Infineon Technologies BSZ058N03LSGATMA1

SKU: BSZ058N03LSGATMA1-11

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Manufacturer Part :
BSZ058N03LSGATMA1
Manufacturer :
Infineon Technologies
Package :
8-PowerTDFN
RoHS :
ROHS3 Compliant
BSZ058N03LSGATMA1 Datasheet :

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Number of Pins

8

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2011

Series

OptiMOS™

JESD-609 Code

e3

Pbfree Code

no

Number of Elements

1

Part Status

Active

Number of Terminations

5

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Terminal Position

DUAL

Terminal Form

NO LEAD

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

8

JESD-30 Code

R-PDSO-N5

Qualification Status

Not Qualified

Mount

Surface Mount

Factory Lead Time

18 Weeks

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Power Dissipation-Max

2.1W Ta 45W Tc

Power Dissipation

2.1W

Case Connection

DRAIN

Turn On Delay Time

4.6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

5.8m Ω @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250μA

Halogen Free

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 15V

Current - Continuous Drain (Id) @ 25°C

15A Ta 40A Tc

Rise Time

3.6ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Vgs (Max)

±20V

Fall Time (Typ)

3.2 ns

Turn-Off Delay Time

19 ns

Continuous Drain Current (ID)

15A

Gate to Source Voltage (Vgs)

20V

Max Dual Supply Voltage

30V

Drain Current-Max (Abs) (ID)

40A

Avalanche Energy Rating (Eas)

55 mJ

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Lead Free

Contains Lead

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