Diodes Incorporated DMTH6010SCT

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Description

Specification

Processor

Manufacturer	Diodes Incorporated
Part Status	Active
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Current - Continuous Drain (Id) @ 25℃	100A Tc
Drive Voltage (Max Rds On, Min Rds On)	10V
Power Dissipation (Max)	2.8W Ta 125W Tc
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2016
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Pbfree Code	yes
Factory Lead Time	24 Weeks
ECCN Code	EAR99
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Terminal Finish	Matte Tin (Sn)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1940pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	36.3nC @ 10V
Drain to Source Voltage (Vdss)	60V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
RoHS Status	ROHS3 Compliant

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Diodes Incorporated BSS138-7-F

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SKU: BSS138-7-F-11

Manufacturer	Diodes Incorporated
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	7.994566mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
JESD-609 Code	e3
Pbfree Code	yes
Number of Channels	1
Factory Lead Time	16 Weeks
Number of Terminations	3
ECCN Code	EAR99
Resistance	3.5Ohm
Voltage - Rated DC	50V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	200mA
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Part Status	Active
Voltage	50V
Vgs (Max)	±20V
Fall Time (Typ)	25 ns
Current	2A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Power Dissipation-Max	300mW Ta
Element Configuration	Single
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	200mA
Threshold Voltage	1.2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	50V
Nominal Vgs	1.2 V
Feedback Cap-Max (Crss)	8 pF
Height	1mm
Length	2.9mm
Width	1.3mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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SKU: BSP135H6327XTSA1-11

Manufacturer	Infineon Technologies
Part Status	Active
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	SIPMOS®
JESD-609 Code	e3
Element Configuration	Single
Factory Lead Time	10 Weeks
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Voltage	600V
Power Dissipation-Max	1.8W Ta
Pbfree Code	yes
Current	12A
Fall Time (Typ)	182 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	5.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id	1V @ 94μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	146pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120mA Ta
Gate Charge (Qg) (Max) @ Vgs	4.9nC @ 5V
Rise Time	5.6ns
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Power Dissipation	1.8W
Case Connection	DRAIN
Continuous Drain Current (ID)	120mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	600V
Drain to Source Breakdown Voltage	600V
Recovery Time	130 ns
FET Feature	Depletion Mode
Height	1.5mm
Length	6.5mm
Width	3.5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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Infineon Technologies BSS131H6327XTSA1

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SKU: BSS131H6327XTSA1-11

Manufacturer	Infineon Technologies
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	SIPMOS®
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Part Status	Active
Termination	SMD/SMT
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Voltage	240V
Power Dissipation-Max	360mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	20V
Rds On (Max) @ Id, Vgs	14 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 56μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	77pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110mA Ta
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 10V
Rise Time	3.1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	13.7 ns
Continuous Drain Current (ID)	100mA
Turn On Delay Time	3.3 ns
Power Dissipation	360mW
Max Dual Supply Voltage	240V
Drain to Source Breakdown Voltage	240V
Dual Supply Voltage	240V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.4 V
Feedback Cap-Max (Crss)	4.2 pF
Height	1.1mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

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SKU: 2N7002LT1G-11

Manufacturer	ON Semiconductor
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Element Configuration	Single
Part Status	Active
Number of Terminations	3
ECCN Code	EAR99
Resistance	7.5Ohm
Voltage - Rated DC	60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	115mA
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Continuous Drain Current (ID)	115mA
Power Dissipation	225mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	115mA Tc
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	40 ns
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Operating Mode	ENHANCEMENT MODE
Drain to Source Breakdown Voltage	60V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	2.5 V
Feedback Cap-Max (Crss)	5 pF
Height	1.11mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
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SKU: FDB33N25TM-11

Manufacturer	ON Semiconductor
Power Dissipation	235W
Mount	Surface Mount
Mounting Type	Surface Mount
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	UniFET™
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	94MOhm
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	235W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Contact Plating	Tin
Factory Lead Time	7 Weeks
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	33A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	94m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2135pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	230ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	120 ns
Turn On Delay Time	35 ns
Case Connection	DRAIN
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Nominal Vgs	3 V
Height	4.83mm
Length	10.67mm
Width	11.33mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	N-Channel
Lead Free	Lead Free

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Rated 0 out of 5

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SKU: FDC610PZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
Series	PowerTrench®
Power Dissipation	1.6W
Factory Lead Time	13 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.6W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
JESD-609 Code	e3
Turn On Delay Time	7 ns
Continuous Drain Current (ID)	4.9mA
Threshold Voltage	-2.2V
Rds On (Max) @ Id, Vgs	42m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1005pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	4ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	4 ns
Turn-Off Delay Time	33 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Gate to Source Voltage (Vgs)	25V
Drain Current-Max (Abs) (ID)	4.9A
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	-30V
Max Junction Temperature (Tj)	150°C
Height	1.1mm
Length	3mm
Width	1.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDS6675BZ

Rated 0 out of 5

In stock

SKU: FDS6675BZ-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	PowerTrench®
Operating Mode	ENHANCEMENT MODE
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	21.8MOhm
Terminal Position	DUAL
Terminal Form	GULL WING
Base Part Number	FDS6675
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
JESD-609 Code	e4
Power Dissipation	2.5W
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	11A
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2470pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Rise Time	7.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	60 ns
Turn On Delay Time	3 ns
FET Type	P-Channel
Threshold Voltage	-2V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	-30V
Nominal Vgs	-2 V
Feedback Cap-Max (Crss)	500 pF
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDS6681Z

Rated 0 out of 5

In stock

SKU: FDS6681Z-11

Manufacturer	ON Semiconductor
Part Status	Active
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	PowerTrench®
JESD-609 Code	e4
Element Configuration	Single
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	4.6MOhm
Voltage - Rated DC	-30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-20A
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta
Contact Plating	Tin
Factory Lead Time	18 Weeks
Turn-Off Delay Time	660 ns
Power Dissipation	2.5W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±25V
Fall Time (Typ)	380 ns
Continuous Drain Current (ID)	-20A
Threshold Voltage	-1.8V
Operating Mode	ENHANCEMENT MODE
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.8 V
Height	1.75mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Turn On Delay Time	20 ns
Lead Free	Lead Free

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ON Semiconductor FDS6690A

Rated 0 out of 5

In stock

SKU: FDS6690A-11

Manufacturer	ON Semiconductor
Pbfree Code	yes
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	PowerTrench®
Power Dissipation-Max	2.5W Ta
Factory Lead Time	18 Weeks
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	12.5MOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	30V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	11A
Number of Elements	1
JESD-609 Code	e4
Element Configuration	Single
Fall Time (Typ)	9 ns
Turn-Off Delay Time	28 ns
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Continuous Drain Current (ID)	11A
Threshold Voltage	1.9V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Dual Supply Voltage	30V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

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ON Semiconductor FDV304P

Rated 0 out of 5

In stock

SKU: FDV304P-11

Manufacturer	ON Semiconductor
Element Configuration	Single
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Number of Terminations	3
Termination	SMD/SMT
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	1.5Ohm
Voltage - Rated DC	-25V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-460mA
Time@Peak Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	25V
Power Dissipation-Max	350mW Ta
Contact Plating	Tin
Factory Lead Time	10 Weeks
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	460mA
Turn On Delay Time	7 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	63pF @ 10V
Current - Continuous Drain (Id) @ 25°C	460mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8 ns
Operating Mode	ENHANCEMENT MODE
Current	46A
Threshold Voltage	-860mV
Gate to Source Voltage (Vgs)	-8V
Drain to Source Breakdown Voltage	-25V
Dual Supply Voltage	-25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	-860 mV
Height	1.11mm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Power Dissipation	350mW
Lead Free	Lead Free

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ON Semiconductor NDS9407

Rated 0 out of 5

In stock

SKU: NDS9407-11

Manufacturer	ON Semiconductor
Operating Mode	ENHANCEMENT MODE
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	130mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
JESD-609 Code	e3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Termination	SMD/SMT
ECCN Code	EAR99
Voltage - Rated DC	-60V
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-3.3A
Number of Elements	1
Power Dissipation-Max	2.5W Ta
Element Configuration	Single
Contact Plating	Tin
Factory Lead Time	11 Weeks
Continuous Drain Current (ID)	-3A
Threshold Voltage	-1.6V
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	732pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3A Ta
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	10 ns
Turn On Delay Time	8 ns
Power Dissipation	2.5W
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Drain to Source Breakdown Voltage	-60V
Dual Supply Voltage	60V
Nominal Vgs	-1.6 V
Height	1.5mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
FET Type	P-Channel
Lead Free	Lead Free

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Renesas Electronics America RJK5015DPK-00#T0

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