous Collector Current

NPT

IGBT Type

205 nC

Gate Charge

150 A

Current - Collector Pulsed (Icm)

30ns/130ns

Td (on/off) @ 25°C

255μJ (on), 375μJ (off)

Switching Energy

42 ns

Infineon Technologies IRGP50B60PDPBF

In stock

SKU: IRGP50B60PDPBF-9
Manufacturer

Infineon Technologies

Packaging

Bulk

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

140 ns

Input Type

Standard

Factory Lead Time

14 Weeks

Published

2004

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

370W

Current Rating

75A

Element Configuration

Single

Power Dissipation

370W

Case Connection

COLLECTOR

Operating Temperature

-55°C~150°C TJ

Turn On Delay Time

33 ns

Gate Charge

240nC

Current - Collector Pulsed (Icm)

150A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

75A

Reverse Recovery Time

50 ns

JEDEC-95 Code

TO-247AC

Turn On Time

59 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 50A

Max Junction Temperature (Tj)

150°C

Continuous Collector Current

75A

Turn Off Time-Nom (toff)

190 ns

IGBT Type

NPT

Transistor Application

POWER CONTROL

Rise Time

26ns

Td (on/off) @ 25°C

34ns/130ns

Switching Energy

360μJ (on), 380μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

65ns

Height

24.99mm

Length

15.87mm

Width

5.3086mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free