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Manufacturer |
Central Semiconductor Corp |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Package Shape |
RECTANGULAR |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Terminal Finish |
Tin/Lead (Sn/Pb) |
HTS Code |
8541.21.00.95 |
Subcategory |
Other Transistors |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Surface Mount |
YES |
Pin Count |
3 |
Reach Compliance Code |
unknown |
JESD-30 Code |
R-PDSO-G3 |
Qualification Status |
Not Qualified |
Number of Elements |
1 |
Configuration |
SINGLE |
Operating Mode |
DEPLETION MODE |
Transistor Application |
AMPLIFIER |
Polarity/Channel Type |
N-CHANNEL |
DS Breakdown Voltage-Min |
35 V |
FET Technology |
JUNCTION |
Feedback Cap-Max (Crss) |
1.2 pF |
Highest Frequency Band |
VERY HIGH FREQUENCY BAND |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
500 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
4.5 V @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
25 V |
Resistance - RDS(On) |
3 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package |
TO-92-3 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
625 mW |
FET Type |
N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
2 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
500 mV @ 1 µA |
Voltage - Breakdown (V(BR)GSS) |
35 V |
Resistance - RDS(On) |
100 Ohms |
In stock
Manufacturer |
Fairchild |
---|---|
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SOT-23-3 |
Base Product Number |
MMBFJ1 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Power - Max |
225 mW |
FET Type |
P-Channel |
Current - Drain (Idss) @ Vds (Vgs=0) |
7 mA @ 15 V |
Voltage - Cutoff (VGS off) @ Id |
3 V @ 10 nA |
Voltage - Breakdown (V(BR)GSS) |
30 V |
Resistance - RDS(On) |
125 Ohms |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
20 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOT-23-3 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
30 mA |
Gate-Source Cutoff Voltage |
– 2 V |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK170 |
Technology |
Si |
Configuration |
Single |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
TO-71-6 |
Mounting Style |
Through Hole |
Drain-Source Current at Vgs=0 |
6.5 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Technology |
Si |
Configuration |
Dual |
In stock
Manufacturer |
Linearin |
---|---|
Package / Case |
SOIC-8 |
Mounting Style |
SMD/SMT |
Drain-Source Current at Vgs=0 |
12 mA |
Gate-Source Cutoff Voltage |
6 mV |
Id - Continuous Drain Current |
2 mA |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
400 mW |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
40 V |
Vgs - Gate-Source Breakdown Voltage |
– 40 V |
Series |
LSK389 |
Configuration |
Dual |
In stock
Manufacturer |
NEC |
---|---|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP |
Manufacturer Package Code |
PLSP0003ZD-A3 |
Manufacturer Part Number |
2SK425-T1B-A |
Package Description |
, |
Part Life Cycle Code |
Obsolete |
Part Package Code |
MM |
Reflow Temperature-Max (s) |
NOT SPECIFIED |
Risk Rank |
5.83 |
Rohs Code |
Yes |
Pbfree Code |
Yes |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
Pin Count |
3 |
Brand Name |
Renesas |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-3 |
Mounting Style |
SMD/SMT |
Id - Continuous Drain Current |
47 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
242 W |
Rds On - Drain-Source Resistance |
33 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
In stock
Manufacturer |
Qorvo |
---|---|
Package / Case |
TO-247-4 |
Mounting Style |
Through Hole |
Id - Continuous Drain Current |
28 A |
Maximum Operating Temperature |
+ 175 C |
Minimum Operating Temperature |
– 55 C |
Pd - Power Dissipation |
155 W |
Rds On - Drain-Source Resistance |
74 mOhms |
Transistor Polarity |
N-Channel |
Vds - Drain-Source Breakdown Voltage |
750 V |
Series |
UJ4C |
Technology |
SiC |
Configuration |
Single |
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