Showing 577–588 of 1266 results
NXP USA Inc. PMBFJ176,215
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Part Status |
Obsolete |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
| Pin Count |
3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
300mW |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Drain-source On Resistance-Max |
250Ohm |
| DS Breakdown Voltage-Min |
30V |
| Base Part Number |
MBFJ176 |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.3W |
| Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
250Ohm |
| JESD-30 Code |
R-PDSO-G3 |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ177,215
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Part Status |
Not For New Designs |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
1997 |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
8 Weeks |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.21.00.95 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
8pF @ 10V VGS |
| Drain-source On Resistance-Max |
300Ohm |
| JESD-30 Code |
R-PDSO-G3 |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
300mW |
| FET Type |
P-Channel |
| Transistor Application |
SWITCHING |
| Base Part Number |
MBFJ177 |
| Pin Count |
3 |
| DS Breakdown Voltage-Min |
30V |
| FET Technology |
JUNCTION |
| Power Dissipation-Max (Abs) |
0.3W |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1.5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
800mV @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
30V |
| Resistance - RDS(On) |
300Ohm |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ308,215
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW NOISE |
| HTS Code |
8541.21.00.75 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| DS Breakdown Voltage-Min |
25V |
| FET Technology |
JUNCTION |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
250mW |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds |
5pF @ 10V |
| JEDEC-95 Code |
TO-236AB |
| JESD-30 Code |
R-PDSO-G3 |
| Pin Count |
3 |
| Power Dissipation-Max (Abs) |
0.25W |
| Feedback Cap-Max (Crss) |
2.5 pF |
| Highest Frequency Band |
VERY HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) |
12mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
50Ohm |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ309,215
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Pbfree Code |
Not For New Designs |
| Mounting Type |
TO-236-3, SC-59, SOT-23-3 |
| Package / Case |
YES |
| Weight |
SILICON |
| Minimum Operating Temperature |
1 |
| Transistor Polarity |
150°C TJ |
| Operating Temperature |
Tape & Reel (TR) |
| Packaging |
2001 |
| Current Rating |
NOT SPECIFIED |
| Series |
e3 |
| Part Status |
1 (Unlimited) |
| Moisture Sensitivity Level (MSL) |
3 |
| Type |
Tin (Sn) |
| Terminal Finish |
LOW NOISE |
| Additional Feature |
8541.21.00.75 |
| Technology |
DUAL |
| Terminal Position |
GULL WING |
| Terminal Form |
260 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Continuous Drain Current (ID) |
TO-236AB |
| Base Part Number |
3 |
| JESD-30 Code |
Not Qualified |
| Qualification Status |
SINGLE |
| Element Configuration |
DEPLETION MODE |
| Power Dissipation |
250mW |
| Power - Max |
N-Channel |
| FET Type |
AMPLIFIER |
| Halogen Free |
5pF @ 10V |
| Drain to Source Breakdown Voltage |
25V |
| DS Breakdown Voltage-Min |
JUNCTION |
| Time@Peak Reflow Temperature-Max (s) |
MBFJ309 |
| FET Technology |
0.25W |
| Power Dissipation-Max (Abs) |
2.5 pF |
| Feedback Cap-Max (Crss) |
VERY HIGH FREQUENCY B |
| Highest Frequency Band |
12mA @ 10V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1V @ 1μA |
| Voltage - Cutoff (VGS off) @ Id |
25V |
| Voltage - Breakdown (V(BR)GSS) |
50Ohm |
| Reference Standard |
R-PDSO-G3 |
| REACH SVHC |
ROHS3 Compliant |
NXP USA Inc. PMBFJ310,215
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Base Part Number |
MBFJ310 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Part Status |
Obsolete |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW NOISE |
| HTS Code |
8541.21.00.75 |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Mounting Type |
Surface Mount |
| DS Breakdown Voltage-Min |
25V |
| FET Technology |
JUNCTION |
| Configuration |
SINGLE |
| Operating Mode |
DEPLETION MODE |
