Showing 505–516 of 1266 results

Transistors - JFETs

NTE Electronics, Inc NTE460

In stock

SKU: NTE460-9
Manufacturer

NTE Electronics

Mounting Type

Through Hole

Package / Case

TO-206AF, TO-72-4 Metal Can

Supplier Device Package

TO-72

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

Power - Max

300 mW

FET Type

P-Channel

Input Capacitance (Ciss) (Max) @ Vds

20pF @ 10V

Current - Drain (Idss) @ Vds (Vgs=0)

2 mA @ 10 V

Voltage - Breakdown (V(BR)GSS)

20 V

Resistance - RDS(On)

800 Ohms

NTE Electronics, Inc NTE461

In stock

SKU: NTE461-9
Manufacturer

NTE Electronics

Operating Temperature Classification

Military

Mounting Type

Through Hole

Package / Case

TO-71-6 Metal Can

Surface Mount

NO

Number of Pins

6

Supplier Device Package

TO-71

Weight

4.535924 g

Number of Terminals

6

Transistor Element Material

SILICON

Gate-Source Voltage (Max)

-50(V)

Mfr

NTE Electronics, Inc

Reach Compliance Code

unknown

Mount

Through Hole

Package

Bag

Package Shape

ROUND

Package Type

TO-71

Product Status

Active

Rad Hardened

No

Max Operating Temperature

200 °C

Min Operating Temperature

-65 °C

HTS Code

8541.21.00.95

Terminal Position

BOTTOM

Terminal Form

WIRE

Mounting

Through Hole

Pin Count

6

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-71

Operating Temperature (Max)

200C

Operating Temperature (Min)

-65C

Number of Elements

2

Configuration

Dual

Element Configuration

Dual

Operating Mode

DEPLETION MODE

FET Type

2 N-Channel (Dual)

Transistor Application

AMPLIFIER

Input Capacitance (Ciss) (Max) @ Vds

6pF @ 15V

Drain to Source Voltage (Vdss)

50 V

JESD-30 Code

O-MBCY-W6

Qualification Status

Not Qualified

Gate to Source Voltage (Vgs)

-50 V

Channel Type

N

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25 W

Feedback Cap-Max (Crss)

2 pF

Current - Drain (Idss) @ Vds (Vgs=0)

500 μA @ 15 V

Voltage - Cutoff (VGS off) @ Id

500 mV @ 500 pA

Voltage - Breakdown (V(BR)GSS)

50 V

Height

6.35 mm

Length

165.1 mm

Width

95.25 mm

NTE Electronics, Inc NTE466

In stock

SKU: NTE466-9
Manufacturer

NTE Electronics

JESD-30 Code

O-MBCY-W3

Surface Mount

NO

Supplier Device Package

TO-218

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

ECCN Code

EAR99

Package Shape

ROUND

HTS Code

8541.21.00.95

Subcategory

Other Transistors

Terminal Position

BOTTOM

Terminal Form

WIRE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

unknown

Pin Count

3

Package / Case

TO-218-3

Mounting Type

Through Hole

JEDEC-95 Code

TO-18

Drain-source On Resistance-Max

25 Ω

Operating Mode

DEPLETION MODE

Power - Max

360 mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

18pF @ 10V

Drain to Source Voltage (Vdss)

40 V

Polarity/Channel Type

N-CHANNEL

Number of Elements

1

Qualification Status

Not Qualified

DS Breakdown Voltage-Min

40 V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.36 W

Feedback Cap-Max (Crss)

0.8 pF

Current - Drain (Idss) @ Vds (Vgs=0)

50 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id

4 V @ 500 pA

Voltage - Breakdown (V(BR)GSS)

40 V

Configuration

SINGLE

Resistance - RDS(On)

25 Ohms

NTE Electronics, Inc NTE467

In stock

SKU: NTE467-9
Manufacturer

NTE Electronics

Product Status

Active

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount

NO

Supplier Device Package

TO-92

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Package

Bag

Pin Count

3

Mounting Type

Through Hole

Operating Temperature

-65°C ~ 150°C (TJ)

