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Manufacturer |
Alpha & Omega Semiconductor Inc. |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-251-3 Stub Leads, IPak |
Current - Continuous Drain (Id) @ 25℃ |
18A Ta 46A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V 10V |
Power Dissipation (Max) |
2.5W Ta 50W Tc |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2011 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
8m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
951pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs |
22.5nC @ 10V |
Drain to Source Voltage (Vdss) |
30V |
Vgs (Max) |
±20V |
Continuous Drain Current (ID) |
46A |
RoHS Status |
RoHS Compliant |
In stock
Manufacturer |
Diodes Incorporated |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Number of Pins |
3 |
Weight |
7.994566mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Number of Channels |
1 |
Factory Lead Time |
16 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
3.5Ohm |
Voltage - Rated DC |
50V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
200mA |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Part Status |
Active |
Voltage |
50V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
25 ns |
Current |
2A |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
300mW |
Turn On Delay Time |
20 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
3.5 Ω @ 220mA, 10V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
Current - Continuous Drain (Id) @ 25°C |
200mA Ta |
Rise Time |
10ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Power Dissipation-Max |
300mW Ta |
Element Configuration |
Single |
Turn-Off Delay Time |
20 ns |
Continuous Drain Current (ID) |
200mA |
Threshold Voltage |
1.2V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
50V |
Nominal Vgs |
1.2 V |
Feedback Cap-Max (Crss) |
8 pF |
Height |
1mm |
Length |
2.9mm |
Width |
1.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Element Configuration |
Single |
Factory Lead Time |
10 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
4 |
Number of Elements |
1 |
Voltage |
600V |
Power Dissipation-Max |
1.8W Ta |
Pbfree Code |
yes |
Current |
12A |
Fall Time (Typ) |
182 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
5.4 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 94μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
Rise Time |
5.6ns |
Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
Vgs (Max) |
±20V |
Power Dissipation |
1.8W |
Case Connection |
DRAIN |
Continuous Drain Current (ID) |
120mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain to Source Breakdown Voltage |
600V |
Recovery Time |
130 ns |
FET Feature |
Depletion Mode |
Height |
1.5mm |
Length |
6.5mm |
Width |
3.5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Manufacturer Package Identifier |
PG-SOT223-4 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
1999 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Power Dissipation |
1.8W |
Factory Lead Time |
10 Weeks |
Number of Terminations |
4 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
40 |
Pin Count |
4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.8W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Part Status |
Active |
Case Connection |
DRAIN |
Threshold Voltage |
-1.5V |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
800m Ω @ 1.17A, 10V |
Vgs(th) (Max) @ Id |
2V @ 160μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
160pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.17A Ta |
Gate Charge (Qg) (Max) @ Vgs |
7.8nC @ 10V |
Rise Time |
9ns |
Drain to Source Voltage (Vdss) |
60V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
19 ns |
Turn-Off Delay Time |
32 ns |
Continuous Drain Current (ID) |
1.17A |
Turn On Delay Time |
24 ns |
FET Type |
P-Channel |
Max Dual Supply Voltage |
-60V |
Drain-source On Resistance-Max |
0.8Ohm |
Drain to Source Breakdown Voltage |
-60V |
Dual Supply Voltage |
-60V |
Recovery Time |
46 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
-1.5 V |
Height |
1.8mm |
Length |
6.5mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Number of Terminations |
3 |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1998 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Resistance |
200mOhm |
Voltage - Rated DC |
-100V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Power Dissipation-Max |
79W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
79W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Turn On Delay Time |
15 ns |
Threshold Voltage |
-4V |
JEDEC-95 Code |
TO-220AB |
Rds On (Max) @ Id, Vgs |
200m Ω @ 8.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
14A Tc |
Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
Rise Time |
58ns |
Drain to Source Voltage (Vdss) |
100V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
46 ns |
Turn-Off Delay Time |
45 ns |
Continuous Drain Current (ID) |
-14A |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-100V |
Pulsed Drain Current-Max (IDM) |
56A |
Dual Supply Voltage |
-100V |
Avalanche Energy Rating (Eas) |
250 mJ |
Recovery Time |
190 ns |
Nominal Vgs |
-4 V |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Turn On Delay Time |
6.4 ns |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
600MOhm |
Termination |
SMD/SMT |
Voltage - Rated DC |
200V |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
5A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
43W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
43W |
Case Connection |
DRAIN |
Contact Plating |
Tin |
Factory Lead Time |
12 Weeks |
Drain Current-Max (Abs) (ID) |
5A |
Drain to Source Breakdown Voltage |
200V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
300pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
5A Tc |
Gate Charge (Qg) (Max) @ Vgs |
23nC @ 10V |
Rise Time |
11ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
12 ns |
Turn-Off Delay Time |
20 ns |
Continuous Drain Current (ID) |
5A |
Threshold Voltage |
4V |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Transistor Application |
SWITCHING |
FET Type |
N-Channel |
Pulsed Drain Current-Max (IDM) |
20A |
Dual Supply Voltage |
200V |
Avalanche Energy Rating (Eas) |
46 mJ |
Recovery Time |
140 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Switching Current |
5A |
Height |
2.52mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rds On (Max) @ Id, Vgs |
