Infineon Technologies BSB012N03LX3 G

SKU: BSB012N03LX3 G-11

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Manufacturer Part :
BSB012N03LX3 G
Manufacturer :
Infineon Technologies
Package :
3-WDSON
RoHS :
RoHS Compliant
BSB012N03LX3 G Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Series

OptiMOS™

Package / Case

3-WDSON

Surface Mount

YES

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

39A Ta 180A Tc

Drive Voltage (Max Rds On, Min Rds On)

4.5V 10V

Power Dissipation (Max)

2.8W Ta 89W Tc

Operating Temperature

-40°C~150°C TJ

Packaging

Tape & Reel (TR)

Terminal Form

NO LEAD

Mounting Type

Surface Mount

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

MATTE TIN

HTS Code

8541.29.00.95

Terminal Position

BOTTOM

Published

2009

Peak Reflow Temperature (Cel)

260

Rds On (Max) @ Id, Vgs

1.2m Ω @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Pin Count

3

JESD-30 Code

R-MBCC-N3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

FET Type

N-Channel

Transistor Application

SWITCHING

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

40

Input Capacitance (Ciss) (Max) @ Vds

16900pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

169nC @ 10V

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Drain Current-Max (Abs) (ID)

39A

Drain-source On Resistance-Max

0.0012Ohm

Pulsed Drain Current-Max (IDM)

400A

DS Breakdown Voltage-Min

30V

Avalanche Energy Rating (Eas)

290 mJ

RoHS Status

RoHS Compliant

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