Showing 1057–1068 of 1266 results

Transistors - JFETs

Toshiba 2SK711-GR(TE85R,F)

In stock

SKU: 2SK711-GR(TE85R,F)-9
Manufacturer

Toshiba

Mounting

Surface Mount

Automotive

No

ECCN (US)

EAR99

Lead Shape

Gull-wing

Maximum Drain Gate Voltage (V)

-20

Maximum Operating Temperature (°C)

125

Maximum Power Dissipation (mW)

150

Military

No

Minimum Drain Saturation Current (mA)

6000

Minimum Operating Temperature (°C)

-55

Material

Si

Package Length

2.9

Package Height

1.1

Package Width

1.5

PCB changed

3

Standard Package Name

S-MINI

Supplier Package

S-Mini

Packaging

Tape and Reel

Part Status

Obsolete

Pin Count

3

Configuration

Single

Channel Type

N

RoHS Status

RoHS Compliant

Toshiba 2SK711-V(TE85L)

In stock

SKU: 2SK711-V(TE85L)-9
Manufacturer

Toshiba

Mounting

Surface Mount

Automotive

No

ECCN (US)

EAR99

Lead Shape

Gull-wing

Maximum Drain Gate Voltage (V)

-20

Maximum Operating Temperature (°C)

125

Maximum Power Dissipation (mW)

150

Military

No

Minimum Drain Saturation Current (mA)

16000

Minimum Operating Temperature (°C)

-55

Material

Si

Package Length

2.9

Package Height

1.1

Package Width

1.5

PCB changed

3

Standard Package Name

S-MINI

Supplier Package

S-Mini

Packaging

Tape and Reel

Part Status

Obsolete

Pin Count

3

Configuration

Single

Channel Type

N

RoHS Status

Supplier Unconfirmed

Toshiba 2SK879-Y(TE85R,F)

In stock

SKU: 2SK879-Y(TE85R,F)-9
Manufacturer

Toshiba

Material

Si

Automotive

No

ECCN (US)

EAR99

Lead Shape

Flat

Maximum Drain Gate Voltage (V)

-50

Maximum Operating Temperature (°C)

125

Maximum Power Dissipation (mW)

100

Military

No

Minimum Operating Temperature (°C)

-55

Mounting

Surface Mount

Package Height

0.9

Package Length

2

Package Width

1.25

PCB changed

3

Supplier Package

USM

Packaging

Tape and Reel

Pin Count

3

Configuration

Single

Channel Type

N

RoHS Status

RoHS Compliant

Toshiba JS8850A-AS

In stock

SKU: JS8850A-AS-9
Manufacturer

Toshiba

Reach Compliance Code

unknown

Number of Terminals

4

Transistor Element Material

GALLIUM ARSENIDE

Package Shape

RECTANGULAR

JESD-609 Code

e0

ECCN Code

EAR99

Terminal Finish

TIN LEAD

Subcategory

Other Transistors

Terminal Position

UPPER

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

240

Surface Mount

YES

JESD-30 Code

R-XUUC-N4

Pin Count

4

Qualification Status

Not Qualified

Number of Elements

1

Configuration

SINGLE

Operating Mode

DEPLETION MODE

Transistor Application

AMPLIFIER

Polarity/Channel Type

N-CHANNEL

Drain Current-Max (Abs) (ID)

0.125 A

DS Breakdown Voltage-Min

15 V

FET Technology

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band

KU BAND

Power Dissipation Ambient-Max

1 W

Toshiba JS8855AS

In stock

SKU: JS8855AS-9
Manufacturer

Toshiba

Surface Mount

YES

Number of Pins

6

Number of Terminals

5

Transistor Element Material

GALLIUM ARSENIDE

Package Shape

RECTANGULAR

JESD-609 Code

e0

ECCN Code

EAR99

Terminal Finish

TIN LEAD

Terminal Position

UPPER

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

240

Reach Compliance Code

unknown

Pin Count

5

JESD-30 Code

R-XUUC-N5

Qualification Status

Not Qualified

Operating Mode

DEPLETION MODE

Transistor Application

AMPLIFIER

DS Breakdown Voltage-Min

15 V

FET Technology

JUNCTION

Highest Frequency Band

KU BAND

Toshiba Semiconductor and Storage 2SK208-GR(TE85L,F)

In stock

SKU: 2SK208-GR(TE85L,F)-9
Manufacturer

Toshiba Semiconductor and Storage

Factory Lead Time

52 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Supplier Device Package

SC-59

Operating Temperature

125°C TJ

Packaging

Cut Tape (CT)

Published

2009

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

125°C

Min Operating Temperature

-55°C

Max Power Dissipation

100mW

Element Configuration

Single

Power - Max

100mW

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

8.2pF @ 10V

Continuous Drain Current (ID)

6.5mA

Input Capacitance

8.2pF

Current - Drain (Idss) @ Vds (Vgs=0)

2.6mA @ 10V

Voltage - Cutoff (VGS off) @ Id

400mV @ 100nA

Voltage - Breakdown (V(BR)GSS)

50V

Current Drain (Id) - Max

6.5mA

Radiation Hardening

No

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK208-O(TE85L,F)

In stock

SKU: 2SK208-O(TE85L,F)-9
Manufacturer

Toshiba Semiconductor and Storage

Max Power Dissipation

100mW

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

125°C TJ

Packaging

Cut Tape (CT)