600m Ω @ 2.9A, 10V |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
ECCN Code |
EAR99 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
1997 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Factory Lead Time |
12 Weeks |
Resistance |
40mOhm |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
55V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
3.8A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PDSO-G4 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1W Ta |
Number of Terminations |
4 |
Operating Mode |
ENHANCEMENT MODE |
Continuous Drain Current (ID) |
3.8A |
Threshold Voltage |
2V |
Turn On Delay Time |
6.2 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
40m Ω @ 3.8A, 10V |
Vgs(th) (Max) @ Id |
2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
3.8A Ta |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
12ns |
Drive Voltage (Max Rds On,Min Rds On) |
4V 10V |
Vgs (Max) |
±16V |
Fall Time (Typ) |
22 ns |
Turn-Off Delay Time |
35 ns |
Power Dissipation |
2.1W |
Case Connection |
DRAIN |
Gate to Source Voltage (Vgs) |
16V |
Drain Current-Max (Abs) (ID) |
5.2A |
Drain to Source Breakdown Voltage |
55V |
Dual Supply Voltage |
55V |
Recovery Time |
88 ns |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2 V |
Height |
1.8mm |
Length |
6.6802mm |
Width |
6.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2007 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
7.5Ohm |
Voltage - Rated DC |
60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
115mA |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
225mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Continuous Drain Current (ID) |
115mA |
Power Dissipation |
225mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
115mA Tc |
Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
40 ns |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
20V |
Operating Mode |
ENHANCEMENT MODE |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2.5 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.11mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
36mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
PowerTrench® |
Power Dissipation |
1.6W |
Factory Lead Time |
13 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.6W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
JESD-609 Code |
e3 |
Turn On Delay Time |
7 ns |
Continuous Drain Current (ID) |
4.9mA |
Threshold Voltage |
-2.2V |
Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
4ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
4 ns |
Turn-Off Delay Time |
33 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
4.9A |
Drain-source On Resistance-Max |
0.042Ohm |
Drain to Source Breakdown Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
3mm |
Width |
1.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
Series |
PowerTrench® |
JESD-609 Code |
e4 |
Element Configuration |
Single |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
4.6MOhm |
Voltage - Rated DC |
-30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-20A |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
2.5W Ta |
Contact Plating |
Tin |
Factory Lead Time |
18 Weeks |
Turn-Off Delay Time |
660 ns |
Power Dissipation |
2.5W |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
7540pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
20A Ta |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Rise Time |
9ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
380 ns |
Continuous Drain Current (ID) |
-20A |
Threshold Voltage |
-1.8V |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
30V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.8 V |
Height |
1.75mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2007 |
Series |
PowerTrench® |
Power Dissipation-Max |
2.5W Ta |
Factory Lead Time |
18 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
ECCN Code |
EAR99 |
Resistance |
12.5MOhm |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
Voltage - Rated DC |
30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
11A |
Number of Elements |
1 |
JESD-609 Code |
e4 |
Element Configuration |
Single |
Fall Time (Typ) |
9 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
9 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
12.5m Ω @ 11A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1205pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
11A Ta |
Gate Charge (Qg) (Max) @ Vgs |
16nC @ 5V |
Rise Time |
5ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
2.5W |
Continuous Drain Current (ID) |
11A |
Threshold Voltage |
1.9V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
30V |
Dual Supply Voltage |
30V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
SC-75, SOT-416 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Factory Lead Time |
5 Weeks |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
127mOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
20V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
915mA |
Pin Count |
3 |
Number of Elements |
1 |
Power Dissipation-Max |
300mW Tj |
Part Status |
Active |
Operating Mode |
ENHANCEMENT MODE |
Fall Time (Typ) |
4.4 ns |
Turn-Off Delay Time |
25 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
230m Ω @ 600mA, 4.5V |
Vgs(th) (Max) @ Id |
1.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 16V |
Current - Continuous Drain (Id) @ 25°C |
915mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
1.82nC @ 4.5V |
Rise Time |
4.4ns |
Drive Voltage (Max Rds On,Min Rds On) |
1.5V 4.5V |
Vgs (Max) |
±6V |
Power Dissipation |
300mW |
Turn On Delay Time |
3.7 ns |
Continuous Drain Current (ID) |
915mA |
Threshold Voltage |
760mV |
Gate to Source Voltage (Vgs) |
6V |
Drain to Source Breakdown Voltage |
20V |
Nominal Vgs |
760 mV |
Height |
800μm |
Length |
800μm |
Width |
1.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Renesas Electronics America |
---|---|
Pin Count |
4 |
Package / Case |
TO-3P-3, SC-65-3 |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Active |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Power Dissipation-Max |
150W Ta |
Rds On (Max) @ Id, Vgs |
240m Ω @ 12.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
25A Ta |
Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
Drain to Source Voltage (Vdss) |
500V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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