ECCN Code

EAR99

HTS Code

8541.21.00.95

Subcategory

Other Transistors

Terminal Position

BOTTOM

Terminal Form

WIRE

Reach Compliance Code

unknown

Package Shape

ROUND

JESD-30 Code

O-PBCY-W3

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-92

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

310 mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V

Drain to Source Voltage (Vdss)

30 V

Qualification Status

Not Qualified

Number of Elements

1

Drain-source On Resistance-Max

30 Ω

DS Breakdown Voltage-Min

30 V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.31 W

Feedback Cap-Max (Crss)

4 pF

Current - Drain (Idss) @ Vds (Vgs=0)

50 mA @ 20 V

Voltage - Breakdown (V(BR)GSS)

30 V

Resistance - RDS(On)

30 Ohms

NTE Electronics, Inc NTE469

In stock

SKU: NTE469-9
Manufacturer

NTE Electronics

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Power - Max

625 mW

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Drain to Source Voltage (Vdss)

35 V

Current - Drain (Idss) @ Vds (Vgs=0)

2 mA @ 15 V

Voltage - Breakdown (V(BR)GSS)

35 V

Resistance - RDS(On)

100 Ohms

NTE Electronics, Inc NTE489

In stock

SKU: NTE489-9
Manufacturer

NTE Electronics

Terminal Position

BOTTOM

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount

NO

Supplier Device Package

TO-92

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Number of Elements

1

Package

Bag

Package Shape

ROUND

Product Status

Active

Operating Temperature

-55°C ~ 135°C (TJ)

HTS Code

8541.21.00.95

Subcategory

Other Transistors

Mounting Type

Through Hole

Reach Compliance Code

unknown

Terminal Form

WIRE

JESD-30 Code

O-PBCY-W3

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

360 mW

FET Type

P-Channel

Transistor Application

AMPLIFIER

Input Capacitance (Ciss) (Max) @ Vds

32pF @ 15V

Polarity/Channel Type

P-CHANNEL

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.36 W

Current - Drain (Idss) @ Vds (Vgs=0)

2 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id

500 mV @ 1 nA

Voltage - Breakdown (V(BR)GSS)

30 V

NTE Electronics, Inc. J204

In stock

SKU: J204-9
Manufacturer

NTE Electronics, Inc.

Surface Mount

NO

Number of Terminals

3

Transistor Element Material

SILICON

Package Shape

ROUND

HTS Code

8541.21.00.95

Terminal Position

BOTTOM

Terminal Form

THROUGH-HOLE

Reach Compliance Code

unknown

JESD-30 Code

O-PBCY-T3

Qualification Status

Not Qualified

Number of Elements

1

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-226AA

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.36 W

NTE Electronics, Inc. NTE133

In stock

SKU: NTE133-9
Manufacturer

NTE Electronics

Package Shape

ROUND

Mounting Type

Through Hole

Package / Case

TO-106-3 Domed

Surface Mount

NO

Number of Pins

3

Supplier Device Package

TO-106

Weight

4.535924 g

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

NTE Electronics, Inc

Number of Elements

1

Pin Count

3

Mount

Through Hole

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

ECCN Code

EAR99

Max Operating Temperature

150 °C

Min Operating Temperature

-55 °C

HTS Code

8541.21.00.95

Subcategory

Other Transistors

Max Power Dissipation

300 mW

Terminal Position

BOTTOM

Terminal Form

WIRE

Reach Compliance Code

unknown

Package

Bag

JESD-30 Code

O-PBCY-W3

JEDEC-95 Code

TO-106

Gate to Source Voltage (Vgs)

-25 V

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

300 mW

Power - Max

300 mW

FET Type

N-Channel

Transistor Application

AMPLIFIER

Breakdown Voltage

-25 V

Drain to Source Voltage (Vdss)

25 V

Polarity/Channel Type

N-CHANNEL

Continuous Drain Current (ID)

500 µA

Qualification Status

Not Qualified

Configuration

SINGLE

Drain to Source Breakdown Voltage

-6.5 V

DS Breakdown Voltage-Min

25 V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3 W

Feedback Cap-Max (Crss)

2 pF

Current - Drain (Idss) @ Vds (Vgs=0)

500 µA @ 15 V

Voltage - Cutoff (VGS off) @ Id

6.5 V @ 1 nA

Voltage - Breakdown (V(BR)GSS)

