Alpha &amp; Omega Semiconductor Inc. AON7460

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Description

Specification

Processor

Manufacturer	Alpha & Omega Semiconductor Inc.
Power Dissipation (Max)	3.1W Ta 33W Tc
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	1.2A Ta 4A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Terminal Form	FLAT
Factory Lead Time	18 Weeks
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Position	DUAL
Number of Elements	1
JESD-30 Code	S-PDSO-F5
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 10V
Drain to Source Voltage (Vdss)	300V
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	830m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 25V
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Vgs (Max)	±30V
Continuous Drain Current (ID)	4A
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.83Ohm
Pulsed Drain Current-Max (IDM)	13A
DS Breakdown Voltage-Min	300V
Avalanche Energy Rating (Eas)	132 mJ
RoHS Status	ROHS3 Compliant

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Package / Case	SOT-523
Number of Pins	3
Supplier Device Package	SOT-523
Weight	2.012816mg
Operating Temperature	-55°C~150°C TJ
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FET Type	N-Channel
Factory Lead Time	14 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Max Operating Temperature	150°C
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Number of Elements	1
Number of Channels	1
Power Dissipation-Max	280mW Ta
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Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
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Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	12.3 ns
Turn-Off Delay Time	26.7 ns
Continuous Drain Current (ID)	630mA
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60.67pF @ 16V
Drain to Source Breakdown Voltage	20V
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Part Status	Active
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
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JESD-609 Code	e3
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ECCN Code	EAR99
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Halogen Free	Halogen Free
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Current - Continuous Drain (Id) @ 25°C	120mA Ta
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 5V
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Power Dissipation	1.8W
Case Connection	DRAIN
Continuous Drain Current (ID)	120mA
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Drain to Source Breakdown Voltage	600V
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Manufacturer	Infineon Technologies
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-SOT223-4
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Power Dissipation	1.8W
Factory Lead Time	10 Weeks
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	4
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Number of Channels	1
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Halogen Free	Halogen Free
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Rise Time	9ns
Drain to Source Voltage (Vdss)	60V
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Vgs (Max)	±20V
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Case Connection	DRAIN
Mount	Through Hole
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Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1997
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JESD-609 Code	e3
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Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Published	2005
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
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Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
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Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
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Packaging	Tape & Reel (TR)
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JESD-609 Code	e3
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JESD-30 Code	R-PSSO-G2
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Number of Channels	1
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Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Power Dissipation	310W
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Dual Supply Voltage	100V
Max Junction Temperature (Tj)	175°C
Nominal Vgs	4 V
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Length	10.67mm
Width	9.65mm
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Manufacturer	ON Semiconductor
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	310W Tc
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Pbfree Code	yes
Contact Plating	Tin
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Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Operating Mode	ENHANCEMENT MODE
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Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	21.8MOhm
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	FDS6675
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
JESD-609 Code	e4
Power Dissipation	2.5W
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	11A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2470pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	7.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn On Delay Time	3 ns
FET Type	P-Channel
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-2 V
Feedback Cap-Max (Crss)	500 pF
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
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Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
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Termination	SMD/SMT
ECCN Code	EAR99
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Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
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Rated 0 out of 5

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SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

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