Showing 757–768 of 1266 results
Transistors - JFETs
ON Semiconductor MMBF5460
In stock
Manufacturer |
ON Semiconductor |
---|---|
Series |
e3 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
3 |
Supplier Device Package |
30mg |
Weight |
SILICON |
Minimum Operating Temperature |
1 |
Transistor Polarity |
-55°C~150°C TJ |
Operating Temperature |
Tape & Reel (TR) |
Technology |
DUAL |
Packaging |
2001 |
JESD-609 Code |
yes |
Pbfree Code |
Obsolete |
Part Status |
1 (Unlimited) |
Moisture Sensitivity Level (MSL) |
3 |
Number of Terminations |
EAR99 |
Type |
Tin (Sn) |
Additional Feature |
8541.21.00.95 |
Subcategory |
-40V |
Voltage - Rated DC |
225mW |
Mount |
Surface Mount |
Factory Lead Time |
14 Weeks |
JEDEC-95 Code |
40V |
Reach Compliance Code |
-10mA |
Configuration |
Single |
Element Configuration |
DEPLETION MODE |
Operating Mode |
225mW |
Power - Max |
P-Channel |
FET Type |
AMPLIFIER |
Halogen Free |
7pF @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
40V |
Product Type |
-5mA |
DS Breakdown Voltage-Min |
JUNCTION |
Power Dissipation-Max (Abs) |
2 pF |
Terminal Position |
GULL WING |
Highest Frequency Band |
1mA @ 15V |
Current - Drain (Idss) @ Vds (Vgs=0) |
750mV @ 1μA |
Product Category |
930μm |
Height |
2.92mm |
Length |
1.3mm |
Width |
No |
Radiation Hardening |
No SVHC |
REACH SVHC |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
MBF5460 |
RoHS Status |
Lead Free |
ON Semiconductor MMBF5460LT1
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e0 |
Package / Case |
SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature (Max.) |
150°C |
Packaging |
Cut Tape (CT) |
Max Power Dissipation |
225mW |
Mount |
Surface Mount |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Voltage - Rated DC |
-40V |
Published |
2006 |
Terminal Position |
DUAL |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
200mW |
Reach Compliance Code |
not_compliant |
Current Rating |
-10mA |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
240 |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
P-CHANNEL |
Gate to Source Voltage (Vgs) |
40V |
Input Capacitance |
7pF |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
RoHS Status |
Non-RoHS Compliant |
Lead Free |
Contains Lead |
ON Semiconductor MMBF5460LT1G
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Terminal Position |
DUAL |
Mount |
Surface Mount |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
-40V |
Max Power Dissipation |
225mW |
Published |
2006 |
Terminal Form |
GULL WING |
FET Type |
P-Channel |
Transistor Application |
AMPLIFIER |
Time@Peak Reflow Temperature-Max (s) |
40 |
Base Part Number |
MBF5460 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
200mW |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
-10mA |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Drain to Source Voltage (Vdss) |
40V |
Gate to Source Voltage (Vgs) |
40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
1mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
750mV @ 1μA |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor MMBF5461
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Terminal Position |
DUAL |
Published |
2001 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-40V |
Max Power Dissipation |
225mW |
Mount |
Surface Mount |
Factory Lead Time |
6 Weeks |
Gate to Source Voltage (Vgs) |
40V |
Current Rating |
-10mA |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
225mW |
FET Type |
P-Channel |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
7pF @ 15V |
Drain to Source Voltage (Vdss) |
40V |
Continuous Drain Current (ID) |
-9mA |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
2 pF |
Terminal Form |
GULL WING |
Current - Drain (Idss) @ Vds (Vgs=0) |
2mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
Height |
930μm |
Length |
2.92mm |
Width |
1.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Base Part Number |
MBF5461 |
Lead Free |
Lead Free |
ON Semiconductor MMBF5484LT1
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e0 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature (Max.) |
150°C |
Operating Temperature (Min.) |
-55°C |
Packaging |
Cut Tape (CT) |
Terminal Position |
DUAL |
Published |
2006 |
Pbfree Code |
no |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Voltage - Rated DC |
25V |
Max Power Dissipation |
225mW |
Package / Case |
SOT-23-3 |
Mount |
Surface Mount |
Power Dissipation |
200mW |
Peak Reflow Temperature (Cel) |
240 |
Current Rating |
10mA |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Transistor Application |
AMPLIFIER |
Drain to Source Voltage (Vdss) |
25V |
Terminal Form |
GULL WING |
Polarity/Channel Type |
N-CHANNEL |
Gate to Source Voltage (Vgs) |
25V |
Input Capacitance |
5pF |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
1 pF |
RoHS Status |
Non-RoHS Compliant |
Reach Compliance Code |
not_compliant |
Lead Free |
Contains Lead |
ON Semiconductor MMBFJ108
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
-25V |
Max Power Dissipation |
350mW |
Factory Lead Time |
24 Weeks |
Packaging |
Tape & Reel (TR) |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
25V |
Number of Elements |
1 |
Terminal Position |
DUAL |
Gate to Source Voltage (Vgs) |
-25V |
FET Technology |
JUNCTION |
Base Part Number |
MBFJ108 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
350mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Voltage (Vdss) |
25V |
Continuous Drain Current (ID) |
80mA |
Terminal Form |
GULL WING |
Current Rating |
80mA |
Max Junction Temperature (Tj) |
150°C |
Drain to Source Resistance |
8Ohm |
Current - Drain (Idss) @ Vds (Vgs=0) |
80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
Resistance - RDS(On) |
8Ohm |
