Showing 469–480 of 1266 results
Microsemi Corporation MV2N4860
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Published |
2007 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
-65°C~200°C TJ |
| Terminal Finish |
TIN LEAD |
| Mount |
Through Hole |
| Series |
Military, MIL-PRF-19500/385 |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Packaging |
Bulk |
| HTS Code |
8541.21.00.95 |
| Gate to Source Voltage (Vgs) |
-30V |
| Drain-source On Resistance-Max |
40Ohm |
| Pin Count |
3 |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
360mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
100mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
6V @ 500pA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
40Ohm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N4861
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Series |
Military, MIL-PRF-19500/385 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-65°C~200°C TJ |
| Packaging |
Bulk |
| HTS Code |
8541.21.00.95 |
| Published |
2007 |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Gate to Source Voltage (Vgs) |
-30V |
| Terminal Form |
WIRE |
| Number of Elements |
1 |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
360mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
| Drain-source On Resistance-Max |
60Ohm |
| FET Technology |
JUNCTION |
| Terminal Position |
BOTTOM |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
4V @ 0.5nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
60Ohm |
| Radiation Hardening |
No |
| Pin Count |
3 |
| RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MV2N5116
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Operating Temperature |
-65°C~200°C TJ |
| Packaging |
Bulk |
| Series |
Military, MIL-PRF-19500 |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
TIN LEAD |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Pin Count |
3 |
| Element Configuration |
Single |
| Power - Max |
500mW |
| FET Type |
P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
27pF @ 15V |
| Gate to Source Voltage (Vgs) |
30V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
25mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
6V @ 1nA |
| Resistance - RDS(On) |
100Ohm |
| Radiation Hardening |
No |
| RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MX2N4856
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| HTS Code |
8541.21.00.95 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
-65°C~200°C TJ |
| Published |
2007 |
| Series |
Military, MIL-PRF-19500/385 |
| Packaging |
Bulk |
| JESD-609 Code |
e0 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Mount |
Through Hole |
| Factory Lead Time |
30 Weeks |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
| Gate to Source Voltage (Vgs) |
-40V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
360mW |
| FET Type |
N-Channel |
| Terminal Form |
WIRE |
| Terminal Position |
BOTTOM |
| Drain-source On Resistance-Max |
25Ohm |
| FET Technology |
JUNCTION |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
175mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
4V @ 0.5nA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Resistance - RDS(On) |
25Ohm |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MX2N4857
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| HTS Code |
8541.21.00.95 |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-65°C~200°C TJ |
| Packaging |
Bulk |
| Series |
Military, MIL-PRF-19500/385 |
| JESD-609 Code |
e0 |
| Published |
2007 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain-source On Resistance-Max |
40Ohm |
| FET Technology |
JUNCTION |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
360mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
| Gate to Source Voltage (Vgs) |
-40V |
| Terminal Form |
WIRE |
| Terminal Position |
BOTTOM |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
100mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
6V @ 500pA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Resistance - RDS(On) |
40Ohm |
| Radiation Hardening |
No |
| Pin Count |
3 |
| RoHS Status |
Non-RoHS Compliant |
Microsemi Corporation MX2N4859
In stock
| Manufacturer |
Microsemi Corporation |
|---|---|
| HTS Code |
8541.21.00.95 |
| Package / Case |
TO-206AA, TO-18-3 Metal Can |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
-65°C~200°C TJ |
| Packaging |
Bulk |
| Series |
Military, MIL-PRF-19500/385 |
| JESD-609 Code |
e0 |
| Published |
2007 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
TIN LEAD |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Drain-source On Resistance-Max |
25Ohm |
| FET Technology |
JUNCTION |
| Element Configuration |
Single |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
360mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
18pF @ 10V |
| Gate to Source Voltage (Vgs) |
-30V |
| Terminal Form |
WIRE |
| Terminal Position |
BOTTOM |
| Feedback Cap-Max (Crss) |
8 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
175mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
10V @ 500pA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
25Ohm |
| Radiation Hardening |
No |
| Pin Count |
3 |
| RoHS Status |
Non-RoHS Compliant |