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Manufacturer |
Alpha & Omega Semiconductor Inc. |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 Full Pack |
Current-Collector (Ic) (Max) |
23A |
Test Conditions |
400V, 5A, 60 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Series |
Alpha IGBT™ |
Part Status |
Active |
Factory Lead Time |
18 Weeks |
Power - Max |
31.2W |
Input Type |
Standard |
Reverse Recovery Time |
98ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 5A |
Gate Charge |
9.4nC |
Current - Collector Pulsed (Icm) |
20A |
Td (on/off) @ 25°C |
12ns/83ns |
Switching Energy |
140μJ (on), 40μJ (off) |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2013 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Max Power Dissipation |
288W |
Factory Lead Time |
26 Weeks |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
288W |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
40A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 20A |
Turn Off Time-Nom (toff) |
685 ns |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
-/260ns |
Switching Energy |
750μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Reach Compliance Code |
not_compliant |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
8A |
Number of Elements |
1 |
SwitchingFrequency |
-30kHz |
Test Conditions |
400V, 4A, 43 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2012 |
Series |
TrenchStop™ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Pbfree Code |
no |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
30W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Surface Mount |
Factory Lead Time |
16 Weeks |
Max Breakdown Voltage |
600V |
Turn On Time |
18 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
6A |
Reverse Recovery Time |
34 ns |
Pin Count |
3 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 4A |
Turn Off Time-Nom (toff) |
216 ns |
IGBT Type |
Trench |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
12A |
Td (on/off) @ 25°C |
12ns/116ns |
Switching Energy |
60μJ (on), 50μJ (off) |
Height |
2.41mm |
Length |
6.73mm |
Width |
6.22mm |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 31A, 10 Ω, 15V |
Turn Off Delay Time |
650 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
160W |
Packaging |
Tube |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Terminal Position |
SINGLE |
Current Rating |
60A |
Element Configuration |
Dual |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Current - Collector Pulsed (Icm) |
120A |
Input Type |
Standard |
Rise Time |
18ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.5V |
Max Collector Current |
60A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
44 ns |
Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 31A |
Turn Off Time-Nom (toff) |
1940 ns |
Gate Charge |
100nC |
Td (on/off) @ 25°C |
22ns/650ns |
Switching Energy |
450μJ (on), 6.5mJ (off) |
Case Connection |
COLLECTOR |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
570ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
22 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 33A, 5 Ω, 15V |
Turn Off Delay Time |
845 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Packaging |
Bulk |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
200W |
Current Rating |
57A |
Element Configuration |
Single |
Power Dissipation |
200W |
Case Connection |
COLLECTOR |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Max Junction Temperature (Tj) |
150°C |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
57A |
Continuous Drain Current (ID) |
57A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
30V |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Input Capacitance |
3.6nF |
Turn On Time |
62 ns |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
Continuous Collector Current |
57A |
Turn Off Time-Nom (toff) |
2170 ns |
Turn On Delay Time |
32 ns |
Gate Charge |
167nC |
Current - Collector Pulsed (Icm) |
114A |
Td (on/off) @ 25°C |
32ns/845ns |
Switching Energy |
1.8mJ (on), 19.6mJ (off) |
Height |
24.99mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Rise Time |
29ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-30 Code |
R-PSSO-G2 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Part Status |
Obsolete |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
IRG4RC10SDPBF |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
31ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
JEDEC-95 Code |
TO-252AA |
Turn On Time |
106 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Power Dissipation |
38W |
Element Configuration |
Single |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
1080ns |
Height |
1.2446mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
140 ns |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
370W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
370W |
Case Connection |
COLLECTOR |
Operating Temperature |
-55°C~150°C TJ |
Turn On Delay Time |
33 ns |
Gate Charge |
240nC |
Current - Collector Pulsed (Icm) |
150A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
59 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
75A |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
NPT |
Transistor Application |
POWER CONTROL |
Rise Time |
26ns |
Td (on/off) @ 25°C |
34ns/130ns |
Switching Energy |
360μJ (on), 380μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
Height |
24.99mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
International Rectifier |
---|---|
Input Type |
Standard |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Mfr |
International Rectifier |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Power - Max |
325 W |
Current - Collector (Ic) (Max) |
90 A |
Test Condition |
400V, 48A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
Gate Charge |
145 nC |
Current - Collector Pulsed (Icm) |
144 A |
Td (on/off) @ 25°C |
70ns/140ns |
Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
6.756g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 5 Ω, 15V |
Current Rating |
64A |
Factory Lead Time |
4 Weeks |
Packaging |
Tube |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Turn Off Delay Time |
110 ns |
Element Configuration |
Single |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
64A |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Reverse Recovery Time |
112 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
Power Dissipation |
500W |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
165 ns |
IGBT Type |
NPT |
Gate Charge |
220nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/110ns |
Switching Energy |
2.3mJ (on), 1.1mJ (off) |
Height |
29mm |
Length |
20mm |
Width |
5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 12A, 10 Ω, 15V |
Turn Off Delay Time |
96 ns |
Current Rating |
54A |
Operating Temperature |
-55°C~150°C TJ |
Published |
2002 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
167W |
Contact Plating |
Tin |
Factory Lead Time |
4 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
17 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
16ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
54A |
Reverse Recovery Time |
30 ns |
Turn On Time |
33 ns |
Continuous Collector Current |
60A |
Turn Off Time-Nom (toff) |
180 ns |
Base Part Number |
HGTG12N60 |
Gate Charge |
78nC |
Current - Collector Pulsed (Icm) |
96A |
Td (on/off) @ 25°C |
17ns/96ns |
Switching Energy |
55μJ (on), 50μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
167W |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2012 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
535W |
Pin Count |
3 |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Current - Collector Pulsed (Icm) |
200A |
Power - Max |
535W |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Reverse Recovery Time |
240 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
313nC |
Td (on/off) @ 25°C |
116ns/286ns |
Switching Energy |
3.4mJ (on), 1.1mJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Polarity/Channel Type |
N-CHANNEL |
Lead Free |
Lead Free |
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
200W |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Turn On Delay Time |
29.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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