Showing 157–168 of 1266 results
Harris Corporation 2N5362
In stock
| Manufacturer |
Harris Corporation |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package |
TO-72-4 |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Product Status |
Active |
| Power - Max |
300 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 15V |
| Drain to Source Voltage (Vdss) |
40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
4 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
2 V @ 100 nA |
| Voltage - Breakdown (V(BR)GSS) |
40 V |
Harris Corporation 3N187
In stock
| Manufacturer |
Harris Corporation |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package |
TO-72 |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 175°C (TJ) |
| Power - Max |
330 mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
8.5pF @ 15V |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
500 mV @ 50 μA |
| Voltage - Breakdown (V(BR)GSS) |
6.5 V |
Harris Corporation 3N206
In stock
| Manufacturer |
Harris Corporation |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package |
TO-72 |
| Mfr |
Harris Corporation |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-65°C ~ 175°C (TA) |
| Power - Max |
360 mW |
| FET Type |
2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds |
0.03pF @ 15V |
| Drain to Source Voltage (Vdss) |
25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
3 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id |
500 mV @ 20 μA |
| Voltage - Breakdown (V(BR)GSS) |
30 V |
| Resistance - RDS(On) |
17 mOhms |
Infineon ESD5V3L1B02LSE6327XTSA1
In stock
| Manufacturer |
Infineon Technologies AG |
|---|---|
| Terminal Form |
NO LEAD |
| Diode Element Material |
SILICON |
| Number of Terminals |
2 |
| Package Shape |
RECTANGULAR |
| ECCN Code |
EAR99 |
| HTS Code |
8541.10.00.50 |
| Technology |
AVALANCHE |
| Terminal Position |
BOTTOM |
| Surface Mount |
YES |
| Reach Compliance Code |
compliant |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| JESD-30 Code |
R-PBCC-N2 |
| Number of Elements |
1 |
| Polarity |
BIDIRECTIONAL |
| Configuration |
SINGLE |
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max |
5.3 V |
| Breakdown Voltage-Min |
6 V |
| Breakdown Voltage-Max |
10 V |
Infineon IGO60R070D1AUMA2
In stock
| Manufacturer |
Infineon |
|---|---|
| Package / Case |
PG-DSO-20 |
| Mounting Style |
SMD/SMT |
| Channel Mode |
Enhancement |
| Continuous Drain Current Id |
31A |
| Id - Continuous Drain Current |
31 A |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
125 W |
| Qg - Gate Charge |
5.8 nC |
| Rds On - Drain-Source Resistance |
70 mOhms |
| Transistor Polarity |
N-Channel |
| Vds - Drain-Source Breakdown Voltage |
800 V |
| Vgs - Gate-Source Voltage |
– 10 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage |
900 mV |
| Series |
CoolGaN 600V |
| Technology |
GaN |
| Number of Channels |
1 Channel |
| Channel Type |
N |