| Power - Max |
250mW |
| FET Type |
N-Channel |
| Transistor Application |
AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds |
5pF @ 10V |
| JEDEC-95 Code |
TO-236AB |
| JESD-30 Code |
R-PDSO-G3 |
| Pin Count |
3 |
| Power Dissipation-Max (Abs) |
0.25W |
| Feedback Cap-Max (Crss) |
2.5 pF |
| Highest Frequency Band |
VERY HIGH FREQUENCY B |
| Current - Drain (Idss) @ Vds (Vgs=0) |
24mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
2V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
50Ohm |
| Qualification Status |
Not Qualified |
| RoHS Status |
ROHS3 Compliant |
NXP USA Inc. PMBFJ620,115
In stock
| Manufacturer |
NXP USA Inc. |
|---|---|
| Part Status |
Obsolete |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Number of Elements |
2 |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2001 |
| Peak Reflow Temperature (Cel) |
260 |
| Mounting Type |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW NOISE |
| HTS Code |
8541.21.00.75 |
| Terminal Form |
GULL WING |
| JESD-609 Code |
e3 |
| Time@Peak Reflow Temperature-Max (s) |
40 |
| Input Capacitance (Ciss) (Max) @ Vds |
5pF @ 10V |
| DS Breakdown Voltage-Min |
25V |
| JESD-30 Code |
R-PDSO-G6 |
| Qualification Status |
Not Qualified |
| Configuration |
SEPARATE, 2 ELEMENTS |
| Operating Mode |
ENHANCEMENT MODE |
| Power - Max |
190mW |
| FET Type |
2 N-Channel (Dual) |
| Transistor Application |
AMPLIFIER |
| Base Part Number |
MBFJ620 |
| Pin Count |
6 |
| FET Technology |
METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) |
0.19W |
| Feedback Cap-Max (Crss) |
2.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
24mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
2V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
| Resistance - RDS(On) |
50Ohm |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor 2N3820
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2002 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins |
3 |
| Supplier Device Package |
TO-92-3 |
| Weight |
201mg |
| Breakdown Voltage / V |
20V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
15mA |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
-20V |
| Max Power Dissipation |
350mW |
| Packaging |
Bulk |
| Base Part Number |
2N3820 |
| Input Capacitance |
32pF |
| Current - Drain (Idss) @ Vds (Vgs=0) |
300μA @ 10V |
| Power - Max |
350mW |
| FET Type |
P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
32pF @ 10V |
| Drain to Source Voltage (Vdss) |
-10V |
| Continuous Drain Current (ID) |
7.65mA |
| Gate to Source Voltage (Vgs) |
8V |
| Drain to Source Breakdown Voltage |
20V |
| Element Configuration |
Single |
| Power Dissipation |
350mW |
| Voltage - Cutoff (VGS off) @ Id |
8V @ 10μA |
| Voltage - Breakdown (V(BR)GSS) |
20V |
| Height |
6.35mm |
| Length |
6.35mm |
| Width |
6.35mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor 2N3820_D26Z
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2002 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
2N3820 |
| Power - Max |
350mW |
| FET Type |
P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
32pF @ 10V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
300μA @ 10V |
| Voltage - Cutoff (VGS off) @ Id |
8V @ 10μA |
| Voltage - Breakdown (V(BR)GSS) |
20V |
ON Semiconductor 2N5457_D27Z
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92-3 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2011 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
2N5457 |
| Power - Max |
625mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
500mV @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
ON Semiconductor 2N5457_D74Z
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92-3 |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
2N5457 |
| Power - Max |
625mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
500mV @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
25V |
ON Semiconductor 2N5457_D75Z
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Box (TB) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
2N5457 |
| Power - Max |
625mW |
| FET Type |
N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
| Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id |
500mV @ 10nA |
| Voltage - Breakdown (V(BR)GSS) |
25V |