Showing 769–780 of 1266 results

Transistors - JFETs

ON Semiconductor MMBFJ176

In stock

SKU: MMBFJ176-9
Manufacturer

ON Semiconductor

Packaging

Tape & Reel (TR)

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Breakdown Voltage / V

30V

Number of Elements

1

Max Power Dissipation

225mW

Factory Lead Time

42 Weeks

Published

2008

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

HTS Code

8541.21.00.95

Voltage - Rated DC

-30V

Operating Temperature

-55°C~150°C TJ

Terminal Position

DUAL

FET Technology

JUNCTION

Drain to Source Resistance

250Ohm

Base Part Number

MBFJ176

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

225mW

FET Type

P-Channel

Transistor Application

SWITCHING

Drain to Source Voltage (Vdss)

30V

Continuous Drain Current (ID)

-25mA

Gate to Source Voltage (Vgs)

30V

Terminal Form

GULL WING

Current Rating

25mA

Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Voltage - Cutoff (VGS off) @ Id

1V @ 10nA

Resistance - RDS(On)

250Ohm

Height

930μm

Length

2.92mm

Width

1.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor MMBFJ177_G

In stock

SKU: MMBFJ177_G-9
Manufacturer

ON Semiconductor

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Base Part Number

MBFJ177

Power - Max

225mW

FET Type

P-Channel

Current - Drain (Idss) @ Vds (Vgs=0)

1.5mA @ 15V

Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Voltage - Breakdown (V(BR)GSS)

30V

ON Semiconductor MMBFJ177LT1

In stock

SKU: MMBFJ177LT1-9
Manufacturer

ON Semiconductor

Max Power Dissipation

225mW

Number of Pins

3

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature (Max.)

150°C

Packaging

Cut Tape (CT)

JESD-609 Code

e0

Pbfree Code

no

Published

2005

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Voltage - Rated DC

-25V

Surface Mount

YES

Package / Case

SOT-23-3

Operating Mode

DEPLETION MODE

Transistor Application

CHOPPER

Reach Compliance Code

not_compliant

Current Rating

-20mA

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Terminal Form

GULL WING

Terminal Position

DUAL

Polarity/Channel Type

P-CHANNEL

Gate to Source Voltage (Vgs)

30V

Input Capacitance

11pF

FET Technology

JUNCTION

Feedback Cap-Max (Crss)

5.5 pF

RoHS Status

Non-RoHS Compliant

Peak Reflow Temperature (Cel)

240

Lead Free

Contains Lead

ON Semiconductor MMBFJ177LT1G

In stock

SKU: MMBFJ177LT1G-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Contact Plating

Tin

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Surface Mount

YES

Number of Pins

3

Weight

1.437803g

Transistor Element Material

SILICON

Breakdown Voltage / V

30V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Current Rating

-20mA

Factory Lead Time

8 Weeks

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

-25V

Max Power Dissipation

225mW

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Published

2005

Time@Peak Reflow Temperature-Max (s)

40

FET Technology

JUNCTION

Drain to Source Resistance

300Ohm

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

225mW

FET Type

P-Channel

Transistor Application

CHOPPER

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

11pF @ 10V VGS

Drain to Source Voltage (Vdss)

25V

Continuous Drain Current (ID)

20mA

Gate to Source Voltage (Vgs)

25V

Base Part Number

MBFJ177

Pin Count

3

Feedback Cap-Max (Crss)

5.5 pF

Current - Drain (Idss) @ Vds (Vgs=0)

1.5mA @ 15V

Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Resistance - RDS(On)

300Ohm

Height

1.01mm

Length

3.04mm

Width

1.4mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor MMBFJ201

In stock

SKU: MMBFJ201-9
Manufacturer

ON Semiconductor

Published

2008

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Breakdown Voltage / V

-40V

Number of Elements

1

Operating Temperature

-55°C~150°C TJ

Terminal Position

DUAL

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated DC

40V

Max Power Dissipation

350mW

Mount

Surface Mount

Factory Lead Time

42 Weeks

Gate to Source Voltage (Vgs)

-40V

Current Rating

50mA

Number of Channels

1

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

350mW

FET Type

N-Channel

Transistor Application

AMPLIFIER

Drain to Source Voltage (Vdss)

40V

Continuous Drain Current (ID)

1mA

FET Technology

JUNCTION

Max Junction Temperature (Tj)

150°C

Terminal Form

GULL WING

Current - Drain (Idss) @ Vds (Vgs=0)

200μA @ 20V

Voltage - Cutoff (VGS off) @ Id

300mV @ 10nA

Height

1.2mm

Length

2.92mm

Width

1.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Base Part Number

MBFJ201

Lead Free

Lead Free

ON Semiconductor MMBFJ201_G

In stock

SKU: MMBFJ201_G-9
Manufacturer

ON Semiconductor

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Operating Temperature

-55°C~150°C TJ

Packaging

Bulk

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Base Part Number

MBFJ201

Power - Max

350mW

FET Type

N-Channel

Current - Drain (Idss) @ Vds (Vgs=0)

200μA @ 20V

Voltage - Cutoff (VGS off) @ Id

300mV @ 10nA

Voltage - Breakdown (V(BR)GSS)

