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Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Current - Continuous Drain (Id) @ 25℃ |
24A Tc |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Number of Elements |
1 |
Power Dissipation (Max) |
144W Tc |
Turn Off Delay Time |
25.4 ns |
JESD-30 Code |
R-PSSO-G2 |
Factory Lead Time |
36 Weeks |
Published |
2011 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Discontinued |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Fall Time (Typ) |
14.8 ns |
Continuous Drain Current (ID) |
24A |
Case Connection |
DRAIN |
Turn On Delay Time |
13.4 ns |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
78m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs |
38nC @ 10V |
Rise Time |
22.4ns |
Vgs (Max) |
±20V |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
144W |
Threshold Voltage |
3V |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Drain-source On Resistance-Max |
0.078Ohm |
Drain to Source Breakdown Voltage |
200V |
Height |
2.39mm |
Length |
6.73mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Active |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-261-4, TO-261AA |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2012 |
Series |
SIPMOS® |
JESD-609 Code |
e3 |
Element Configuration |
Single |
Factory Lead Time |
10 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Pin Count |
4 |
Number of Elements |
1 |
Voltage |
600V |
Power Dissipation-Max |
1.8W Ta |
Pbfree Code |
yes |
Current |
12A |
Fall Time (Typ) |
182 ns |
Turn-Off Delay Time |
28 ns |
Turn On Delay Time |
5.4 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
45 Ω @ 120mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 94μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
146pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
120mA Ta |
Gate Charge (Qg) (Max) @ Vgs |
4.9nC @ 5V |
Rise Time |
5.6ns |
Drive Voltage (Max Rds On,Min Rds On) |
0V 10V |
Vgs (Max) |
±20V |
Power Dissipation |
1.8W |
Case Connection |
DRAIN |
Continuous Drain Current (ID) |
120mA |
Gate to Source Voltage (Vgs) |
20V |
Max Dual Supply Voltage |
600V |
Drain to Source Breakdown Voltage |
600V |
Recovery Time |
130 ns |
FET Feature |
Depletion Mode |
Height |
1.5mm |
Length |
6.5mm |
Width |
3.5mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Number of Terminations |
3 |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
1998 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Resistance |
200mOhm |
Voltage - Rated DC |
-100V |
Peak Reflow Temperature (Cel) |
250 |
Current Rating |
-14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Lead Pitch |
2.54mm |
Number of Elements |
1 |
Power Dissipation-Max |
79W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
79W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Turn On Delay Time |
15 ns |
Threshold Voltage |
-4V |
JEDEC-95 Code |
TO-220AB |
Rds On (Max) @ Id, Vgs |
200m Ω @ 8.4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
14A Tc |
Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
Rise Time |
58ns |
Drain to Source Voltage (Vdss) |
100V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
46 ns |
Turn-Off Delay Time |
45 ns |
Continuous Drain Current (ID) |
-14A |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
-100V |
Pulsed Drain Current-Max (IDM) |
56A |
Dual Supply Voltage |
-100V |
Avalanche Energy Rating (Eas) |
250 mJ |
Recovery Time |
190 ns |
Nominal Vgs |
-4 V |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Termination |
SMD/SMT |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
HEXFET® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Case Connection |
DRAIN |
Factory Lead Time |
12 Weeks |
ECCN Code |
EAR99 |
Resistance |
75mOhm |
Voltage - Rated DC |
55V |
Terminal Form |
GULL WING |
Current Rating |
17A |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
45W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Power Dissipation |
38W |
Number of Terminations |
2 |
Turn On Delay Time |
4.9 ns |
JEDEC-95 Code |
TO-252AA |
Gate to Source Voltage (Vgs) |
20V |
Rds On (Max) @ Id, Vgs |
75m Ω @ 10A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
370pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
17A Tc |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Rise Time |
34ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Turn-Off Delay Time |
19 ns |
Continuous Drain Current (ID) |
17A |
Threshold Voltage |
4V |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Drain to Source Breakdown Voltage |
55V |
Pulsed Drain Current-Max (IDM) |
68A |
Dual Supply Voltage |
55V |
Recovery Time |
83 ns |
Max Junction Temperature (Tj) |
175°C |
Nominal Vgs |
4 V |
Height |
2.52mm |
Length |
6.7056mm |
Width |
6.22mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Contains Lead, Lead Free |
In stock
Manufacturer |
Infineon Technologies |
---|---|
Resistance |
