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Manufacturer |
Alpha & Omega Semiconductor Inc. |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-251-3 Stub Leads, IPak |
Current - Continuous Drain (Id) @ 25℃ |
45A Ta 70A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
7.5W Ta 60W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
2.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2719pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
60nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
45A |
RoHS Status |
RoHS Compliant |
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-523 |
Number of Pins |
3 |
Supplier Device Package |
SOT-523 |
Weight |
2.012816mg |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
FET Type |
N-Channel |
Factory Lead Time |
14 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Resistance |
400MOhm |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
280mW Ta |
Element Configuration |
Single |
Power Dissipation |
280mW |
Turn On Delay Time |
5.1 ns |
Published |
2012 |
Rds On (Max) @ Id, Vgs |
400mOhm @ 600mA, 4.5V |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
6V |
Current - Continuous Drain (Id) @ 25°C |
630mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.74nC @ 4.5V |
Rise Time |
7.4ns |
Drain to Source Voltage (Vdss) |
20V |
Drive Voltage (Max Rds On,Min Rds On) |
1.8V 4.5V |
Vgs (Max) |
±6V |
Fall Time (Typ) |
12.3 ns |
Turn-Off Delay Time |
26.7 ns |
Continuous Drain Current (ID) |
630mA |
Vgs(th) (Max) @ Id |
1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
60.67pF @ 16V |
Drain to Source Breakdown Voltage |
20V |
Input Capacitance |
60.67pF |
Drain to Source Resistance |
300mOhm |
Rds On Max |
400 mΩ |
Height |
800μm |
Length |
1.7mm |
Width |
850μm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
PG-SOT223-4 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
1.8W |
Factory Lead Time |
10 Weeks |
Number of Terminations |
4 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.8W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
Vgs(th) (Max) @ Id |
2V @ 160μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
1.17A |
Turn On Delay Time |
24 ns |
FET Type |
P-Channel |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.8Ohm |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Recovery Time |
46 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.5 V |
Height |
1.8mm |
Length |
6.5mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2001 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
Resistance |
8MOhm |
Voltage - Rated DC |
55V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
110A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
200W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
200W |
Termination |
SMD/SMT |
Turn On Delay Time |
14 ns |
JEDEC-95 Code |
TO-252 |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
8m Ω @ 62A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
110A Tc |
Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
Rise Time |
101ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
65 ns |
Turn-Off Delay Time |
50 ns |
Continuous Drain Current (ID) |
110A |
Threshold Voltage |
4V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain Current-Max (Abs) (ID) |
75A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Avalanche Energy Rating (Eas) |
264 mJ |
Recovery Time |
104 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Height |
5.084mm |
Length |
10.668mm |
Width |
10.54mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Case Connection |
DRAIN |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1997 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Number of Terminations |
3 |
Termination |
Through Hole |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Resistance |
100mOhm |
Voltage - Rated DC |
-55V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-19A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Power Dissipation-Max |
68W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
56W |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Threshold Voltage |
-4V |
JEDEC-95 Code |
TO-220AB |
Rds On (Max) @ Id, Vgs |
100m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
620pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
19A Tc |
Gate Charge (Qg) (Max) @ Vgs |
35nC @ 10V |
Rise Time |
55ns |
Drain to Source Voltage (Vdss) |
55V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
41 ns |
Turn-Off Delay Time |
30 ns |
Continuous Drain Current (ID) |
-19A |
FET Type |
P-Channel |
Turn On Delay Time |
13 ns |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-55V |
Pulsed Drain Current-Max (IDM) |
68A |
Dual Supply Voltage |
-55V |
Recovery Time |
82 ns |
Nominal Vgs |
-4 V |
Height |
8.77mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Transistor Application |
SWITCHING |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Termination |
SMD/SMT |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power Dissipation |
69W |
Factory Lead Time |
12 Weeks |
ECCN Code |
EAR99 |
Resistance |
27mOhm |
Voltage - Rated DC |
55V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
37A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
107W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Number of Terminations |
2 |
Case Connection |
DRAIN |
Threshold Voltage |
4V |
JEDEC-95 Code |
TO-252AA |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
27m Ω @ 26A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1300pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
44A Tc |
Gate Charge (Qg) (Max) @ Vgs |
65nC @ 10V |
Rise Time |
69ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
60 ns |
Turn-Off Delay Time |
47 ns |
Continuous Drain Current (ID) |
37A |
Turn On Delay Time |
7.3 ns |
FET Type |
N-Channel |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
20A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Recovery Time |
98 ns |
Nominal Vgs |
4 V |
Height |
2.3876mm |
Length |
6.7056mm |
Width |
6.8mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Resistance |
15MOhm |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2010 |
Series |
HEXFET® |
Part Status |
Active |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Factory Lead Time |
