Showing 1057–1068 of 1266 results
Transistors - JFETs
Toshiba 2SK711-GR(TE85R,F)
In stock
Manufacturer |
Toshiba |
---|---|
Mounting |
Surface Mount |
Automotive |
No |
ECCN (US) |
EAR99 |
Lead Shape |
Gull-wing |
Maximum Drain Gate Voltage (V) |
-20 |
Maximum Operating Temperature (°C) |
125 |
Maximum Power Dissipation (mW) |
150 |
Military |
No |
Minimum Drain Saturation Current (mA) |
6000 |
Minimum Operating Temperature (°C) |
-55 |
Material |
Si |
Package Length |
2.9 |
Package Height |
1.1 |
Package Width |
1.5 |
PCB changed |
3 |
Standard Package Name |
S-MINI |
Supplier Package |
S-Mini |
Packaging |
Tape and Reel |
Part Status |
Obsolete |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
RoHS Compliant |
Toshiba 2SK711-V(TE85L)
In stock
Manufacturer |
Toshiba |
---|---|
Mounting |
Surface Mount |
Automotive |
No |
ECCN (US) |
EAR99 |
Lead Shape |
Gull-wing |
Maximum Drain Gate Voltage (V) |
-20 |
Maximum Operating Temperature (°C) |
125 |
Maximum Power Dissipation (mW) |
150 |
Military |
No |
Minimum Drain Saturation Current (mA) |
16000 |
Minimum Operating Temperature (°C) |
-55 |
Material |
Si |
Package Length |
2.9 |
Package Height |
1.1 |
Package Width |
1.5 |
PCB changed |
3 |
Standard Package Name |
S-MINI |
Supplier Package |
S-Mini |
Packaging |
Tape and Reel |
Part Status |
Obsolete |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
Supplier Unconfirmed |
Toshiba 2SK879-Y(TE85R,F)
In stock
Manufacturer |
Toshiba |
---|---|
Material |
Si |
Automotive |
No |
ECCN (US) |
EAR99 |
Lead Shape |
Flat |
Maximum Drain Gate Voltage (V) |
-50 |
Maximum Operating Temperature (°C) |
125 |
Maximum Power Dissipation (mW) |
100 |
Military |
No |
Minimum Operating Temperature (°C) |
-55 |
Mounting |
Surface Mount |
Package Height |
0.9 |
Package Length |
2 |
Package Width |
1.25 |
PCB changed |
3 |
Supplier Package |
USM |
Packaging |
Tape and Reel |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
RoHS Compliant |
Toshiba JS8850A-AS
In stock
Manufacturer |
Toshiba |
---|---|
Reach Compliance Code |
unknown |
Number of Terminals |
4 |
Transistor Element Material |
GALLIUM ARSENIDE |
Package Shape |
RECTANGULAR |
JESD-609 Code |
e0 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN LEAD |
Subcategory |
Other Transistors |
Terminal Position |
UPPER |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
240 |
Surface Mount |
YES |
JESD-30 Code |
R-XUUC-N4 |
Pin Count |
4 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
N-CHANNEL |
Drain Current-Max (Abs) (ID) |
0.125 A |
DS Breakdown Voltage-Min |
15 V |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Highest Frequency Band |
KU BAND |
Power Dissipation Ambient-Max |
1 W |
Toshiba JS8855AS
In stock
Manufacturer |
Toshiba |
---|---|
Surface Mount |
YES |
Number of Pins |
6 |
Number of Terminals |
5 |
Transistor Element Material |
GALLIUM ARSENIDE |
Package Shape |
RECTANGULAR |
JESD-609 Code |
e0 |
ECCN Code |
EAR99 |
Terminal Finish |
TIN LEAD |
Terminal Position |
UPPER |
Terminal Form |
NO LEAD |
Peak Reflow Temperature (Cel) |
240 |
Reach Compliance Code |
unknown |
Pin Count |
5 |
JESD-30 Code |
R-XUUC-N5 |
Qualification Status |
Not Qualified |
Operating Mode |
DEPLETION MODE |
Transistor Application |
AMPLIFIER |
DS Breakdown Voltage-Min |
15 V |
FET Technology |
JUNCTION |
Highest Frequency Band |
KU BAND |
Toshiba Semiconductor and Storage 2SK208-GR(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Factory Lead Time |
52 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Supplier Device Package |
SC-59 |
Operating Temperature |
125°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2009 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
125°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
100mW |
Element Configuration |
Single |
Power - Max |
100mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
8.2pF @ 10V |
Continuous Drain Current (ID) |
6.5mA |
Input Capacitance |
8.2pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
2.6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
400mV @ 100nA |
Voltage - Breakdown (V(BR)GSS) |
50V |
