Showing 1105–1116 of 1266 results
Transistors - JFETs
Vishay 2N4857A
In stock
Manufacturer |
Central Semiconductor Corp |
---|---|
Surface Mount |
NO |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Package Shape |
ROUND |
JESD-609 Code |
e0 |
Pbfree Code |
No |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
HTS Code |
8541.21.00.95 |
Subcategory |
Other Transistors |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
JESD-30 Code |
O-MBCY-W3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Transistor Application |
SWITCHING |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-18 |
Drain-source On Resistance-Max |
40 Ω |
DS Breakdown Voltage-Min |
40 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.36 W |
Feedback Cap-Max (Crss) |
3.5 pF |
Power Dissipation Ambient-Max |
0.36 W |
Vishay 2N4858A-E3
In stock
Manufacturer |
Vishay Intertechnologies |
---|---|
Mount |
Through Hole |
Surface Mount |
NO |
Number of Pins |
3 |
Packaging |
Bulk |
JESD-609 Code |
e3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Operating Temperature |
200 °C |
Min Operating Temperature |
-55 °C |
Subcategory |
Other Transistors |
Reach Compliance Code |
unknown |
Current Rating |
50 mA |
Element Configuration |
Single |
Polarity/Channel Type |
N-CHANNEL |
Continuous Drain Current (ID) |
8 mA |
Gate to Source Voltage (Vgs) |
-40 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.36 W |
Drain to Source Resistance |
60 Ω |
Radiation Hardening |
No |
Vishay 2N5198
In stock
Manufacturer |
Vishay Intertechnologies |
---|---|
Mount |
Through Hole |
Surface Mount |
NO |
Number of Pins |
6 |
Packaging |
Bulk |
JESD-609 Code |
e0 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Reach Compliance Code |
unknown |
Current Rating |
50 mA |
Element Configuration |
Single |
Breakdown Voltage |
-50 V |
Polarity/Channel Type |
N-CHANNEL |
Continuous Drain Current (ID) |
7 mA |
Gate to Source Voltage (Vgs) |
-50 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Vishay 2N5199
In stock
Manufacturer |
Solitron Devices Inc |
---|---|
Surface Mount |
NO |
Number of Terminals |
6 |
Transistor Element Material |
SILICON |
Number of Elements |
2 |
Package Shape |
ROUND |
Pbfree Code |
No |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
JESD-30 Code |
O-MBCY-W6 |
Qualification Status |
Not Qualified |
Configuration |
SEPARATE, 2 ELEMENTS |
Operating Mode |
DEPLETION MODE |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-71 |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.25 W |
Vishay 2N5432
In stock
Manufacturer |
Vishay |
---|---|
Mount |
Through Hole |
Number of Pins |
3 |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Max Power Dissipation |
300 mW |
Current Rating |
100 mA |
Element Configuration |
Single |
Breakdown Voltage |
-25 V |
Continuous Drain Current (ID) |
150 mA |
Gate to Source Voltage (Vgs) |
-25 V |
Input Capacitance |
30 pF |
Drain to Source Resistance |
5 Ω |
Radiation Hardening |
No |
Vishay 2N5460-E3
In stock
Manufacturer |
Vishay Intertechnologies |
---|---|
Surface Mount |
NO |
Number of Pins |
3 |
JESD-609 Code |
e3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Reach Compliance Code |
unknown |
Element Configuration |
Single |
Power Dissipation |
350 mW |
Polarity/Channel Type |
P-CHANNEL |
Gate to Source Voltage (Vgs) |
40 V |
Drain to Source Breakdown Voltage |
40 V |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.31 W |
Vishay 2N5462
In stock
Manufacturer |
Vishay |
---|---|
Number of Pins |
3 |
Weight |
219.992299 mg |
Voltage Rating (DC) |
-40 V |
Max Operating Temperature |
150 °C |
Min Operating Temperature |
-55 °C |
Current Rating |
10 mA |
Element Configuration |
Single |
Power Dissipation |
350 mW |
Breakdown Voltage |
40 V |
Drain to Source Voltage (Vdss) |
40 V |
Continuous Drain Current (ID) |
10 mA |
Gate to Source Voltage (Vgs) |
40 V |
REACH SVHC |
No SVHC |
Lead Free |
Lead Free |
Vishay 2N5564
In stock
Manufacturer |
Solitron Devices Inc |
---|---|
Surface Mount |
NO |
Number of Terminals |
6 |
Transistor Element Material |
SILICON |
Package Shape |
ROUND |
Pbfree Code |
No |
Terminal Position |
BOTTOM |
Terminal Form |
WIRE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
unknown |
JESD-30 Code |
O-MBCY-W6 |
Qualification Status |
Not Qualified |
Number of Elements |
2 |
Configuration |
SEPARATE, 2 ELEMENTS |
Operating Mode |
DEPLETION MODE |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-71 |
FET Technology |
JUNCTION |
Power Dissipation-Max (Abs) |
0.325 W |