Showing 565–576 of 1266 results

Transistors - JFETs

NXP USA Inc. J5A080GHNT0BG2084,

In stock

SKU: J5A080GHNT0BG2084,-9
Manufacturer

NXP USA Inc.

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

NXP USA Inc. J5C145MU0/T0BC7DUP

In stock

SKU: J5C145MU0/T0BC7DUP-9
Manufacturer

NXP USA Inc.

Packaging

Tape & Reel (TR)

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBF4391,215

In stock

SKU: PMBF4391,215-9
Manufacturer

NXP USA Inc.

Base Part Number

MBF4391

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e3

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

40

Mounting Type

Surface Mount

Factory Lead Time

8 Weeks

DS Breakdown Voltage-Min

40V

FET Technology

JUNCTION

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

DEPLETION MODE

Power - Max

250mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

14pF @ 20V

Drain Current-Max (Abs) (ID)

0.012A

Drain-source On Resistance-Max

30Ohm

JESD-30 Code

R-PDSO-F3

Pin Count

3

Power Dissipation-Max (Abs)

0.25W

Feedback Cap-Max (Crss)

3.5 pF

Turn Off Time-Max (toff)

20ns

Turn On Time-Max (ton)

80ns

Current - Drain (Idss) @ Vds (Vgs=0)

50mA @ 20V

Voltage - Cutoff (VGS off) @ Id

4V @ 1nA

Voltage - Breakdown (V(BR)GSS)

40V

Resistance - RDS(On)

30Ohm

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBF4392,215

In stock

SKU: PMBF4392,215-9
Manufacturer

NXP USA Inc.

Time@Peak Reflow Temperature-Max (s)

40

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e3

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Package / Case

TO-236-3, SC-59, SOT-23-3

Mounting Type

Surface Mount

Drain Current-Max (Abs) (ID)

0.006A

Drain-source On Resistance-Max

60Ohm

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

250mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

14pF @ 20V

Pin Count

3

Base Part Number

MBF4392

DS Breakdown Voltage-Min

40V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25W

Feedback Cap-Max (Crss)

3.5 pF

Current - Drain (Idss) @ Vds (Vgs=0)

25mA @ 20V

Voltage - Cutoff (VGS off) @ Id

2V @ 1nA

Voltage - Breakdown (V(BR)GSS)

40V

JESD-30 Code

R-PDSO-G3

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ108,215

In stock

SKU: PMBFJ108,215-9
Manufacturer

NXP USA Inc.

Part Status

Obsolete

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

2001

Time@Peak Reflow Temperature-Max (s)

40

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Factory Lead Time

8 Weeks

JEDEC-95 Code

TO-236AB

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

250mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V VGS

Drain-source On Resistance-Max

8Ohm

DS Breakdown Voltage-Min

25V

Base Part Number

MBFJ108

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25W

Feedback Cap-Max (Crss)

15 pF

Current - Drain (Idss) @ Vds (Vgs=0)

80mA @ 15V

Voltage - Cutoff (VGS off) @ Id

10V @ 1μA

Voltage - Breakdown (V(BR)GSS)

25V

Resistance - RDS(On)

8Ohm

JESD-30 Code

R-PDSO-G3

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ109,215

In stock

SKU: PMBFJ109,215-9
Manufacturer

NXP USA Inc.

Part Status

Obsolete

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

2001

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

TIN

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Factory Lead Time

8 Weeks

JEDEC-95 Code

TO-236AB

Pin Count

3

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

250mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

30pF @ 10V VGS

Drain-source On Resistance-Max

12Ohm

DS Breakdown Voltage-Min

25V

Base Part Number

MBFJ109

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.25W

Feedback Cap-Max (Crss)

15 pF

Current - Drain (Idss) @ Vds (Vgs=0)

40mA @ 15V

Voltage - Cutoff (VGS off) @ Id

6V @ 1μA

Voltage - Breakdown (V(BR)GSS)

25V

Resistance - RDS(On)

12Ohm

JESD-30 Code

R-PDSO-G3

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ111,215

In stock

SKU: PMBFJ111,215-9
Manufacturer

NXP USA Inc.

