Infineon Technologies AUIRGP50B60PD1

SKU: AUIRGP50B60PD1-9

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Manufacturer Part :
AUIRGP50B60PD1
Manufacturer :
Infineon Technologies
Package :
TO-247-3
RoHS :
RoHS Compliant
AUIRGP50B60PD1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 33A, 3.3 Ω, 15V

Turn Off Delay Time

150 ns

Input Type

Standard

Factory Lead Time

14 Weeks

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Max Power Dissipation

390W

Rise Time-Max

15ns

Element Configuration

Single

Power Dissipation

390W

Operating Temperature

-55°C~150°C TJ

Turn On Delay Time

40 ns

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

30ns/130ns

Collector Emitter Voltage (VCEO)

2.85V

Max Collector Current

75A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-247AC

Turn On Time

39 ns

Vce(on) (Max) @ Vge, Ic

2.85V @ 15V, 50A

Turn Off Time-Nom (toff)

161 ns

IGBT Type

NPT

Gate Charge

205nC

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Switching Energy

255μJ (on), 375μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Fall Time-Max (tf)

15ns

Height

20.7mm

Length

15.87mm

Width

5.31mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

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