Infineon Technologies IGD10N65T6ARMA1

SKU: IGD10N65T6ARMA1-9

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Manufacturer Part :
IGD10N65T6ARMA1
Manufacturer :
Infineon Technologies
Package :
RoHS :
IGD10N65T6ARMA1 Datasheet :
IGD10N65T6ARMA1

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Description

Specification

Processor

Manufacturer

Infineon

Mfr

Infineon Technologies

Supplier Device Package

PG-TO252-3

Base Product Number

IGD10N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

23 A

Factory Pack QuantityFactory Pack Quantity

3000

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Test Conditions

400V, 8.5A, 47Ohm, 15V

Mounting Type

Surface Mount

Minimum Operating Temperature

– 40 C

Mounting Styles

SMD/SMT

MSL

MSL 1 – Unlimited

Package

Digi-Reel?

Part # Aliases

IGD10N65T6 SP004275478

Pd - Power Dissipation

75 W

Product Status

Not For New Designs

Maximum Operating Temperature

+ 175 C

Tradename

TRENCHSTOP

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

TrenchStop?

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

75W

Input Type

Standard

Power - Max

75 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

MouseReel

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 8.5A

Continuous Collector Current

23A

IGBT Type

Trench Field Stop

Gate Charge

27 nC

Current - Collector Pulsed (Icm)

42.5 A

Td (on/off) @ 25°C

30ns/106ns

Switching Energy

200μJ (on), 70μJ (off)

Product Category

IGBT Transistors

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