Infineon IGC114T170S8RMX1SA2

SKU: IGC114T170S8RMX1SA2-9

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Manufacturer Part :
IGC114T170S8RMX1SA2
Manufacturer :
Infineon
Package :
-
RoHS :
IGC114T170S8RMX1SA2 Datasheet :
IGC114T170S8RMX1SA2

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Free

  • Courier delivery

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2-3 Days

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2-3 Days

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

Infineon Technologies AG

Maximum Gate Emitter Leakage Current (uA)

0.3

Surface Mount

YES

Number of Terminals

5

Transistor Element Material

SILICON

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

PCB changed

3

Factory Lead Time

12 Weeks

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

175

Minimum Operating Temperature (°C)

-40

Package Height

0.19

Package Length

12.08

Package Shape

RECTANGULAR

Package Width

9.47

Maximum Collector-Emitter Voltage (V)

1700

PPAP

No

Reach Compliance Code

compliant

Pin Count

3

Packaging

Wafer

Part Status

Active

ECCN Code

EAR99

Terminal Position

UPPER

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Supplier Package

Die

Typical Collector Emitter Saturation Voltage (V)

1.9

JESD-30 Code

R-XUUC-N5

Number of Elements

1

Configuration

Single

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Channel Type

N

Collector Current-Max (IC)

100 A

Collector-Emitter Voltage-Max

1700 V

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