15MOhm |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2010 |
Series |
HEXFET® |
Part Status |
Active |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Factory Lead Time |
12 Weeks |
Max Operating Temperature |
175°C |
Min Operating Temperature |
-55°C |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
350W Tc |
Element Configuration |
Single |
Power Dissipation |
350W |
Turn On Delay Time |
18 ns |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
15mOhm @ 33A, 10V |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds |
4460pF @ 25V |
Drain to Source Breakdown Voltage |
150V |
Input Capacitance |
4.46nF |
Rise Time |
60ns |
Drain to Source Voltage (Vdss) |
150V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
35 ns |
Turn-Off Delay Time |
25 ns |
Continuous Drain Current (ID) |
85A |
Threshold Voltage |
5V |
Gate to Source Voltage (Vgs) |
30V |
Current - Continuous Drain (Id) @ 25°C |
85A Tc |
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
Max Junction Temperature (Tj) |
175°C |
Drain to Source Resistance |
12mOhm |
Rds On Max |
15 mΩ |
Nominal Vgs |
5 V |
Height |
5.084mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Cut Tape (CT) |
Published |
2007 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Element Configuration |
Single |
Part Status |
Active |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Resistance |
7.5Ohm |
Voltage - Rated DC |
60V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
115mA |
Pin Count |
3 |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
225mW Ta |
Contact Plating |
Tin |
Factory Lead Time |
10 Weeks |
Continuous Drain Current (ID) |
115mA |
Power Dissipation |
225mW |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
7.5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
115mA Tc |
Drive Voltage (Max Rds On,Min Rds On) |
5V 10V |
Vgs (Max) |
±20V |
Turn-Off Delay Time |
40 ns |
Threshold Voltage |
1V |
Gate to Source Voltage (Vgs) |
20V |
Operating Mode |
ENHANCEMENT MODE |
Drain to Source Breakdown Voltage |
60V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
2.5 V |
Feedback Cap-Max (Crss) |
5 pF |
Height |
1.11mm |
Length |
3.04mm |
Width |
1.4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Power Dissipation |
235W |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
1.31247g |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Series |
UniFET™ |
Pbfree Code |
yes |
Part Status |
Active |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Resistance |
94MOhm |
Terminal Form |
GULL WING |
JESD-30 Code |
R-PSSO-G2 |
Number of Elements |
1 |
Power Dissipation-Max |
235W Tc |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
Contact Plating |
Tin |
Factory Lead Time |
7 Weeks |
Turn-Off Delay Time |
75 ns |
Continuous Drain Current (ID) |
33A |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
94m Ω @ 16.5A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2135pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
33A Tc |
Gate Charge (Qg) (Max) @ Vgs |
48nC @ 10V |
Rise Time |
230ns |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
Fall Time (Typ) |
120 ns |
Turn On Delay Time |
35 ns |
Case Connection |
DRAIN |
Threshold Voltage |
3V |
Gate to Source Voltage (Vgs) |
30V |
Drain to Source Breakdown Voltage |
250V |
Nominal Vgs |
3 V |
Height |
4.83mm |
Length |
10.67mm |
Width |
11.33mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
FET Type |
N-Channel |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Contact Plating |
Tin |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
Number of Pins |
6 |
Weight |
36mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2006 |
Series |
PowerTrench® |
Power Dissipation |
1.6W |
Factory Lead Time |
13 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
6 |
ECCN Code |
EAR99 |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
1.6W Ta |
Element Configuration |
Single |
Operating Mode |
ENHANCEMENT MODE |
JESD-609 Code |
e3 |
Turn On Delay Time |
7 ns |
Continuous Drain Current (ID) |
4.9mA |
Threshold Voltage |
-2.2V |
Rds On (Max) @ Id, Vgs |
42m Ω @ 4.9A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
1005pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
4.9A Ta |
Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
Rise Time |
4ns |
Drain to Source Voltage (Vdss) |
30V |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
4 ns |
Turn-Off Delay Time |
33 ns |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Gate to Source Voltage (Vgs) |
25V |
Drain Current-Max (Abs) (ID) |
4.9A |
Drain-source On Resistance-Max |
0.042Ohm |
Drain to Source Breakdown Voltage |
-30V |
Max Junction Temperature (Tj) |
150°C |
Height |
1.1mm |
Length |
3mm |
Width |
1.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Supplier Device Package |
I2PAK (TO-262) |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2002 |
Series |
