Infineon SIGC12T120EX1SA2

SKU: SIGC12T120EX1SA2-9

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Manufacturer Part :
SIGC12T120EX1SA2
Manufacturer :
Infineon
Package :
-
RoHS :
SIGC12T120EX1SA2 Datasheet :
SIGC12T120EX1SA2

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Description

Specification

Processor

Manufacturer

Infineon

Package Quantity

1

Automotive

No

ECCN (US)

EAR99

EU RoHS

Compliant

Maximum Collector-Emitter Voltage (V)

1200

Maximum Gate Emitter Leakage Current (uA)

0.12

Maximum Gate Emitter Voltage (V)

±20

Maximum Operating Temperature (°C)

175

Minimum Operating Temperature (°C)

-40

Package Height

0.14

Package Length

3.54

Package Width

3.5

PCB changed

3

PPAP

No

Supplier Package

Die

Typical Collector Emitter Saturation Voltage (V)

1.7

Packaging

Wafer

Part Status

Active

Max Operating Temperature

150 °C

Min Operating Temperature

-40 °C

Pin Count

3

Configuration

Single

Drain to Source Voltage (Vdss)

1.2 kV

Collector Emitter Voltage (VCEO)

1.2 kV

Max Dual Supply Voltage

1.2 kV

Channel Type

N

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