Showing 529–540 of 1266 results
NXP USA Inc. J108,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Mounting Type |
Through Hole |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1996 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
J108 |
| Power - Max |
400mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 0V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 5V |
| Voltage - Cutoff (VGS off) @ Id |
10V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
8Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J109,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Number of Terminations |
3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1996 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Base Part Number |
J109 |
| Mounting Type |
Through Hole |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pin Count |
3 |
| DS Breakdown Voltage-Min |
25V |
| FET Technology |
JUNCTION |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
400mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V VGS |
| Drain-source On Resistance-Max |
12Ohm |
| JESD-30 Code |
O-PBCY-T3 |
| Qualification Status |
Not Qualified |
| Power Dissipation-Max (Abs) |
0.4W |
| Feedback Cap-Max (Crss) |
15 pF |
| Source Url Status Check Date |
2013-06-14 00:00:00 |
| Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
2V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
12Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J110,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Mounting Type |
Through Hole |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1996 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
J110 |
| Power - Max |
400mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 0V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
10mA @ 5V |
| Voltage - Cutoff (VGS off) @ Id |
4V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
18Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J111,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Mounting Type |
Through Hole |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1997 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
J111 |
| Power - Max |
400mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 10V VGS |
| Current - Drain (Idss) @ Vds (Vgs=0) |
20mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
10V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Resistance - RDS(On) |
30Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J113,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Part Status |
Obsolete |
| Base Part Number |
J113 |
| Drain-source On Resistance-Max |
100Ohm |
| DS Breakdown Voltage-Min |
40V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
400mW |
| FET Type |
N-Channel |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 10V VGS |
| Pin Count |
3 |
| JESD-30 Code |
O-PBCY-T3 |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.4W |
| Source Url Status Check Date |
2013-06-14 00:00:00 |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
500mV @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
40V |
| Resistance - RDS(On) |
100Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J174,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Base Part Number |
J174 |
| Supplier Device Package |
TO-92 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1997 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| FET Type |
P-Channel |
| Power - Max |
400mW |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
20mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
5V @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
85Ohms |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J175,116
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Number of Terminations |
3 |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Terminal Form |
WIRE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Surface Mount |
NO |
| Mounting Type |
Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
400mW |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Drain-source On Resistance-Max |
125Ohm |
| DS Breakdown Voltage-Min |
30V |
| Base Part Number |
J175 |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.4W |
| Current - Drain (Idss) @ Vds (Vgs=0) |
7mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
125Ohm |
| JESD-30 Code |
O-PBCY-W3 |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. J176,126
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Number of Elements |
1 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Box (TB) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
BOTTOM |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Part Status |
Obsolete |
| Base Part Number |
J176 |
| Drain-source On Resistance-Max |
250Ohm |
| DS Breakdown Voltage-Min |
30V |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
400mW |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
| Pin Count |
3 |
| JESD-30 Code |
O-PBCY-T3 |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.4W |
| Source Url Status Check Date |
2013-06-14 00:00:00 |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
250Ohm |
| RoHS Status |
ROHS3 Compliant |