Current Drain (Id) - Max |
6.5mA |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK208-O(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Max Power Dissipation |
100mW |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
125°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2009 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
HTS Code |
8541.21.00.95 |
Factory Lead Time |
52 Weeks |
Terminal Form |
GULL WING |
Terminal Position |
DUAL |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
8.2pF @ 10V |
Continuous Drain Current (ID) |
1.4mA |
Gate to Source Voltage (Vgs) |
-5V |
FET Technology |
JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) |
600μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
400mV @ 100nA |
Voltage - Breakdown (V(BR)GSS) |
50V |
Current Drain (Id) - Max |
6.5mA |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK208-R(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Terminal Form |
GULL WING |
Factory Lead Time |
52 Weeks |
Published |
2009 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
100mW |
Terminal Position |
DUAL |
Operating Temperature |
125°C TJ |
Element Configuration |
Single |
Current - Drain (Idss) @ Vds (Vgs=0) |
300μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
400mV @ 100nA |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
8.2pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
750μA |
Gate to Source Voltage (Vgs) |
-30V |
FET Technology |
JUNCTION |
Operating Mode |
DEPLETION MODE |
FET Type |
N-Channel |
Voltage - Breakdown (V(BR)GSS) |
50V |
Current Drain (Id) - Max |
6.5mA |
Height |
1.1mm |
Length |
2.9mm |
Width |
1.5mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Factory Lead Time |
52 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
125°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
LOW NOISE |
HTS Code |
8541.21.00.95 |
Max Power Dissipation |
100mW |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds |
8.2pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
6.5mA |
Gate to Source Voltage (Vgs) |
-30V |
FET Technology |
JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) |
1.2mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
400mV @ 100nA |
Voltage - Breakdown (V(BR)GSS) |
50V |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK2145-BL(TE85L,F
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-74A, SOT-753 |
Operating Temperature |
125°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2014 |
Pbfree Code |
yes |
Factory Lead Time |
52 Weeks |
Max Power Dissipation |
300mW |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Dual |
FET Type |
2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Continuous Drain Current (ID) |
14mA |
Gate to Source Voltage (Vgs) |
-1.5V |
Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK2145-GR(TE85L,F
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-74A, SOT-753 |
Number of Pins |
5 |
Operating Temperature |
125°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
Pbfree Code |
yes |
Factory Lead Time |
52 Weeks |
Max Power Dissipation |
300mW |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Dual |
FET Type |
2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
14mA |
Gate to Source Voltage (Vgs) |
-30V |
Current - Drain (Idss) @ Vds (Vgs=0) |
2.6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK2145-Y(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Factory Lead Time |
52 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-74A, SOT-753 |
Number of Pins |
5 |
Transistor Element Material |
SILICON |
Number of Elements |
2 |
Operating Temperature |
125°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
5 |
Additional Feature |
LOW NOISE |
Max Power Dissipation |
300mW |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Dual |
Operating Mode |
DEPLETION MODE |
FET Type |
2 N-Channel (Dual) |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
14mA |
Gate to Source Voltage (Vgs) |
-30V |
FET Technology |
JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) |
1.2mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
RoHS Status |
RoHS Compliant |