Showing 1129–1140 of 1266 results
Transistors - JFETs
Vishay MFE823
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Surface Mount |
NO |
Weight |
219.992299 mg |
JESD-609 Code |
e0 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Subcategory |
Other Transistors |
Reach Compliance Code |
unknown |
Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Polarity/Channel Type |
P-CHANNEL |
Continuous Drain Current (ID) |
1 A |
Drain Current-Max (Abs) (ID) |
0.03 A |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) |
0.3 W |
Vishay PN4392-TR1-E3
In stock
Manufacturer |
Vishay |
---|---|
Automotive |
No |
Maximum Drain Gate Voltage (V) |
-40 |
Maximum Gate Source Voltage (V) |
-40 |
Maximum Operating Temperature (°C) |
150 |
Maximum Power Dissipation (mW) |
350 |
Military |
No |
Minimum Operating Temperature (°C) |
-55 |
Mounting |
Through Hole |
Package Height |
4.6 |
Package Length |
4.6 |
Package Width |
3.6 |
PCB changed |
3 |
Standard Package Name |
TO-92 |
Supplier Package |
TO-226AA |
Packaging |
Tape and Reel |
Part Status |
Obsolete |
Pin Count |
3 |
Configuration |
Single |
Channel Type |
N |
RoHS Status |
RoHS Compliant |
Vishay Siliconix 2N4117A-2
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
4 |
Supplier Device Package |
TO-206AF (TO-72) |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
300mW |
Element Configuration |
Single |
Power - Max |
300mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Continuous Drain Current (ID) |
90μA |
Gate to Source Voltage (Vgs) |
-40V |
Input Capacitance |
3pF |
Drain to Source Resistance |
11kOhm |
Current - Drain (Idss) @ Vds (Vgs=0) |
30μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
600mV @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4117A-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Published |
2009 |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
-70V |
Number of Elements |
1 |
Operating Temperature |
-55°C~175°C TJ |
Terminal Position |
BOTTOM |
Packaging |
Bulk |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300mW |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Gate to Source Voltage (Vgs) |
-40V |
Pin Count |
8 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
300mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
1.5 pF |
Terminal Form |
WIRE |
Current - Drain (Idss) @ Vds (Vgs=0) |
30μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
600mV @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
O-MBCY-W4 |
Lead Free |
Lead Free |
Vishay Siliconix 2N4118A
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Min Operating Temperature |
-55°C |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
4 |
Supplier Device Package |
TO-206AF (TO-72) |
Breakdown Voltage / V |
-40V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Factory Lead Time |
10 Weeks |
Current Rating |
50mA |
Max Power Dissipation |
300mW |
Element Configuration |
Single |
Power Dissipation |
300mW |
Power - Max |
300mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
Input Capacitance |
3pF |
Drain to Source Resistance |
7kOhm |
Current - Drain (Idss) @ Vds (Vgs=0) |
80μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4118A-2
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Terminal Finish |
MATTE TIN |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Number of Elements |
1 |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Mount |
Through Hole |
Terminal Position |
BOTTOM |
Max Power Dissipation |
300mW |
Terminal Form |
WIRE |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
1.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
80μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4118A-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Max Power Dissipation |
300mW |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Breakdown Voltage / V |
-70V |
Number of Elements |
1 |
Packaging |
Bulk |
Published |
2009 |
Operating Temperature |
-55°C~175°C TJ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
JESD-30 Code |
O-MBCY-W4 |
Element Configuration |
Single |
Operating Mode |
DEPLETION MODE |
Power Dissipation |
300mW |
FET Type |
N-Channel |
Transistor Application |
AMPLIFIER |
Terminal Form |
WIRE |
Terminal Position |
BOTTOM |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
1.5 pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
80μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
1V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
Pin Count |
8 |
RoHS Status |
ROHS3 Compliant |
Vishay Siliconix 2N4119A
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
4 |
Supplier Device Package |
TO-206AF (TO-72) |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
300mW |
Current Rating |
50mA |
Element Configuration |
Single |
Power Dissipation |
300mW |
Power - Max |
300mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
Input Capacitance |
3pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
200μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
2V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4119A-2
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
3 |
Supplier Device Package |
TO-206AF (TO-72) |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Max Power Dissipation |
300mW |
Element Configuration |
Single |
Power - Max |
300mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
Input Capacitance |
3pF |
Current - Drain (Idss) @ Vds (Vgs=0) |
200μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
2V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
Non-RoHS Compliant |
Vishay Siliconix 2N4119A-E3
In stock
Manufacturer |
Vishay Siliconix |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-206AF, TO-72-4 Metal Can |
Number of Pins |
4 |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Bulk |
Published |
2009 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
300mW |
Element Configuration |
Single |
Power Dissipation |
300mW |
FET Type |
N-Channel |
Input Capacitance (Ciss) (Max) @ Vds |
3pF @ 10V |
Gate to Source Voltage (Vgs) |
-40V |
FET Technology |
JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) |
200μA @ 10V |
Voltage - Cutoff (VGS off) @ Id |
2V @ 1nA |
Voltage - Breakdown (V(BR)GSS) |
40V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |