Showing 1069–1080 of 1266 results
Transistors - JFETs
Toshiba Semiconductor and Storage 2SK3320-BL(TE85L,F
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Factory Lead Time |
52 Weeks |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
Number of Pins |
5 |
Operating Temperature |
125°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2014 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
200mW |
Reach Compliance Code |
unknown |
Element Configuration |
Dual |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
14mA |
Gate to Source Voltage (Vgs) |
-30V |
Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK3320-Y(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package |
USV |
Packaging |
Cut Tape (CT) |
Published |
2014 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
200mW |
Power - Max |
200mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Input Capacitance |
13pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
1.2mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
200mV @ 100nA |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK880-BL(TE85L,F)
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-70, SOT-323 |
Weight |
28.009329mg |
Operating Temperature |
125°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2009 |
Pbfree Code |
yes |
Factory Lead Time |
52 Weeks |
Max Power Dissipation |
100mW |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Drain to Source Voltage (Vdss) |
10V |
Continuous Drain Current (ID) |
500μA |
Gate to Source Voltage (Vgs) |
-50V |
Current - Drain (Idss) @ Vds (Vgs=0) |
6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1.5V @ 100nA |
Voltage - Breakdown (V(BR)GSS) |
50V |
RoHS Status |
RoHS Compliant |
Toshiba Semiconductor and Storage 2SK880GRTE85LF
In stock
Manufacturer |
Toshiba Semiconductor and Storage |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SC-70, SOT-323 |
Number of Pins |
3 |
Operating Temperature |
125°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2009 |
Part Status |
Active |
Factory Lead Time |
52 Weeks |
Element Configuration |
Single |
Max Power Dissipation |
100mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
13pF @ 10V |
Continuous Drain Current (ID) |
6.5mA |
Gate to Source Voltage (Vgs) |
-1.5V |
Current - Drain (Idss) @ Vds (Vgs=0) |
2.6mA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1.5V @ 100nA |
Voltage - Breakdown (V(BR)GSS) |
50V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |