Infineon IRG7IA19UPBF

SKU: IRG7IA19UPBF-9

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Manufacturer Part :
IRG7IA19UPBF
Manufacturer :
Infineon
Package :
-
RoHS :
IRG7IA19UPBF Datasheet :
IRG7IA19UPBF

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Free

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2-3 Days

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  • Warranty 1 year
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Description

Specification

Processor

Manufacturer

International Rectifier

Maximum Operating Temperature (°C)

150

Transistor Element Material

SILICON

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

Lead Shape

Through Hole

Maximum Collector-Emitter Voltage (V)

360

Maximum Continuous Collector Current (A)

30

Maximum Gate Emitter Leakage Current (uA)

0.1

Standard Package Name

TO-220

Maximum Gate Emitter Voltage (V)

±30

Maximum Power Dissipation (mW)

35

Minimum Operating Temperature (°C)

-40

Mounting

Through Hole

Package Height

16.13(Max)

Package Length

10.75(Max)

Package Shape

RECTANGULAR

Package Width

4.83(Max)

PCB changed

3

PPAP

No

Number of Terminals

3

Surface Mount

NO

Number of Elements

1

Tab

Tab

Additional Feature

HIGH RELIABILITY

Subcategory

Insulated Gate BIP Transistors

Terminal Position

SINGLE

Terminal Form

THROUGH-HOLE

Reach Compliance Code

unknown

Pin Count

3

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Configuration

Single

Case Connection

ISOLATED

Supplier Package

TO-220AB Full-Pak

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

Channel Type

N

Power Dissipation-Max (Abs)

35 W

Collector Current-Max (IC)

30 A

Collector-Emitter Voltage-Max

360 V

Gate-Emitter Voltage-Max

30 V

Part Status

Obsolete

Gate-Emitter Thr Voltage-Max

4.7 V

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