Published

2009

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

HTS Code

8541.21.00.95

Factory Lead Time

52 Weeks

Terminal Form

GULL WING

Terminal Position

DUAL

Element Configuration

Single

Operating Mode

DEPLETION MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

8.2pF @ 10V

Continuous Drain Current (ID)

1.4mA

Gate to Source Voltage (Vgs)

-5V

FET Technology

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0)

600μA @ 10V

Voltage - Cutoff (VGS off) @ Id

400mV @ 100nA

Voltage - Breakdown (V(BR)GSS)

50V

Current Drain (Id) - Max

6.5mA

Radiation Hardening

No

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK208-R(TE85L,F)

In stock

SKU: 2SK208-R(TE85L,F)-9
Manufacturer

Toshiba Semiconductor and Storage

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

7.994566mg

Transistor Element Material

SILICON

Terminal Form

GULL WING

Factory Lead Time

52 Weeks

Published

2009

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

100mW

Terminal Position

DUAL

Operating Temperature

125°C TJ

Element Configuration

Single

Current - Drain (Idss) @ Vds (Vgs=0)

300μA @ 10V

Voltage - Cutoff (VGS off) @ Id

400mV @ 100nA

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

8.2pF @ 10V

Drain to Source Voltage (Vdss)

10V

Continuous Drain Current (ID)

750μA

Gate to Source Voltage (Vgs)

-30V

FET Technology

JUNCTION

Operating Mode

DEPLETION MODE

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

50V

Current Drain (Id) - Max

6.5mA

Height

1.1mm

Length

2.9mm

Width

1.5mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F)

In stock

SKU: 2SK208-Y(TE85L,F)-9
Manufacturer

Toshiba Semiconductor and Storage

Factory Lead Time

52 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

3

Weight

7.994566mg

Transistor Element Material

SILICON

Number of Elements

1

Operating Temperature

125°C TJ

Packaging

Tape & Reel (TR)

Published

2002

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

LOW NOISE

HTS Code

8541.21.00.95

Max Power Dissipation

100mW

Terminal Position

DUAL

Terminal Form

GULL WING

Element Configuration

Single

Operating Mode

DEPLETION MODE

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

8.2pF @ 10V

Drain to Source Voltage (Vdss)

10V

Continuous Drain Current (ID)

6.5mA

Gate to Source Voltage (Vgs)

-30V

FET Technology

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0)

1.2mA @ 10V

Voltage - Cutoff (VGS off) @ Id

400mV @ 100nA

Voltage - Breakdown (V(BR)GSS)

50V

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F

In stock

SKU: 2SK2145-BL(TE85L,F-9
Manufacturer

Toshiba Semiconductor and Storage

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SC-74A, SOT-753

Operating Temperature

125°C TJ

Packaging

Cut Tape (CT)

Published

2014

Pbfree Code

yes

Factory Lead Time

52 Weeks

Max Power Dissipation

300mW

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Element Configuration

Dual

FET Type

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 10V

Continuous Drain Current (ID)

14mA

Gate to Source Voltage (Vgs)

-1.5V

Current - Drain (Idss) @ Vds (Vgs=0)

6mA @ 10V

Voltage - Cutoff (VGS off) @ Id

200mV @ 100nA

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK2145-GR(TE85L,F

In stock

SKU: 2SK2145-GR(TE85L,F-9
Manufacturer

Toshiba Semiconductor and Storage

Part Status

Active

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SC-74A, SOT-753

Number of Pins

5

Operating Temperature

125°C TJ

Packaging

Tape & Reel (TR)

Published

2014

Pbfree Code

yes

Factory Lead Time

52 Weeks

Max Power Dissipation

300mW

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Element Configuration

Dual

FET Type

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 10V

Drain to Source Voltage (Vdss)

10V

Continuous Drain Current (ID)

14mA

Gate to Source Voltage (Vgs)

-30V

Current - Drain (Idss) @ Vds (Vgs=0)

2.6mA @ 10V

Voltage - Cutoff (VGS off) @ Id

200mV @ 100nA

RoHS Status

RoHS Compliant

Toshiba Semiconductor and Storage 2SK2145-Y(TE85L,F)

In stock

SKU: 2SK2145-Y(TE85L,F)-9
Manufacturer

Toshiba Semiconductor and Storage

Factory Lead Time

52 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SC-74A, SOT-753

Number of Pins

5

Transistor Element Material

SILICON

Number of Elements

2

Operating Temperature

125°C TJ

Packaging

Tape & Reel (TR)

Published

2005

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

5

Additional Feature

LOW NOISE

Max Power Dissipation

300mW

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Dual

Operating Mode

DEPLETION MODE

FET Type

2 N-Channel (Dual)

Transistor Application

AMPLIFIER

Input Capacitance (Ciss) (Max) @ Vds

13pF @ 10V

Drain to Source Voltage (Vdss)

10V

Continuous Drain Current (ID)

14mA

Gate to Source Voltage (Vgs)

-30V

FET Technology

JUNCTION

Current - Drain (Idss) @ Vds (Vgs=0)

1.2mA @ 10V

Voltage - Cutoff (VGS off) @ Id

200mV @ 100nA

RoHS Status

RoHS Compliant