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Manufacturer |
Fairchild |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3PN |
Base Product Number |
FGA3060 |
Mfr |
Fairchild Semiconductor |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Input Type |
Standard |
Power - Max |
176 W |
Voltage - Collector Emitter Breakdown (Max) |
600 V |
Current - Collector (Ic) (Max) |
60 A |
Test Condition |
400V, 30A, 6Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
37.4 nC |
Current - Collector Pulsed (Icm) |
90 A |
Td (on/off) @ 25°C |
12ns/42.4ns |
Switching Energy |
960µJ (on), 165µJ (off) |
Reverse Recovery Time (trr) |
26 ns |
In stock
Manufacturer |
Infineon |
---|---|
Base Product Number |
SIGC84 |
Mfr |
Infineon Technologies |
Package |
Bulk |
Product Status |
Active |
Series |
TrenchStop™ |
Input Type |
Standard |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
Current - Collector Pulsed (Icm) |
225 A |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.35kV |
Number of Elements |
1 |
ECCN Code |
EAR99 |
Factory Lead Time |
16 Weeks |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Collector Emitter Voltage (VCEO) |
1.35kV |
Max Collector Current |
40A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
288W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Max Power Dissipation |
288W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
1350V |
Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 20A |
Turn Off Time-Nom (toff) |
450 ns |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
-/235ns |
Switching Energy |
950μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1998 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
110 ns |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
160W |
Current Rating |
40A |
Element Configuration |
Single |
Power Dissipation |
160W |
Case Connection |
COLLECTOR |
Packaging |
Bulk |
Turn On Delay Time |
54 ns |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
160A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
40A |
Turn Off Time-Nom (toff) |
330 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
57ns |
Td (on/off) @ 25°C |
54ns/110ns |
Switching Energy |
710μJ (on), 350μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
120ns |
Height |
24.6mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
720V, 28A, 5 Ω, 15V |
Turn Off Delay Time |
110 ns |
Element Configuration |
Dual |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Terminal Position |
SINGLE |
Current Rating |
51A |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
200W |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
204A |
Turn On Delay Time |
29 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
26ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.7V |
Max Collector Current |
51A |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
54 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 28A |
Turn Off Time-Nom (toff) |
370 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
29ns/110ns |
Switching Energy |
190μJ (on), 1.06mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
220ns |
Height |
20.3mm |
Length |
15.875mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-274AA |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 60A, 5 Ω, 15V |
Turn Off Delay Time |
245 ns |
Power Dissipation |
350W |
Factory Lead Time |
13 Weeks |
Published |
1999 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
350W |
Current Rating |
85A |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Continuous Collector Current |
85A |
Turn Off Time-Nom (toff) |
503 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
94ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
85A |
Reverse Recovery Time |
82 ns |
Turn On Time |
179 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Junction Temperature (Tj) |
150°C |
Input Type |
Standard |
Turn On Delay Time |
90 ns |
Gate Charge |
340nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
90ns/245ns |
Switching Energy |
3.26mJ (on), 2.27mJ (off) |
Height |
24.8mm |
Length |
16.1mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 10 Ω, 15V |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Packaging |
Tube |
Published |
2004 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
454W |
Rise Time-Max |
90ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Turn Off Delay Time |
200 ns |
Turn On Delay Time |
50 ns |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
50ns/200ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
140A |
Reverse Recovery Time |
155 ns |
JEDEC-95 Code |
TO-247AD |
Turn On Time |
120 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
310 ns |
IGBT Type |
Trench |
Gate Charge |
150nC |
Power - Max |
454W |
Transistor Application |
POWER CONTROL |
Switching Energy |
2.47mJ (on), 2.16mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
80ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.13mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 48A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Factory Lead Time |
26 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
330W |
Rise Time-Max |
56ns |
Element Configuration |
Single |
Power Dissipation |
134W |
Packaging |
Tube |
Power - Max |
330W |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Max Collector Current |
100A |
Reverse Recovery Time |
115 ns |
Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 48A |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
144A |
Td (on/off) @ 25°C |
60ns/145ns |
Switching Energy |
625μJ (on), 1.28mJ (off) |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.9V |
Fall Time-Max (tf) |
46ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.31mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
130 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
390W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
390W |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Gate Charge |
205nC |
Current - Collector Pulsed (Icm) |
150A |
Rise Time |
10ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.85V |
Max Collector Current |
75A |
Reverse Recovery Time |
42 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
39 ns |
Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 50A |
Turn Off Time-Nom (toff) |
161 ns |
IGBT Type |
NPT |
Turn On Delay Time |
30 ns |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
30ns/130ns |
Switching Energy |
255μJ (on), 375μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
20ns |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Bulk |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 33A, 3.3 Ω, 15V |
Turn Off Delay Time |
140 ns |
Input Type |
Standard |
Factory Lead Time |
14 Weeks |
Published |
2004 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
370W |
Current Rating |
75A |
Element Configuration |
Single |
Power Dissipation |
370W |
Case Connection |
COLLECTOR |
Operating Temperature |
-55°C~150°C TJ |
Turn On Delay Time |
33 ns |
Gate Charge |
240nC |
Current - Collector Pulsed (Icm) |
150A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
75A |
Reverse Recovery Time |
50 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
59 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
75A |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
NPT |
Transistor Application |
POWER CONTROL |
Rise Time |
26ns |
Td (on/off) @ 25°C |
34ns/130ns |
Switching Energy |
360μJ (on), 380μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Fall Time-Max (tf) |
65ns |
Height |
24.99mm |
Length |
15.87mm |
Width |
5.3086mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
International Rectifier |
---|---|
Input Type |
Standard |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247AD |
Mfr |
International Rectifier |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Power - Max |
325 W |
Current - Collector (Ic) (Max) |
90 A |
Test Condition |
400V, 48A, 10Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 48A |
Gate Charge |
145 nC |
Current - Collector Pulsed (Icm) |
144 A |
Td (on/off) @ 25°C |
70ns/140ns |
Switching Energy |
1.7mJ (on), 1mJ (off) |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
6.756g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 5 Ω, 15V |
Current Rating |
64A |
Factory Lead Time |
4 Weeks |
Packaging |
Tube |
Published |
2008 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
500W |
Turn Off Delay Time |
110 ns |
Element Configuration |
Single |
Max Junction Temperature (Tj) |
150°C |
Continuous Collector Current |
64A |
Turn On Delay Time |
15 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Reverse Recovery Time |
112 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
45 ns |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
Power Dissipation |
500W |
Input Type |
Standard |
Turn Off Time-Nom (toff) |
165 ns |
IGBT Type |
NPT |
Gate Charge |
220nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/110ns |
Switching Energy |
2.3mJ (on), 1.1mJ (off) |
Height |
29mm |
Length |
20mm |
Width |
5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 5A, 25 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Contact Plating |
Tin |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
167W |
Current Rating |
21A |
Packaging |
Tube |
Power Dissipation |
167W |
Turn Off Time-Nom (toff) |
357 ns |
IGBT Type |
NPT |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
21A |
Reverse Recovery Time |
65 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Max Breakdown Voltage |
600V |
Turn On Time |
35 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 5A |
Continuous Collector Current |
21A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Gate Charge |
53nC |
Current - Collector Pulsed (Icm) |
40A |
Td (on/off) @ 25°C |
22ns/160ns |
Switching Energy |
450μJ (on), 390μJ (off) |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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