PowerTrench® |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power Dissipation-Max |
310W Tc |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
16mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
5870pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
8A Ta 79A Tc |
Gate Charge (Qg) (Max) @ Vgs |
107nC @ 10V |
Drain to Source Voltage (Vdss) |
150V |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Element Configuration |
Single |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2003 |
Series |
PowerTrench® |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Pbfree Code |
yes |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
19MOhm |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
100V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
7.5A |
Number of Elements |
1 |
Power Dissipation-Max |
2.5W Ta |
Mount |
Surface Mount |
Factory Lead Time |
12 Weeks |
Turn-Off Delay Time |
37 ns |
Continuous Drain Current (ID) |
7.5A |
FET Type |
N-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
23m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
2015pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
7.5A Ta |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Rise Time |
20ns |
Drive Voltage (Max Rds On,Min Rds On) |
6V 10V |
Vgs (Max) |
±20V |
Fall Time (Typ) |
27 ns |
Power Dissipation |
2.5W |
Operating Mode |
ENHANCEMENT MODE |
Threshold Voltage |
4V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
100V |
Dual Supply Voltage |
100V |
Nominal Vgs |
4 V |
Height |
1.5mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
14 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154, 3.90mm Width) |
Number of Pins |
8 |
Weight |
130mg |
Transistor Element Material |
SILICON |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2005 |
Series |
PowerTrench® |
JESD-609 Code |
e4 |
Element Configuration |
Single |
Pbfree Code |
yes |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
8 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Resistance |
4.6MOhm |
Voltage - Rated DC |
-30V |
Terminal Position |
DUAL |
Terminal Form |
GULL WING |
Current Rating |
-20A |
Number of Elements |
1 |
Number of Channels |
1 |
Power Dissipation-Max |
2.5W Ta |
Contact Plating |
Tin |
Factory Lead Time |
18 Weeks |
Turn-Off Delay Time |
660 ns |
Power Dissipation |
2.5W |
FET Type |
P-Channel |
Transistor Application |
SWITCHING |
Rds On (Max) @ Id, Vgs |
4.6m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
7540pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
20A Ta |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Rise Time |
9ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
Vgs (Max) |
±25V |
Fall Time (Typ) |
380 ns |
Continuous Drain Current (ID) |
-20A |
Threshold Voltage |
-1.8V |
Operating Mode |
ENHANCEMENT MODE |
Gate to Source Voltage (Vgs) |
25V |
Drain to Source Breakdown Voltage |
-30V |
Dual Supply Voltage |
30V |
Max Junction Temperature (Tj) |
150°C |
Nominal Vgs |
1.8 V |
Height |
1.75mm |
Length |
5mm |
Width |
4mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
20 ns |
Lead Free |
Lead Free |
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Contact Plating |
Tin |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Surface Mount |
YES |
Number of Pins |
3 |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Power Dissipation |
1.5W |
Factory Lead Time |
4 Weeks |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Pin Count |
3 |
Number of Channels |
1 |
Power Dissipation-Max |
900mW Ta |
Element Configuration |
Single |
Published |
2007 |
Turn On Delay Time |
5 ns |
Vgs (Max) |
±20V |
Fall Time (Typ) |
2 ns |
Vgs(th) (Max) @ Id |
2.5V @ 250μA |
Halogen Free |
Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds |
182pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
1.7A Ta |
Gate Charge (Qg) (Max) @ Vgs |
5.1nC @ 10V |
Rise Time |
7ns |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V 10V |
FET Type |
N-Channel |
Rds On (Max) @ Id, Vgs |
155m Ω @ 1A, 10V |
Turn-Off Delay Time |
13 ns |
Continuous Drain Current (ID) |
2.2A |
Threshold Voltage |
2.5V |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
60V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
In stock
Manufacturer |
Renesas Electronics America |
---|---|
Pin Count |
4 |
Package / Case |
TO-3P-3, SC-65-3 |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Active |
ECCN Code |
EAR99 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
FET Type |
N-Channel |
Power Dissipation-Max |
150W Ta |
Rds On (Max) @ Id, Vgs |
240m Ω @ 12.5A, 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C |
25A Ta |
Gate Charge (Qg) (Max) @ Vgs |
66nC @ 10V |
Drain to Source Voltage (Vdss) |
500V |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs (Max) |
±30V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
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