Height |
1.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor MMBFJ110
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Max Power Dissipation |
460mW |
Factory Lead Time |
21 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
18Ohm |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.21.00.95 |
Published |
2008 |
Terminal Position |
DUAL |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance |
18Ohm |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
460mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Voltage (Vdss) |
25V |
Continuous Drain Current (ID) |
10mA |
Gate to Source Voltage (Vgs) |
-25V |
Terminal Form |
GULL WING |
Base Part Number |
MBFJ110 |
Current - Drain (Idss) @ Vds (Vgs=0) |
10mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
4V @ 10nA |
Resistance - RDS(On) |
18Ohm |
Height |
940μm |
Length |
2.92mm |
Width |
1.4mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor MMBFJ111
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2008 |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
-35V |
Operating Temperature |
-55°C~150°C TJ |
Terminal Position |
DUAL |
Factory Lead Time |
16 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
35V |
Max Power Dissipation |
350mW |
Packaging |
Tape & Reel (TR) |
Terminal Form |
GULL WING |
Drain to Source Resistance |
30Ohm |
Feedback Cap-Max (Crss) |
5 pF |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
350mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Voltage (Vdss) |
35V |
Continuous Drain Current (ID) |
20mA |
Gate to Source Voltage (Vgs) |
-35V |
FET Technology |
JUNCTION |
Current Rating |
20mA |
Base Part Number |
MBFJ111 |
Current - Drain (Idss) @ Vds (Vgs=0) |
20mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 1μA |
Resistance - RDS(On) |
30Ohm |
Height |
1.04mm |
Length |
2.9mm |
Width |
1.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor MMBFJ112
In stock
Manufacturer |
ON Semiconductor |
---|---|
Current Rating |
5mA |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
30mg |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
-35V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
JESD-609 Code |
e3 |
Packaging |
Tape & Reel (TR) |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
35V |
Max Power Dissipation |
350mW |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Contact Plating |
Tin |
Factory Lead Time |
42 Weeks |
Drain to Source Resistance |
50Ohm |
Feedback Cap-Max (Crss) |
5 pF |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
350mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Voltage (Vdss) |
35V |
Continuous Drain Current (ID) |
5mA |
Gate to Source Voltage (Vgs) |
-35V |
FET Technology |
JUNCTION |
Max Junction Temperature (Tj) |
150°C |
Number of Channels |
1 |
Base Part Number |
MBFJ112 |
Current - Drain (Idss) @ Vds (Vgs=0) |
5mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1μA |
Resistance - RDS(On) |
50Ohm |
Height |
1.11mm |
Length |
2.92mm |
Width |
1.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
ON Semiconductor MMBFJ175LT1
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature (Max.) |
150°C |
Packaging |
Cut Tape (CT) |
Published |
2006 |
JESD-609 Code |
e0 |
Terminal Position |
DUAL |
Pbfree Code |
no |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
HTS Code |
8541.21.00.95 |
Voltage - Rated DC |
-25V |
Max Power Dissipation |
225mW |
Surface Mount |
YES |
Package / Case |
SOT-23-3 |
Transistor Application |
CHOPPER |
Peak Reflow Temperature (Cel) |
240 |
Current Rating |
-60mA |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Polarity/Channel Type |
P-CHANNEL |
Continuous Drain Current (ID) |
60mA |
Terminal Form |
GULL WING |
Gate to Source Voltage (Vgs) |
30V |
Drain-source On Resistance-Max |
125Ohm |
Input Capacitance |
11pF |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
5.5 pF |
RoHS Status |
Non-RoHS Compliant |
Reach Compliance Code |
not_compliant |
Lead Free |
Contains Lead |
ON Semiconductor MMBFJ175LT1G
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Weight |
1.437803g |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
30V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Current Rating |
-60mA |
Published |
2005 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
125Ohm |
Voltage - Rated DC |
-25V |
Max Power Dissipation |
225mW |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Pin Count |
3 |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
225mW |
FET Type |
P-Channel |
Transistor Application |
CHOPPER |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
11pF @ 10V VGS |
Drain to Source Voltage (Vdss) |
25V |
Continuous Drain Current (ID) |
-1nA |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Resistance |
125Ohm |
Feedback Cap-Max (Crss) |
5.5 pF |
Base Part Number |
MBFJ175 |
Current - Drain (Idss) @ Vds (Vgs=0) |
7mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
Resistance - RDS(On) |
125Ohm |
Height |
1.01mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
ON Semiconductor MMBFJ175LT3G
In stock
Manufacturer |
ON Semiconductor |
---|---|
Terminal Finish |
Tin (Sn) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Factory Lead Time |
8 Weeks |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Max Power Dissipation |
225mW |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Element Configuration |
Single |
FET Type |
P-Channel |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
11pF @ 10V VGS |
Gate to Source Voltage (Vgs) |
25V |
Current - Drain (Idss) @ Vds (Vgs=0) |
7mA @ 15V |
Voltage - Cutoff (VGS off) @ Id |
3V @ 10nA |
Voltage - Breakdown (V(BR)GSS) |
30V |
Resistance - RDS(On) |
125Ohm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |