Infineon BSS306NH6327XT

SKU: BSS306NH6327XT-9

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Manufacturer Part :
BSS306NH6327XT
Manufacturer :
Infineon
Package :
4-SMD, Flat Lead Exposed Pad
RoHS :
BSS306NH6327XT Datasheet :
BSS306NH6327XT

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Description

Specification

Processor

Manufacturer

Infineon

Mfr

OSRAM Opto (ams OSRAM)

Supplier Device Package

5630

Mounting Style

SMD/SMT

Thermal Resistance of Package

33°C/W

Brand

Infineon Technologies

Channel Mode

Enhancement

Factory Pack Quantity:Factory Pack Quantity

9000

Forward Transconductance - Min

5 S

Height - Seated (Max)

0.034 (0.87mm)

Id - Continuous Drain Current

2.3 A

Typical Turn-On Delay Time

4.4 ns

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

– 55 C

Package

Tape & Reel (TR)

Part # Aliases

SP000928940 BSS306NH6327XTSA1

Pd - Power Dissipation

500 mW

Product Status

Obsolete

Qg - Gate Charge

1.5 nC

Qualification

AEC-Q101

Rds On - Drain-Source Resistance

57 mOhms

Transistor Polarity

N-Channel

Typical Turn-Off Delay Time

8.3 ns

Package / Case

4-SMD, Flat Lead Exposed Pad

Mounting Type

Surface Mount

Viewing Angle

120°

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.6 V

Packaging

MouseReel

Series

DURIS® E 5

Color

White

Subcategory

MOSFETs

Technology

Si

Configuration

Single

Number of Channels

1 Channel

Voltage - Forward (Vf) (Typ)

3.15V

Current - Test

120mA

Lumens/Watt @ Current - Test

135 lm/W

Unit Weight

0.000282 oz

CRI (Color Rendering Index)

80

Rise Time

2.3 ns

Current - Max

180mA

Product Type

MOSFET

Transistor Type

1 N-Channel

Flux @ 25°C, Current - Test

51lm (44lm ~ 57lm)

Product Category

MOSFET

Height

1.1 mm

Length

2.9 mm

Vgs - Gate-Source Voltage

– 20 V, + 20 V

Width

1.3 mm

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