25 V

Height

4.572 mm

Length

88.9 mm

Width

5.2832 mm

REACH SVHC

Unknown

NTE Electronics, Inc. NTE458

In stock

SKU: NTE458-9
Manufacturer

NTE Electronics

Terminal Position

BOTTOM

Number of Terminals

3

Transistor Element Material

SILICON

Continuous Drain Current

0.02(A)

Gate-Source Voltage (Max)

-50(V)

Mounting

Through Hole

Operating Temperature Classification

Military

Package Shape

ROUND

Package Type

TO-92

Rad Hardened

No

ECCN Code

EAR99

Additional Feature

LOW NOISE

HTS Code

8541.21.00.95

Subcategory

Other Transistors

Surface Mount

NO

Reach Compliance Code

unknown

Terminal Form

WIRE

Pin Count

3

JESD-30 Code

O-PBCY-W3

Qualification Status

Not Qualified

Operating Temperature (Max)

125C

Operating Temperature (Min)

-55C

Number of Elements

1

Configuration

Single

Operating Mode

DEPLETION MODE

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-92

Channel Type

N

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25 W

NTE Electronics, Inc. NTE468

In stock

SKU: NTE468-9
Manufacturer

NTE Electronics

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92

Mfr

NTE Electronics, Inc

Package

Bag

Product Status

Active

Operating Temperature

-55°C ~ 150°C (TJ)

Power - Max

625 mW

FET Type

N-Channel

Drain to Source Voltage (Vdss)

35 V

Current - Drain (Idss) @ Vds (Vgs=0)

20 mA @ 15 V

Voltage - Cutoff (VGS off) @ Id

3 V @ 1 A

Voltage - Breakdown (V(BR)GSS)

35 V

Resistance - RDS(On)

30 Ohms

NTE Electronics, Inc. NTE6402

In stock

SKU: NTE6402-9
Manufacturer

NTE Electronics

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Surface Mount

NO

Ihs Manufacturer

NTE ELECTRONICS INC

Manufacturer Part Number

NTE6402

Mfr

NTE Electronics, Inc

Package

Bag

Part Life Cycle Code

Active

Power Dissipation (Max)

300 mW

Product Status

Active

Risk Rank

2.1

ECCN Code

EAR99

Reach Compliance Code

unknown

Voltage

40V

Voltage - Output

6V

Trigger Device Type

PROGRAMMABLE UJT

On-State Voltage-Max

1.6 V

Current - Peak

2 µA

Current - Valley (Iv)

50 µA

Current - Gate to Anode Leakage (Igao)

10 nA

Voltage - Offset (Vt)

1.6 V

NXP BF510

In stock

SKU: BF510-9
Manufacturer

Philips Semiconductors

Type

MHz Crystal

Surface Mount

YES

Supplier Device Package

TO-236AB

Height - Seated (Max)

0.026 (0.65mm)

Ihs Manufacturer

PHILIPS SEMICONDUCTORS

Manufacturer Part Number

BF510

Mfr

Suntsu Electronics, Inc.

Package

Bulk

Package Description

,

Operating Temperature-Max

150 °C

Part Life Cycle Code

Transferred

Product Status

Active

Risk Rank

5.57

Rohs Code

Yes

Operating Temperature

-10°C ~ 70°C

Series

SXT224

JESD-609 Code

e3

Package / Case

4-SMD, No Lead

Mounting Type

Surface Mount

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Frequency

30 MHz

Frequency Stability

±25ppm

ESR (Equivalent Series Resistance)

60 Ohms

Load Capacitance

18pF

Operating Mode

Fundamental

Frequency Tolerance

±15ppm

Power - Max

250 mW

Subcategory

Other Transistors

Terminal Finish

Matte Tin (Sn)

Drain to Source Voltage (Vdss)

20 V

Polarity/Channel Type

N-CHANNEL

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25 W

Current - Drain (Idss) @ Vds (Vgs=0)

3 mA @ 10 V

Voltage - Cutoff (VGS off) @ Id

800 mV @ 10 µA

Voltage - Breakdown (V(BR)GSS)

20 V

Reach Compliance Code

unknown

Current Drain (Id) - Max

30 mA