Time@Peak Reflow Temperature-Max (s)

40

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e3

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Package / Case

TO-236-3, SC-59, SOT-23-3

Mounting Type

Surface Mount

JEDEC-95 Code

TO-236AB

Drain-source On Resistance-Max

30Ohm

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

300mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

6pF @ 10V VGS

Pin Count

3

Base Part Number

MBFJ111

DS Breakdown Voltage-Min

40V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3W

Current - Drain (Idss) @ Vds (Vgs=0)

20mA @ 15V

Voltage - Cutoff (VGS off) @ Id

10V @ 1μA

Voltage - Breakdown (V(BR)GSS)

40V

Resistance - RDS(On)

30Ohm

JESD-30 Code

R-PDSO-G3

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ112

In stock

SKU: PMBFJ112-9
Manufacturer

NXP USA Inc.

Number of Pins

3

Packaging

Cut Tape

Max Operating Temperature

150 °C

Power Dissipation

300 mW

Breakdown Voltage

40 V

Gate to Source Voltage (Vgs)

3 V

REACH SVHC

No SVHC

NXP USA Inc. PMBFJ112,215

In stock

SKU: PMBFJ112,215-9
Manufacturer

NXP USA Inc.

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

2001

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

40

Mounting Type

Surface Mount

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Part Status

Obsolete

Base Part Number

MBFJ112

JEDEC-95 Code

TO-236AB

Drain-source On Resistance-Max

50Ohm

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

300mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

6pF @ 10V VGS

Pin Count

3

JESD-30 Code

R-PDSO-G3

DS Breakdown Voltage-Min

40V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3W

Current - Drain (Idss) @ Vds (Vgs=0)

5mA @ 15V

Voltage - Cutoff (VGS off) @ Id

5V @ 1μA

Voltage - Breakdown (V(BR)GSS)

40V

Resistance - RDS(On)

50Ohm

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ113,215

In stock

SKU: PMBFJ113,215-9
Manufacturer

NXP USA Inc.

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

40

Mounting Type

Surface Mount

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Part Status

Obsolete

Base Part Number

MBFJ113

JEDEC-95 Code

TO-236AB

Drain-source On Resistance-Max

100Ohm

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

300mW

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

6pF @ 10V VGS

Pin Count

3

JESD-30 Code

R-PDSO-G3

DS Breakdown Voltage-Min

40V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3W

Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Voltage - Cutoff (VGS off) @ Id

3V @ 1μA

Voltage - Breakdown (V(BR)GSS)

40V

Resistance - RDS(On)

100Ohm

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ174,215

In stock

SKU: PMBFJ174,215-9
Manufacturer

NXP USA Inc.

Part Status

Obsolete

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

8pF @ 10V VGS

Drain-source On Resistance-Max

85Ohm

JESD-30 Code

R-PDSO-G3

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

300mW

FET Type

P-Channel

Transistor Application

SWITCHING

Base Part Number

MBFJ174

Pin Count

3

DS Breakdown Voltage-Min

30V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3W

Current - Drain (Idss) @ Vds (Vgs=0)

20mA @ 15V

Voltage - Cutoff (VGS off) @ Id

5V @ 10nA

Voltage - Breakdown (V(BR)GSS)

30V

Resistance - RDS(On)

85Ohm

RoHS Status

ROHS3 Compliant

NXP USA Inc. PMBFJ175,215

In stock

SKU: PMBFJ175,215-9
Manufacturer

NXP USA Inc.

Part Status

Obsolete

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Published

1997

Peak Reflow Temperature (Cel)

260

Mounting Type

Surface Mount

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Terminal Position

DUAL

Terminal Form

GULL WING

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

8pF @ 10V VGS

Drain-source On Resistance-Max

125Ohm

JESD-30 Code

R-PDSO-G3

Qualification Status

Not Qualified

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Power - Max

300mW

FET Type

P-Channel

Transistor Application

SWITCHING

Base Part Number

MBFJ175

Pin Count

3

DS Breakdown Voltage-Min

30V

FET Technology

JUNCTION

Power Dissipation-Max (Abs)

0.3W

Current - Drain (Idss) @ Vds (Vgs=0)

7mA @ 15V

Voltage - Cutoff (VGS off) @ Id

3V @ 10nA

Voltage - Breakdown (V(BR)GSS)

30V

Resistance - RDS(On)

125Ohm

RoHS Status

ROHS3 Compliant