Infineon IPA100N08N3 G

SKU: IPA100N08N3 G-9

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Manufacturer Part :
IPA100N08N3 G
Manufacturer :
Infineon
Package :
-
RoHS :
IPA100N08N3 G Datasheet :
IPA100N08N3 G

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Description

Specification

Processor

Manufacturer

Infineon Technologies AG

Terminal Finish

Matte Tin (Sn)

Transistor Element Material

SILICON

Drain Current-Max (ID)

40 A

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Manufacturer Part Number

IPA100N08N3G

Moisture Sensitivity Level

1

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Package Description

FLANGE MOUNT, R-PSFM-T3

Part Life Cycle Code

Obsolete

Part Package Code

TO-220AB

Reflow Temperature-Max (s)

NOT SPECIFIED

Risk Rank

5.8

Rohs Code

Yes

JESD-609 Code

e3

Pbfree Code

Yes

ECCN Code

EAR99

Number of Terminals

3

Surface Mount

NO

Case Connection

ISOLATED

Transistor Application

SWITCHING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Terminal Position

SINGLE

Subcategory

FET General Purpose Power

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

Drain Current-Max (Abs) (ID)

40 A

Drain-source On Resistance-Max

0.01 Ω

Pulsed Drain Current-Max (IDM)

160 A

DS Breakdown Voltage-Min

80 V

Avalanche Energy Rating (Eas)

110 mJ

FET Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Form

THROUGH-HOLE

Power Dissipation-Max (Abs)

35 W

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