Diodes Incorporated DMT10H015LK3-13

SKU: DMT10H015LK3-13-11

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Manufacturer Part :
DMT10H015LK3-13
Manufacturer :
Diodes Incorporated
Package :
RoHS :
ROHS3 Compliant
DMT10H015LK3-13 Datasheet :

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Description

Specification

Processor

Manufacturer

Diodes Incorporated

Published

2017

Mounting Type

Surface Mount

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

50A Tc

Drive Voltage (Max Rds On, Min Rds On)

6V 10V

Number of Elements

1

Power Dissipation (Max)

2.9W Ta

Operating Temperature

-55°C~150°C TJ

Terminal Position

SINGLE

Factory Lead Time

23 Weeks

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

HIGH RELIABILITY

Packaging

Tape & Reel (TR)

Terminal Form

GULL WING

Vgs(th) (Max) @ Id

3.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

15m Ω @ 20A, 10V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Drain to Source Voltage (Vdss)

100V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

30A

Drain-source On Resistance-Max

0.018Ohm

Pulsed Drain Current-Max (IDM)

50A

DS Breakdown Voltage-Min

100V

Avalanche Energy Rating (Eas)

85 mJ

RoHS Status

ROHS3 Compliant

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