Showing 601–612 of 1266 results
Transistors - JFETs
ON Semiconductor 2N5461_D26Z
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
2N5461 |
Power - Max |
350mW |
FET Type |
P-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
ON Semiconductor 2N5461_D74Z
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Box (TB) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
2N5461 |
Power - Max |
350mW |
FET Type |
P-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
ON Semiconductor 2N5461G
In stock
Manufacturer |
ON Semiconductor |
---|---|
Max Power Dissipation |
350mW |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~135°C TJ |
Packaging |
Bulk |
JESD-609 Code |
e1 |
Pbfree Code |
yes |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-40V |
Mounting Type |
Through Hole |
Mount |
Through Hole |
FET Type |
P-Channel |
Transistor Application |
AMPLIFIER |
Time@Peak Reflow Temperature-Max (s) |
40 |
Base Part Number |
2N5461 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
350mW |
Peak Reflow Temperature (Cel) |
260 |
Terminal Position |
BOTTOM |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Gate to Source Voltage (Vgs) |
40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
RoHS Status |
RoHS Compliant |
Current Rating |
10mA |
Lead Free |
Lead Free |
ON Semiconductor 2N5461RLRA
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-65°C~135°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e0 |
Terminal Position |
BOTTOM |
Mount |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-40V |
Max Power Dissipation |
350mW |
Pbfree Code |
no |
Peak Reflow Temperature (Cel) |
240 |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
2N5461 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
P-Channel |
Reach Compliance Code |
not_compliant |
Current Rating |
-10mA |
Drain to Source Voltage (Vdss) |
40V |
Gate to Source Voltage (Vgs) |
40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
ON Semiconductor 2N5461RLRAG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Terminal Position |
BOTTOM |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~135°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Pbfree Code |
yes |
Part Status |
Obsolete |
JESD-609 Code |
e1 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-40V |
Max Power Dissipation |
350mW |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Base Part Number |
2N5461 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
P-Channel |
Reach Compliance Code |
unknown |
Peak Reflow Temperature (Cel) |
260 |
Drain to Source Voltage (Vdss) |
40V |
Gate to Source Voltage (Vgs) |
40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
RoHS Status |
RoHS Compliant |
Current Rating |
-10mA |
Lead Free |
Lead Free |
ON Semiconductor 2N5462_D27Z
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
2N5462 |
Power - Max |
350mW |
FET Type |
P-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
4mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1.8V @ 1μA |
Voltage - Breakdown (V(BR)GSS) |
40V |
ON Semiconductor 2N5462G
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-65°C~135°C TJ |
Packaging |
Bulk |
Published |
2001 |
Max Power Dissipation |
350mW |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-40V |
JESD-609 Code |
e1 |
Terminal Position |
BOTTOM |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Time@Peak Reflow Temperature-Max (s) |
40 |
Base Part Number |
2N5462 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
P-Channel |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
100mA |
Drain to Source Voltage (Vdss) |
40V |
Gate to Source Voltage (Vgs) |
40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
4mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1.8V @ 1μA |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor 2N5638_D26Z
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92-3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
2N5638 |
Power - Max |
350mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
10pF @ 12V VGS |
Current - Drain (Idss) @ Vds (Vgs=0) |
50mA @ 20V |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
30Ohms |
ON Semiconductor 2N5638RLRAG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Terminal Position |
BOTTOM |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
30V |
Max Power Dissipation |
310mW |
JESD-609 Code |
e1 |
Peak Reflow Temperature (Cel) |
260 |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Time@Peak Reflow Temperature-Max (s) |
40 |
Base Part Number |
2N5638 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
310mW |
Reach Compliance Code |
unknown |
Current Rating |
10mA |
Input Capacitance (Ciss) (Max) @ Vds |
10pF @ 12V VGS |
Gate to Source Voltage (Vgs) |
35V |
Drain to Source Breakdown Voltage |
30V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
4 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
50mA @ 20V |
Resistance - RDS(On) |
30Ohm |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor 2N5639_D75Z
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Box (TB) |
Published |
2003 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
2N5639 |
Power - Max |
350mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
10pF @ 12V VGS |
Current - Drain (Idss) @ Vds (Vgs=0) |
25mA @ 20V |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
60Ohm |
ON Semiconductor 2N5639RLRA
In stock
Manufacturer |
Rochester Electronics LLC |
---|---|
Surface Mount |
NO |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Mfr |
onsemi |
Number of Elements |
1 |
Package |
Bulk |
Package Shape |
ROUND |
Product Status |
Active |
Series |
* |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Terminal Finish |
TIN LEAD |
Terminal Position |
BOTTOM |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
240 |
Reach Compliance Code |
unknown |
Pin Count |
3 |
JESD-30 Code |
O-PBCY-T3 |
Qualification Status |
COMMERCIAL |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Transistor Application |
SWITCHING |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-92 |
Drain-source On Resistance-Max |
60 Ω |
DS Breakdown Voltage-Min |
30 V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
4 pF |
ON Semiconductor 2N5639RLRAG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-65°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
JESD-609 Code |
e1 |
Peak Reflow Temperature (Cel) |
260 |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Silver/Copper (Sn/Ag/Cu) |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
30V |
Max Power Dissipation |
310mW |
Terminal Position |
BOTTOM |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Transistor Application |
SWITCHING |
Current Rating |
10mA |
Base Part Number |
2N5639 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power - Max |
310mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
10pF @ 12V VGS |
Gate to Source Voltage (Vgs) |
35V |
Reach Compliance Code |
unknown |
Drain-source On Resistance-Max |
60Ohm |
Drain to Source Breakdown Voltage |
30V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
4 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
25mA @ 20V |
Resistance - RDS(On) |
60Ohm |
RoHS Status |
RoHS Compliant |
Time@Peak Reflow Temperature-Max (s) |
40 |
Lead Free |
Lead Free |