Showing 457–468 of 1266 results
Transistors - JFETs
Microsemi Corporation JANTX2N4859
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Pbfree Code |
no |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~200°C TJ |
Packaging |
Bulk |
Published |
2002 |
Terminal Form |
WIRE |
JESD-609 Code |
e0 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
HTS Code |
8541.21.00.95 |
Max Power Dissipation |
360mW |
Terminal Position |
BOTTOM |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Transistor Application |
SWITCHING |
Reach Compliance Code |
not_compliant |
Base Part Number |
2N4859 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Case Connection |
GATE |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V VGS |
Gate to Source Voltage (Vgs) |
-30V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Drain-source On Resistance-Max |
25Ohm |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
175mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
10V @ 500pA |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
25Ohm |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N4092
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-65°C~175°C TJ |
Packaging |
Bulk |
Published |
2007 |
Series |
Military, MIL-PRF-19500/431 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Pin Count |
3 |
Reference Standard |
MIL-19500 |
Number of Elements |
1 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
360mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 20V |
Gate to Source Voltage (Vgs) |
-40V |
Drain-source On Resistance-Max |
50Ohm |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
15mA @ 20V |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
50Ohm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N4856
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2007 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-65°C~200°C TJ |
Terminal Finish |
TIN LEAD |
Factory Lead Time |
30 Weeks |
Series |
Military, MIL-PRF-19500/385 |
JESD-609 Code |
e0 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Packaging |
Bulk |
HTS Code |
8541.21.00.95 |
Gate to Source Voltage (Vgs) |
-40V |
Drain-source On Resistance-Max |
25Ohm |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
360mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
175mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
10V @ 500pA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
25Ohm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N4857
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Terminal Position |
BOTTOM |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~200°C TJ |
Published |
2007 |
JESD-609 Code |
e0 |
Packaging |
Bulk |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN LEAD |
HTS Code |
8541.21.00.95 |
Mount |
Through Hole |
Factory Lead Time |
32 Weeks |
Gate to Source Voltage (Vgs) |
-40V |
Drain-source On Resistance-Max |
40Ohm |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
360mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
WIRE |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
100mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
6V @ 500pA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
40Ohm |
RoHS Status |
Non-RoHS Compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Lead Free |
Contains Lead |
Microsemi Corporation MV2N4858
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2007 |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~200°C TJ |
Terminal Finish |
TIN LEAD |
Packaging |
Bulk |
Series |
Military, MIL-PRF-19500/385 |
JESD-609 Code |
e0 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Mount |
Through Hole |
Factory Lead Time |
32 Weeks |
Gate to Source Voltage (Vgs) |
-40V |
Terminal Position |
BOTTOM |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
360mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
Drain-source On Resistance-Max |
60Ohm |
FET Technology |
JUNCTION |
HTS Code |
8541.21.00.95 |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
4V @ 0.5nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
60Ohm |
Radiation Hardening |
No |
Terminal Form |
WIRE |
RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N4859
In stock
Manufacturer |
Microsemi Corporation |
---|---|
Published |
2007 |
Mounting Type |
Through Hole |
Package / Case |
TO-206AA, TO-18-3 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~200°C TJ |
Terminal Finish |
TIN LEAD |
Mount |
Through Hole |
Series |
Military, MIL-PRF-19500/385 |
JESD-609 Code |
e0 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Packaging |
Bulk |
HTS Code |
8541.21.00.95 |
Gate to Source Voltage (Vgs) |
-30V |
Drain-source On Resistance-Max |
25Ohm |
Pin Count |
3 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
360mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
8 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
175mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
10V @ 500pA |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
25Ohm |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |