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| Manufacturer |
International Rectifier |
|---|---|
| Maximum Operating Temperature (°C) |
150 |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Automotive |
Yes |
| ECCN (US) |
EAR 99 |
| EU RoHS |
Compliant with Exemption |
| HTS |
8541.29.00.95 |
| Lead Shape |
Gull-wing |
| Maximum Collector-Emitter Voltage (V) |
600 |
| Maximum Continuous Collector Current (A) |
34 |
| Maximum Gate Emitter Leakage Current (uA) |
0.1 |
| SVHC |
Yes |
| Surface Mount |
YES |
| Maximum Power Dissipation (mW) |
100 |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Surface Mount |
| Package Height |
4.83(Max) |
| Package Length |
10.67(Max) |
| Package Shape |
RECTANGULAR |
| Package Width |
9.65(Max) |
| PCB changed |
2 |
| PPAP |
Unknown |
| Standard Package Name |
TO-263 |
| Supplier Package |
D2PAK |
| Maximum Gate Emitter Voltage (V) |
±20 |
| SVHC Exceeds Threshold |
Yes |
| JESD-30 Code |
R-PSSO-G2 |
| Number of Elements |
1 |
| Packaging |
Tape and Reel |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Subcategory |
Insulated Gate BIP Transistors |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
compliant |
| Pin Count |
3 |
| Tab |
Tab |
| Typical Collector Emitter Saturation Voltage (V) |
1.84 |
| Configuration |
Single |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-263AB |
| Channel Type |
N |
| Power Dissipation-Max (Abs) |
100 W |
| Collector Current-Max (IC) |
34 A |
| Collector-Emitter Voltage-Max |
600 V |
| Gate-Emitter Voltage-Max |
20 V |
| Gate-Emitter Thr Voltage-Max |
6 V |
| Fall Time-Max (tf) |
590 ns |
In stock
| Manufacturer |
Infineon |
|---|---|
| Base Product Number |
SIGC84 |
| Mfr |
Infineon Technologies |
| Package |
Bulk |
| Product Status |
Active |
| Series |
TrenchStop™ |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Current - Collector Pulsed (Icm) |
225 A |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.35kV |
| Number of Elements |
1 |
| ECCN Code |
EAR99 |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Published |
2013 |
| Series |
TrenchStop® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Collector Emitter Voltage (VCEO) |
1.35kV |
| Max Collector Current |
40A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
288W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Max Power Dissipation |
288W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1350V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
450 ns |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
-/235ns |
| Switching Energy |
950μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Reach Compliance Code |
not_compliant |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
8A |
| Number of Elements |
1 |
| SwitchingFrequency |
-30kHz |
| Test Conditions |
400V, 4A, 43 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2012 |
| Series |
TrenchStop™ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
no |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
30W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
16 Weeks |
| Max Breakdown Voltage |
600V |
| Turn On Time |
18 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
75W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
6A |
| Reverse Recovery Time |
34 ns |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 4A |
| Turn Off Time-Nom (toff) |
216 ns |
| IGBT Type |
Trench |
| Gate Charge |
27nC |
| Current - Collector Pulsed (Icm) |
12A |
| Td (on/off) @ 25°C |
12ns/116ns |
| Switching Energy |
60μJ (on), 50μJ (off) |
| Height |
2.41mm |
| Length |
6.73mm |
| Width |
6.22mm |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
ROHS3 Compliant |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
1998 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 20A, 10 Ω, 15V |
| Turn Off Delay Time |
110 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Factory Lead Time |
14 Weeks |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
160W |
| Current Rating |
40A |
| Element Configuration |
Single |
| Power Dissipation |
160W |
| Case Connection |
COLLECTOR |
| Packaging |
Bulk |
| Turn On Delay Time |
54 ns |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
160A |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
92 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
| Max Junction Temperature (Tj) |
150°C |
| Continuous Collector Current |
40A |
| Turn Off Time-Nom (toff) |
330 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
57ns |
| Td (on/off) @ 25°C |
54ns/110ns |
| Switching Energy |
710μJ (on), 350μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
120ns |
| Height |
24.6mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Element Configuration |
Dual |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 41A, 5 Ω, 15V |
| Turn Off Delay Time |
650 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| JESD-609 Code |
e3 |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
70A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Current - Collector Pulsed (Icm) |
140A |
| Td (on/off) @ 25°C |
33ns/650ns |
| Turn On Delay Time |
33 ns |
| Rise Time |
30ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.36V |
| Max Collector Current |
70A |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.36V @ 15V, 41A |
| Turn Off Time-Nom (toff) |
1700 ns |
| Gate Charge |
180nC |
| Case Connection |
COLLECTOR |
| Power Dissipation |
200W |
| Switching Energy |
720μJ (on), 8.27mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
600ns |
| Height |
20.2946mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2004 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 33A, 5 Ω, 15V |
| Turn Off Delay Time |
845 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Packaging |
Bulk |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
200W |
| Current Rating |
57A |
| Element Configuration |
Single |
| Power Dissipation |
200W |
| Case Connection |
COLLECTOR |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Max Junction Temperature (Tj) |
150°C |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
57A |
| Continuous Drain Current (ID) |
57A |
| JEDEC-95 Code |
TO-247AC |
| Gate to Source Voltage (Vgs) |
30V |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Input Capacitance |
3.6nF |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 33A |
| Continuous Collector Current |
57A |
| Turn Off Time-Nom (toff) |
2170 ns |
| Turn On Delay Time |
32 ns |
| Gate Charge |
167nC |
| Current - Collector Pulsed (Icm) |
114A |
| Td (on/off) @ 25°C |
32ns/845ns |
| Switching Energy |
1.8mJ (on), 19.6mJ (off) |
| Height |
24.99mm |
| Length |
15.875mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Rise Time |
29ns |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-274AA |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 60A, 5 Ω, 15V |
| Turn Off Delay Time |
245 ns |
| Power Dissipation |
350W |
| Factory Lead Time |
13 Weeks |
| Published |
1999 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
350W |
| Current Rating |
85A |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Continuous Collector Current |
85A |
| Turn Off Time-Nom (toff) |
503 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
94ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
85A |
| Reverse Recovery Time |
82 ns |
| Turn On Time |
179 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
| Max Junction Temperature (Tj) |
150°C |
| Input Type |
Standard |
| Turn On Delay Time |
90 ns |
| Gate Charge |
340nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
90ns/245ns |
| Switching Energy |
3.26mJ (on), 2.27mJ (off) |
| Height |
24.8mm |
| Length |
16.1mm |
| Width |
5.3mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 8A, 100 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Part Status |
Obsolete |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
38W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
IRG4RC10SDPBF |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Gate Charge |
15nC |
| Current - Collector Pulsed (Icm) |
18A |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
31ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
28 ns |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
106 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
1780 ns |
| Power Dissipation |
38W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
76ns/815ns |
| Switching Energy |
310μJ (on), 3.28mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
1080ns |
| Height |
1.2446mm |
| Length |
6.7056mm |
| Width |
6.22mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
454W |
| Rise Time-Max |
90ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Turn Off Delay Time |
200 ns |
| Turn On Delay Time |
50 ns |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
50ns/200ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
140A |
| Reverse Recovery Time |
155 ns |
| JEDEC-95 Code |
TO-247AD |
| Turn On Time |
120 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
310 ns |
| IGBT Type |
Trench |
| Gate Charge |
150nC |
| Power - Max |
454W |
| Transistor Application |
POWER CONTROL |
| Switching Energy |
2.47mJ (on), 2.16mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.13mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2007 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 48A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Input Type |
Standard |
| Factory Lead Time |
26 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
330W |
| Rise Time-Max |
56ns |
| Element Configuration |
Single |
| Power Dissipation |
134W |
| Packaging |
Tube |
| Power - Max |
330W |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
115 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 48A |
| Gate Charge |
140nC |
| Current - Collector Pulsed (Icm) |
144A |
| Td (on/off) @ 25°C |
60ns/145ns |
| Switching Energy |
625μJ (on), 1.28mJ (off) |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.9V |
| Fall Time-Max (tf) |
46ns |
| Height |
20.7mm |
| Length |
15.87mm |
| Width |
5.31mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Finish |
Tin (Sn) |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Part Status |
Active |
| Pbfree Code |
yes |
| JESD-609 Code |
e3 |
| Published |
2013 |
| Max Power Dissipation |
454W |
| Packaging |
Tube |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Pins |
3 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
20 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
| RoHS Status |
ROHS3 Compliant |
| REACH SVHC |
No SVHC |
| Switching Energy |
1.6mJ (on), 1.1mJ (off) |
| Td (on/off) @ 25°C |
18ns/145ns |
| Gate Charge |
212nC |
| IGBT Type |
Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reverse Recovery Time |
136 ns |
| Max Collector Current |
160A |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Power - Max |
454W |
| Input Type |
Standard |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 10 Ω, 15V |
| Turn Off Delay Time |
118 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
200W |
| Current Rating |
60A |
| Base Part Number |
STGW30 |
| Pin Count |
3 |
| Packaging |
Tube |
| Power Dissipation |
200W |
| Turn Off Time-Nom (toff) |
189 ns |
| Gate Charge |
102nC |
| Turn On Delay Time |
29.5 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
40 ns |
| JEDEC-95 Code |
TO-247AC |
| Turn On Time |
42.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
29.5ns/118ns |
| Switching Energy |
305μJ (on), 181μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
20.15mm |
| Length |
15.75mm |
| Width |
5.15mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
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