Showing 517–528 of 1266 results
Transistors - JFETs
NXP Semiconductors BSR56,215-RP100*3902397
In stock
Manufacturer |
NXP Semiconductors |
---|---|
Minimum Operating Temperature (°C) |
-65 |
Automotive |
No |
ECCN (US) |
EAR99 |
Lead Shape |
Gull-wing |
Maximum Continuous Drain Current (mA) |
50 |
Maximum Drain Gate Voltage (V) |
40 |
Maximum Drain Source Voltage (V) |
40 |
Maximum Gate Source Voltage (V) |
-40 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
250 |
Military |
No |
Material |
Si |
Package Height |
1(Max) |
Mounting |
Surface Mount |
Package Length |
3(Max) |
Package Width |
1.4(Max) |
PCB changed |
3 |
Standard Package Name |
SOT-23 |
Supplier Package |
TO-236AB |
Packaging |
Tape and Reel |
Part Status |
Obsolete |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
RoHS Compliant |
NXP USA Inc. BF545B
In stock
Manufacturer |
NXP Semiconductors |
---|---|
Surface Mount |
YES |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Package Shape |
RECTANGULAR |
JESD-609 Code |
e3 |
Pbfree Code |
Yes |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Subcategory |
Other Transistors |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
compliant |
Pin Count |
3 |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Transistor Application |
SWITCHING |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-236AB |
DS Breakdown Voltage-Min |
30 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Highest Frequency Band |
VERY HIGH FREQUENCY BAND |
NXP USA Inc. BFR30,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Published |
1997 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Factory Lead Time |
8 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
4pF @ 10V |
Drain to Source Voltage (Vdss) |
25V |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Base Part Number |
BFR30 |
Time@Peak Reflow Temperature-Max (s) |
40 |
DS Breakdown Voltage-Min |
25V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Feedback Cap-Max (Crss) |
1.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
4mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
5V @ 0.5nA |
Current Drain (Id) - Max |
10mA |
Pin Count |
3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. BFR30,235
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Base Part Number |
BFR30 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
8 Weeks |
Power - Max |
250mW |
Pin Count |
3 |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
4pF @ 10V |
Drain to Source Voltage (Vdss) |
25V |
Source Url Status Check Date |
2013-06-14 00:00:00 |
Current - Drain (Idss) @ Vds (Vgs=0) |
4mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
5V @ 0.5nA |
Current Drain (Id) - Max |
10mA |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. BFR31,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Published |
1997 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Mounting Type |
Surface Mount |
Factory Lead Time |
8 Weeks |
Input Capacitance (Ciss) (Max) @ Vds |
4pF @ 10V |
Drain to Source Voltage (Vdss) |
25V |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Base Part Number |
BFR31 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
DS Breakdown Voltage-Min |
25V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Feedback Cap-Max (Crss) |
1.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
2.5V @ 0.5nA |
Current Drain (Id) - Max |
10mA |
Pin Count |
3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. BFR31,235
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Factory Lead Time |
8 Weeks |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Tin (Sn) |
Base Part Number |
BFR31 |
Pin Count |
3 |
Power - Max |
250mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
4pF @ 10V |
Drain to Source Voltage (Vdss) |
25V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Source Url Status Check Date |
2013-06-14 00:00:00 |
Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
2.5V @ 0.5nA |
Current Drain (Id) - Max |
10mA |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. BFT46
In stock
Manufacturer |
Philips Semiconductors |
---|---|
Reach Compliance Code |
unknown |
Surface Mount |
YES |
Number of Pins |
3 |
Packaging |
Cut Tape |
JESD-609 Code |
e3 |
Terminal Finish |
Matte Tin (Sn) |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-65 °C |
Subcategory |
Other Transistors |
Mount |
Surface Mount |
Power Dissipation |
250 mW |
Element Configuration |
Single |
Polarity/Channel Type |
N-CHANNEL |
Continuous Drain Current (ID) |
10 mA |
Gate to Source Voltage (Vgs) |
2 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Height |
1 mm |
Length |
3 mm |
Width |
1.4 mm |
REACH SVHC |
No SVHC |
NXP USA Inc. BFT46,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Terminal Form |
260 |
Mounting Type |
TO-236-3, SC-59, SOT-23-3 |
Package / Case |
YES |
Weight |
SILICON |
Mfr |
1 |
Product Status |
150°C TJ |
Operating Temperature |
Tape & Reel (TR) |
Series |
e3 |
Pbfree Code |
Obsolete |
Packaging |
1997 |
Part Status |
1 (Unlimited) |
Moisture Sensitivity Level (MSL) |
3 |
Termination |
EAR99 |
Type |
Tin (Sn) |
Additional Feature |
8541.21.00.95 |
Max Power Dissipation |
DUAL |
Terminal Position |
GULL WING |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Transistor Application |
5pF @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
25V |
Pin Count |
R-PDSO-G3 |
JESD-30 Code |
Not Qualified |
Qualification Status |
SINGLE |
Element Configuration |
DEPLETION MODE |
Power Dissipation |
250mW |
Power - Max |
N-Channel |
FET Type |
AMPLIFIER |
Time@Peak Reflow Temperature-Max (s) |
BFT46 |
Current Rating |
40 |
Input Capacitance |
25V |
DS Breakdown Voltage-Min |
JUNCTION |
FET Technology |
0.25W |
Drain to Source Resistance |
1.5 pF |
Highest Frequency Band |
200μA @ 10V |
Current - Drain (Idss) @ Vds (Vgs=0) |
1.2V @ 0.5nA |
Power Gain-Min (Gp) |
10mA |
Base Part Number |
3 |
REACH SVHC |
ROHS3 Compliant |
NXP USA Inc. BSR56,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain-source On Resistance-Max |
25Ohm |
Pin Count |
3 |
Base Part Number |
BSR56 |
Power Dissipation-Max (Abs) |
0.3W |
Feedback Cap-Max (Crss) |
5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
50mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
4V @ 0.5nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
25Ohm |
Current Drain (Id) - Max |
20mA |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. BSR58,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
Drain-source On Resistance-Max |
60Ohm |
DS Breakdown Voltage-Min |
40V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain Current-Max (Abs) (ID) |
0.005A |
Pin Count |
3 |
Base Part Number |
BSR58 |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.225W |
Feedback Cap-Max (Crss) |
5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
8mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
800mV @ 0.5nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
60Ohm |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. CLF1G0035-100,112
In stock
Manufacturer |
Ampleon |
---|---|
Package / Case |
SOT-467C |
Surface Mount |
YES |
Supplier Device Package |
SOT467C |
Number of Terminals |
2 |
Transistor Element Material |
GALLIUM NITRIDE |
Mfr |
NXP USA Inc. |
Number of Elements |
1 |
Package |
Bulk |
Package Shape |
RECTANGULAR |
Product Status |
Active |
ECCN Code |
EAR99 |
Voltage - Rated |
150 V |
Terminal Position |
DUAL |
Terminal Form |
FLAT |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
Frequency |
3GHz |
Reference Standard |
IEC-60134 |
JESD-30 Code |
R-CDFM-F2 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Case Connection |
SOURCE |
Current - Test |
330 mA |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
N-CHANNEL |
Transistor Type |
GaN HEMT |
Gain |
12dB |
DS Breakdown Voltage-Min |
150 V |
Power - Output |
100W |
FET Technology |
HIGH ELECTRON MOBILITY |
Voltage - Test |
50 V |
Highest Frequency Band |
S BAND |