Infineon Technologies IGB01N120H2ATMA1

SKU: IGB01N120H2ATMA1-9

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Manufacturer Part :
IGB01N120H2ATMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
ROHS3 Compliant
IGB01N120H2ATMA1 Datasheet :
IGB01N120H2ATMA1

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Description

Specification

Processor

Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Surface Mount

YES

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

800V, 1A, 241 Ω, 15V

Packaging

Tape & Reel (TR)

Published

2007

Operating Temperature

-40°C~150°C TJ

JESD-609 Code

e3

Pbfree Code

no

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

28W

Terminal Form

GULL WING

Mounting Type

Surface Mount

Contact Plating

Tin

Polarity/Channel Type

NPN

Collector Emitter Voltage (VCEO)

1.2kV

Qualification Status

Not Qualified

Element Configuration

Single

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

28W

Transistor Application

SWITCHING

Halogen Free

Halogen Free

Pin Count

4

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Max Collector Current

3.2A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 1A

Gate Charge

8.6nC

Current - Collector Pulsed (Icm)

3.5A

Td (on/off) @ 25°C

13ns/370ns

Switching Energy

140μJ

JESD-30 Code

R-PSSO-G2

RoHS Status

ROHS3 Compliant

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