Showing 565–576 of 1266 results
Transistors - JFETs
NXP USA Inc. PMBF4391,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Base Part Number |
MBF4391 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Mounting Type |
Surface Mount |
Factory Lead Time |
8 Weeks |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
Drain Current-Max (Abs) (ID) |
0.012A |
Drain-source On Resistance-Max |
30Ohm |
JESD-30 Code |
R-PDSO-F3 |
Pin Count |
3 |
Power Dissipation-Max (Abs) |
0.25W |
Feedback Cap-Max (Crss) |
3.5 pF |
Turn Off Time-Max (toff) |
20ns |
Turn On Time-Max (ton) |
80ns |
Current - Drain (Idss) @ Vds (Vgs=0) |
50mA @ 20V |
Voltage - Cutoff (VGS off) @ Id |
4V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
30Ohm |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBF4392,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
Drain Current-Max (Abs) (ID) |
0.006A |
Drain-source On Resistance-Max |
60Ohm |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
14pF @ 20V |
Pin Count |
3 |
Base Part Number |
MBF4392 |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25W |
Feedback Cap-Max (Crss) |
3.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
25mA @ 20V |
Voltage - Cutoff (VGS off) @ Id |
2V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ108,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Time@Peak Reflow Temperature-Max (s) |
40 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Factory Lead Time |
8 Weeks |
JEDEC-95 Code |
TO-236AB |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V VGS |
Drain-source On Resistance-Max |
8Ohm |
DS Breakdown Voltage-Min |
25V |
Base Part Number |
MBFJ108 |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25W |
Feedback Cap-Max (Crss) |
15 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
10V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
25V |
Resistance - RDS(On) |
8Ohm |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ109,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Factory Lead Time |
8 Weeks |
JEDEC-95 Code |
TO-236AB |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
250mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
30pF @ 10V VGS |
Drain-source On Resistance-Max |
12Ohm |
DS Breakdown Voltage-Min |
25V |
Base Part Number |
MBFJ109 |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25W |
Feedback Cap-Max (Crss) |
15 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
40mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
6V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
25V |
Resistance - RDS(On) |
12Ohm |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ111,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Time@Peak Reflow Temperature-Max (s) |
40 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
JEDEC-95 Code |
TO-236AB |
Drain-source On Resistance-Max |
30Ohm |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
300mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 10V VGS |
Pin Count |
3 |
Base Part Number |
MBFJ111 |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Current - Drain (Idss) @ Vds (Vgs=0) |
20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
10V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
30Ohm |
JESD-30 Code |
R-PDSO-G3 |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ112,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Mounting Type |
Surface Mount |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Part Status |
Obsolete |
Base Part Number |
MBFJ112 |
JEDEC-95 Code |
TO-236AB |
Drain-source On Resistance-Max |
50Ohm |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
300mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 10V VGS |
Pin Count |
3 |
JESD-30 Code |
R-PDSO-G3 |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Current - Drain (Idss) @ Vds (Vgs=0) |
5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
5V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
50Ohm |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ113,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Mounting Type |
Surface Mount |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Part Status |
Obsolete |
Base Part Number |
MBFJ113 |
JEDEC-95 Code |
TO-236AB |
Drain-source On Resistance-Max |
100Ohm |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
300mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
6pF @ 10V VGS |
Pin Count |
3 |
JESD-30 Code |
R-PDSO-G3 |
DS Breakdown Voltage-Min |
40V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Resistance - RDS(On) |
100Ohm |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ174,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
Drain-source On Resistance-Max |
85Ohm |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
300mW |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Base Part Number |
MBFJ174 |
Pin Count |
3 |
DS Breakdown Voltage-Min |
30V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Current - Drain (Idss) @ Vds (Vgs=0) |
20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
5V @ 10nA |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
85Ohm |
RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ175,215
In stock
Manufacturer |
NXP USA Inc. |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
Drain-source On Resistance-Max |
125Ohm |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Power - Max |
300mW |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Base Part Number |
MBFJ175 |
Pin Count |
3 |
DS Breakdown Voltage-Min |
30V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.3W |
Current - Drain (Idss) @ Vds (Vgs=0) |
7mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
125Ohm |
RoHS Status |
ROHS3 Compliant |