40V

ON Semiconductor MMBFJ202

In stock

SKU: MMBFJ202-9
Manufacturer

ON Semiconductor

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Breakdown Voltage / V

40V

HTS Code

8541.21.00.95

Factory Lead Time

16 Weeks

Published

2008

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Operating Temperature

-55°C~150°C TJ

Voltage - Rated DC

40V

Transistor Application

AMPLIFIER

Drain to Source Voltage (Vdss)

40V

Terminal Form

GULL WING

Current Rating

50mA

Base Part Number

MBFJ202

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

350mW

FET Type

N-Channel

Max Power Dissipation

350mW

Terminal Position

DUAL

Continuous Drain Current (ID)

5.4mA

Gate to Source Voltage (Vgs)

-40V

FET Technology

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0)

900μA @ 20V

Voltage - Cutoff (VGS off) @ Id

800mV @ 10nA

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor MMBFJ203

In stock

SKU: MMBFJ203-9
Manufacturer

ON Semiconductor

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2008

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Power - Max

350mW

FET Type

N-Channel

Current - Drain (Idss) @ Vds (Vgs=0)

4mA @ 20V

Voltage - Cutoff (VGS off) @ Id

2V @ 10nA

Voltage - Breakdown (V(BR)GSS)

40V

ON Semiconductor MMBFJ270

In stock

SKU: MMBFJ270-9
Manufacturer

ON Semiconductor

Max Power Dissipation

225mW

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Number of Elements

1

Packaging

Tape & Reel (TR)

Published

2006

Operating Temperature

-55°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

HTS Code

8541.21.00.95

Voltage - Rated DC

-30V

Contact Plating

Tin

Factory Lead Time

42 Weeks

Gate to Source Voltage (Vgs)

30V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Base Part Number

MBFJ270

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

225mW

FET Type

P-Channel

Transistor Application

SWITCHING

Drain to Source Voltage (Vdss)

30V

Continuous Drain Current (ID)

-15mA

Terminal Form

GULL WING

Terminal Position

DUAL

Current - Drain (Idss) @ Vds (Vgs=0)

2mA @ 15V

Voltage - Cutoff (VGS off) @ Id

500mV @ 1nA

Height

1.04mm

Length

2.9mm

Width

1.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Current Rating

-50mA

Lead Free

Lead Free

ON Semiconductor MMBFJ271

In stock

SKU: MMBFJ271-9
Manufacturer

ON Semiconductor

Published

2006

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Voltage - Rated DC

-30V

Factory Lead Time

6 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.21.00.95

Packaging

Tape & Reel (TR)

Max Power Dissipation

225mW

Continuous Drain Current (ID)

-50mA

Gate to Source Voltage (Vgs)

30V

Current Rating

-50mA

Base Part Number

MBFJ271

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

225mW

FET Type

P-Channel

Transistor Application

SWITCHING

Terminal Position

DUAL

Terminal Form

GULL WING

FET Technology

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0)

6mA @ 15V

Voltage - Cutoff (VGS off) @ Id

1.5V @ 1nA

Height

1.04mm

Length

2.9mm

Width

1.3mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor MMBFJ305

In stock

SKU: MMBFJ305-9
Manufacturer

ON Semiconductor

Operating Temperature

-55°C~150°C TJ

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

30mg

Transistor Element Material

SILICON

Number of Elements

1

Terminal Finish

Tin (Sn)

Factory Lead Time

7 Weeks

Packaging

Tape & Reel (TR)

Published

2014

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage Rated

30V

HTS Code

8541.21.00.95

FET Type

N-Channel

Transistor Application

AMPLIFIER

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

8mA

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

MMBFJ305

Element Configuration

Single

Operating Mode

DEPLETION MODE

Max Power Dissipation

225mW

Terminal Position

DUAL

Drain to Source Voltage (Vdss)

15V

Continuous Drain Current (ID)

1nA

Gate to Source Voltage (Vgs)

-30V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Current - Drain (Idss) @ Vds (Vgs=0)

8mA @ 15V

Voltage - Cutoff (VGS off) @ Id

500mV @ 1nA

Voltage - Breakdown (V(BR)GSS)

30V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

ON Semiconductor MMBFJ309LT1

In stock

SKU: MMBFJ309LT1-9
Manufacturer

ON Semiconductor

Terminal Form

GULL WING

Number of Pins

3

Transistor Element Material

SILICON

Number of Elements

1

Voltage Rated

25V

Packaging

Cut Tape (CT)

Published

2006

Pbfree Code

no

Part Status

Obsolete

JESD-609 Code

e0

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Max Operating Temperature

150°C

Voltage - Rated DC

25V

Terminal Position

DUAL

Surface Mount

YES

Package / Case

SOT-23-3

Drain to Source Voltage (Vdss)

25V

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

30

Pin Count

3

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

DEPLETION MODE

Power Dissipation

225mW

Transistor Application

AMPLIFIER

Reach Compliance Code

not_compliant

Peak Reflow Temperature (Cel)

240

Continuous Drain Current (ID)

10mA

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

25V

FET Technology

JUNCTION

Feedback Cap-Max (Crss)

2.5 pF

Highest Frequency Band

ULTRA HIGH FREQUENCY B

RoHS Status

Non-RoHS Compliant

Current Rating

30mA

Lead Free

Contains Lead