Diodes Incorporated DMN3070SSN-7

SKU: DMN3070SSN-7-11

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Manufacturer Part :
DMN3070SSN-7
Manufacturer :
Diodes Incorporated
Package :
TO-236-3, SC-59, SOT-23-3
RoHS :
ROHS3 Compliant
DMN3070SSN-7 Datasheet :

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Description

Specification

Processor

Manufacturer

Diodes Incorporated

Operating Temperature

-55°C~150°C TJ

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Number of Pins

59

Weight

7.994566mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4.2A Ta

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Number of Elements

1

Power Dissipation (Max)

780mW Ta

Terminal Form

GULL WING

Turn Off Delay Time

4.4 ns

Packaging

Cut Tape (CT)

Published

2010

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Terminal Position

DUAL

Mount

Surface Mount

Factory Lead Time

16 Weeks

Drain to Source Voltage (Vdss)

30V

Number of Channels

1

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

4.3 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

40m Ω @ 4.2A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

697pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

13.2nC @ 10V

Rise Time

20.1ns

Vgs (Max)

±20V

Fall Time (Typ)

4.1 ns

JESD-30 Code

R-PDSO-G3

Continuous Drain Current (ID)

4.2A

Gate to Source Voltage (Vgs)

20V

Drain-source On Resistance-Max

0.04Ohm

DS Breakdown Voltage-Min

30V

Height

1.3mm

Length

3.1mm

Width

1.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

Element Configuration

Single

RoHS Status

ROHS3 Compliant

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