12 Weeks |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
350W Tc |
Element Configuration |
Single |
Power Dissipation |
350W |
Turn On Delay Time |
18 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
Drain to Source Breakdown Voltage |
150V |
Input Capacitance |
4.46nF |
Rise Time |
60ns |
Drain to Source Voltage (Vdss) |
150V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
35 ns |
Turn-Off Delay Time |
25 ns |
Continuous Drain Current (ID) |
85A |
Threshold Voltage |
5V |
Gate to Source Voltage (Vgs) |
30V |
Current - Continuous Drain (Id) @ 25°C |
85A Tc |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
Max Junction Temperature (Tj) |
175°C |
Drain to Source Resistance |
12mOhm |
Rds On Max |
15 mΩ |
Nominal Vgs |
5 V |
Height |
5.084mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Nexperia USA Inc. |
---|---|
Published |
2005 |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
HTS Code |
8541.21.00.75 |
Factory Lead Time |
4 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Packaging |
Tape & Reel (TR) |
Terminal Position |
DUAL |
Rds On (Max) @ Id, Vgs |
1.6 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.4V @ 250μA |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max |
350mW Ta |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Terminal Form |
GULL WING |
Pin Count |
3 |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
Current - Continuous Drain (Id) @ 25°C |
360mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
0.8nC @ 4.5V |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
DS Breakdown Voltage-Min |
60V |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Power Dissipation |
235W |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.31247g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
UniFET™ |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
94MOhm |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
235W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Contact Plating |
Tin |
Factory Lead Time |
7 Weeks |
Turn-Off Delay Time |
75 ns |
Continuous Drain Current (ID) |
33A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
33A Tc |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
230ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
120 ns |
Turn On Delay Time |
35 ns |
Case Connection |
DRAIN |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
250V |
Nominal Vgs |
3 V |
Height |
4.83mm |
Length |
10.67mm |
Width |
11.33mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
36mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
PowerTrench® |
Power Dissipation |
1.6W |
Factory Lead Time |
13 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.6W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
JESD-609 Code |
e3 |
Turn On Delay Time |
7 ns |
Continuous Drain Current (ID) |
4.9mA |
Threshold Voltage |
-2.2V |
Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
4ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
4 ns |
Turn-Off Delay Time |
33 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
4.9A |
Drain-source On Resistance-Max |
0.042Ohm |
Drain to Source Breakdown Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
3mm |
Width |
1.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
260.37mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
135W |
Mount |
Surface Mount |
Number of Terminations |
2 |
Terminal Finish |
Tin (Sn) |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
135W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Vgs (Max) |
±20V |
Fall Time (Typ) |
22 ns |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
16m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1874pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
9A Ta 50A Tc |
Gate Charge (Qg) (Max) @ Vgs |
47nC @ 10V |
Rise Time |
54ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Turn On Delay Time |
8 ns |
FET Type |
N-Channel |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
50A |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
9A |
Drain to Source Breakdown Voltage |
75V |
Avalanche Energy Rating (Eas) |
95 mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Series |
PowerTrench® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Pbfree Code |
yes |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
19MOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
100V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
7.5A |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Turn-Off Delay Time |
37 ns |
Continuous Drain Current (ID) |
7.5A |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
23m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2015pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
7.5A Ta |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Rise Time |
20ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Power Dissipation |
2.5W |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
100V |
Dual Supply Voltage |
100V |
Nominal Vgs |
4 V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
14 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Mode |
ENHANCEMENT MODE |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2002 |
Series |
PowerTrench® |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Voltage - Rated DC |
-60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-3.3A |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Element Configuration |
Single |
Contact Plating |
Tin |
Factory Lead Time |
11 Weeks |
Continuous Drain Current (ID) |
-3A |
Threshold Voltage |
-1.6V |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
150m Ω @ 3A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
732pF @ 30V |
Current - Continuous Drain (Id) @ 25°C |
3A Ta |
Gate Charge (Qg) (Max) @ Vgs |
22nC @ 10V |
Rise Time |
11ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
10 ns |
Turn-Off Delay Time |
10 ns |
Turn On Delay Time |
8 ns |
Power Dissipation |
2.5W |
Gate to Source Voltage (Vgs) |
20V |
Drain Current-Max (Abs) (ID) |
3A |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
60V |
Nominal Vgs |
-1.6 V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
P-Channel |
Lead Free |
Lead Free |
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